0030T Search Results

Contextual Info: KEMET Part Number: T252D477M010MS7200 M39003/06-0030TR, CSR33C477MM7200 Capacitor, tantalum, 470 uF, +/-20% Tol, 10V@85C General Information Manufacturer: KEMET Electrical Specifications Value: 10V Voltage DC @ 125C: 6.3V Tolerance: Application: Body Type:

5962-9752701Q3A

Abstract: qml-38535
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 REV STATUS OF SHEETS PMIC N/A REV SHEET 1 2 3 5 4 6 7 8 9 10 11 12 13 PREPARED BY DEFENSE SUPPLY CENTER COLUMBUS Joseph A. Kerby STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE

LC7355

Abstract: LC7356 7356 DIP18 25vfd35v
Contextual Info: SANYO SEMICONDUCTOR CORP 1EE D I 7^^70713 T 7 5 ' 0 7 - □0030t,S 0 7 CMOS LSI 3007A Pulse Dialer w ith Redial Function 1586A General Description The LC7355 18-pin package /LC7356(20-pin package) are redial function-provided pulse dialer C-MOS LSIs for use in pushbutton telephones. (Dial pulse output

Contextual Info: < $ 2 iL G E Product Specification Z 8038/Z 8538 T O FIFO Input/ Output Interlace Unit The Z8538 is no longer offered. Features • 128-byte FIFO buffer provides asynchronous bidirectional CPU/CPU or CPU/peripheral interface, expandable to any width in byte

7SL05

Abstract: IS0130 Burr-Brown sigma-delta 20 CSA22 VDE0884
Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R -B R O W N E IS 0130 1 High IMR, Low Cost ISOLATION AMPLIFIER FEATURES APPLICATIONS • HIGH ISOLATION-M ODE REJECTION: 10kV/jis min • M OTOR A N D S C R CONTROL • LA R G E SIG N AL BANDWIDTH: 85kHz (typ)

3LD2

Abstract: siemens IEC 60947 VDE 0660 3LD20 siemens 110 kW motors 3ld22 main switch 3LD siemens 3LD25 siemens 3ld 25 3LD20 siemens 3LD28
Contextual Info: LV1_17.book Seite 2 Freitag, 26. Januar 2007 11:33 11 Siemens AG 2007 SENTRON Switching and Protection Devices — Switch Disconnectors Introduction • Overview Type 3LD20 3LD21 3LD22 3LD25 3LD27 3LD28 3LD main and EMERGENCY-STOP switches from 16 A to 125 A

Contextual Info: KM416V1004BT CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a lamily of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

SIEMENS 3TF47 contactor

Abstract: 3UA50 siemens modules GR 60 48 V 120 A 3TF52 3UA62 SIEMENS 3TF46 contactor siemens mpcb 3TK2827 3tf54 3tf35
Contextual Info: Unmatched safety that meets all your needs LV Switchgear Price List Maximum Retail Price w.e.f. 1st November, 2010 Answers for industry. s Everything Easy SIRIUS SIEMENS – INDUSTRY SECTOR TRAINING CENTER SITRAIN INDIA, KALWA. List of courses at SITRAIN-Kalwa & Authorized Training Centers ATC

Contextual Info: SPRAGUE WET AND FOIL TANTALUM CAPACITORS TY P E 138D Herm etically-Sealed, Gelled-Electrolyte Sintered Anode TANTALEx@Capacitors w ith True G lass-to-Tantalum Seal J MPROVED RELIABILITY through the use of a glass-to-tantalum true hermetic anode seal is the prime feature of the Type 138D gelled-electrolyte sintered anode Tantalex capacitor. This con­

38881M

Contextual Info: MITSUBISHI MICROCOMPUTERS 3 8 8 8 Group SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION FEATURES The 3888 group is the 8-bit microcomputer based on the 740 family core technology. The 3888 group is a protocol controller for data communica­ tion between processors in the multi-processor system and

XD FST

Contextual Info: MITSUBISHI MICROCOMPUTERS 3880 Group SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION FEATURES The 3880 group is the 8-bit microcomputer based on the • Basic machine-language instructions.71 740 family core technology. The 3880 group is designed for office automation equip­

k455

Abstract: BUK455 BUK455-200A BUK455-200B T0220AB
Contextual Info: bTE D N AMER PHI LIP S/ DI SC R ET E • 0D30b50 Ô3D H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

SGS80DA020D

Abstract: SGS80DA020 C180M 0809 al 9120 mosfet SGS80D
Contextual Info: 30E D • 7^2^237 003GbflG 7 HI r^Z SGS-THOMSON ^ 7 # ¡ILi^BMDOt B T T ' | ’3 3 SGS80DA020D s -t h o m s o n NPN DARLINGTON POWER MODULE - ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS ■ LOW Rth JUNCTION TO CASE . FREEWHELING DIODE ■ ADAPTED FOR HIGH POWER SWITCHING

bu826

Abstract: BU626 BU826A SOT93 npn darlington transistor 131
Contextual Info: 45E D PHILIPS INTERNATIONAL E3 711002b □ D3CH2C1 T Ö P H I N '‘ BU826 BU826A SILICON DARLINGTON POWER TRANSISTOR M onolithic high voltage npn Darlington circuit w ith integrated speed-up diode in a plastic SO T93 envelope, intended for fast switching application.

Contextual Info: m BOE D " T 7^ l'\S 7^2^237 QG3D'^S T • BFX89 BFY90 SGS-THOMSON tLiOTOOiOOS S-THOMSON WIDE BAND VHF/UHF AMPLIFIER a SILICON PLANAR EPITAXIAL TRANSISTORS ■ TO-72 METAL CASE ■ VERY LOW NOISE APPLICATIONS : ■ TELECOMMUNICATIONS ■ WIDE BAND UHF AMPLIFIER

68000 thomson

Abstract: ts68000A 8202102 TS68000M TS68000 thomson PGA68
Contextual Info: O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX TS 68000 HMOS HIGH DENSITY N-CHANNEL SILICON-GATE DEPLETION LOAD 16/32 BIT MICROPROCESSOR DESCRIPTION The TS 68000 is the first implementation of the 68000 16/32microprocessor architecture. The TS68000 has a 16-bit data bus and 24-bit address bus. It is completely cod