NP10 Search Results
NP10 Datasheets (37)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| NP10 | Agere Systems | Network Processor | Original | 79.78KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP100N04PUK-E1-AY | Renesas Electronics | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 100A TO-263 | Original | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP100N055PUK-E1-AY | Renesas Electronics | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 100A TO-263 | Original | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP100P04PDG | NEC | MOS FIELD EFFECT TRANSISTOR | Original | 184.47KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP100P04PDG-E1-AY | NEC | MOS FIELD EFFECT TRANSISTOR | Original | 184.46KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP100P04PDG-E1-AY | Renesas Electronics | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH -40V MP-25ZP/TO-263 | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP100P04PDG-E2-AY | NEC | MOS FIELD EFFECT TRANSISTOR | Original | 184.46KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP100P04PLG | NEC | MOS FIELD EFFECT TRANSISTOR | Original | 184.61KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP100P04PLG-E1-AY | NEC | MOS FIELD EFFECT TRANSISTOR | Original | 184.62KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP100P04PLG-E1-AY | Renesas Electronics | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH -40V MP-25ZP/TO-263 | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP100P04PLG-E2-AY | NEC | MOS FIELD EFFECT TRANSISTOR | Original | 184.62KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP100P06PDG | NEC | MOS FIELD EFFECT TRANSISTOR | Original | 184.6KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP100P06PDG-E1-AY | NEC | MOS FIELD EFFECT TRANSISTOR | Original | 184.6KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP100P06PDG-E1-AY | Renesas Electronics | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH -60V MP-25ZP/TO-263 | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP100P06PDG-E2-AY | NEC | MOS FIELD EFFECT TRANSISTOR | Original | 184.62KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP100P06PLG | NEC | MOS FIELD EFFECT TRANSISTOR | Original | 183.24KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP100P06PLG-E1-AY | NEC | MOS FIELD EFFECT TRANSISTOR | Original | 183.24KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP100P06PLG-E1-AY | Renesas Electronics | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH -60V MP-25ZP/TO-263 | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP100P06PLG-E2-AY | NEC | MOS FIELD EFFECT TRANSISTOR | Original | 183.24KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP109N04PUG | NEC | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | Original | 230.4KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NP10 Price and Stock
Samtec Inc TCSD-05-S-09.00-01-F-N-P10 |
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Samtec Inc TCSD-06-S-10.00-01-N-P10 |
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Samtec Inc TCSD-08-D-01.00-01-F-N-P10 |
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Samtec Inc TCSD-10-D-42.38-01-N-P10 |
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TCSD-10-D-42.38-01-N-P10 |
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Samtec Inc HCSD-05-D-04.00-01-N-P10Ribbon Cables / IDC Cables IDC Socket and Terminal Cable Assemblies 0.100 Pitch |
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HCSD-05-D-04.00-01-N-P10 |
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NP10 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
NP100P06PDG
Abstract: NP100P06PDG-E1-AY MP-25ZP NP100P06PDG-E2-AY
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Original |
np100p06pdgnp100p06pdg-e1-aynp100p06pdg-e2-ayo-263+1 | |
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Contextual Info: Preliminary Data Sheet NP100N04PUK R07DS0545EJ0100 Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance |
Original |
np100n04pukr07ds0545ej0100aec-q101np100n04puk-e1-ay+3 | |
"Content Addressable Memory"
Abstract: MPLS over optical packet switching OC192c NP10 TM10
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Original |
tm10s--pb01-137npcontent addressable memorympls over optical packet switching+3 | |
NP109N04PUK
Abstract: MP-25ZP
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Original |
np109n04pukr07ds0544ej0100aec-q101np109n04puk-e1-ay+4 | |
D1859
Abstract: NEC 109N04 MP-25ZP NP109N04PUG NP109N04PUG-E1-AY NP109N04PUG-E2-AY
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Original |
np109n04pugnp109n04pug-e1-aynp109n04pug-e2-ayo-263+3 | |
np100n04nujContextual Info: Preliminary Data Sheet NP100N04NUJ R07DS0364EJ0100 Rev.1.00 Jun 13, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance |
Original |
np100n04nujr07ds0364ej0100aec-q101s18-ay+2 | |
NP109N04PUKContextual Info: Preliminary Data Sheet NP109N04PUK R07DS0544EJ0100 Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP109N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance |
Original |
np109n04pukr07ds0544ej0100aec-q101np109n04puk-e1-ay+4 | |
IEC335
Abstract: BS6290 YCP1A12 YCP03A12 np yuasa YCP6A12 YCP2A12 YCP4A12 08708 Yuasa
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Original |
np10-60005ca004caiec335+9 | |
NP10N45DHB
Abstract: MP-25 NP10N45CHB NP10N45EHB
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OCR Scan |
np10n45chbnp10n45dhbnp10n45ehb1600pf+1 | |
NP101-D16C
Abstract: ddr2 ram slot pin voltage 12v power jack pcb NP101 RealTek RTL8111C RTL8111C
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Original |
945gse24-bit44-pindb-15+6 | |
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Contextual Info: Preliminary Data Sheet NP109N055PUK R07DS0590EJ0100 Rev.1.00 Dec 12, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance |
Original |
np109n055pukr07ds0590ej0100aec-q101np109n055puk-e1-ay+3 | |
MP-25ZP
Abstract: NP100N04PUK NP100
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Original |
np100n04pukr07ds0545ej0100aec-q101np100n04puk-e1-ay+4 | |
13000 transistor TO-220
Abstract: 100N04 np100n04mdh NP100N04PDH MP-25ZP NP100N04NDH S100BR
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np100n04mdhnp100n04ndhnp100n04pdhnp100n04mdh-s18-ay+7 | |
APP750NP
Abstract: APP750TM NP10 TM10 Traffic Manager 10G marking code ACL
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Original |
app750npapp750tmpb01-137np-2pb01-137np+4 | |
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NP100P04PLG-E1-AY
Abstract: MP-25ZP NP100P04PLG NP100P04PLG-E2-AY
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np100p04plgnp100p04plg-e1-aynp100p04plg-e2-ayo-263+1 | |
NP100P04PDG
Abstract: NP100P04PDG-E2-AY MP-25ZP NP100P04PDG-E1-AY PT1200
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Original |
np100p04pdgnp100p04pdg-e1-aynp100p04pdg-e2-ayo-263+2 | |
100N04
Abstract: NP100N04MUH NP100N04NUH NP100N04PUH MP-25ZP D1880 transistor marking code ak
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Original |
np100n04muhnp100n04nuhnp100n04puhnp100n04muh-s18-ay+7 | |
d1859
Abstract: 109N04 NEC 109N04 MP-25ZP NP109N04PUG NP109N04PUG-E1-AY NP109N04PUG-E2-AY
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Original |
np109n04pugnp109n04pug-e1-aynp109n04pug-e2-ayo-263+4 | |
NEC 109N04
Abstract: 109N04 NP109N04PUJ MP-25ZP NP109N04PUJ-E1B-AY NP109N04PUJ-E2B-AY
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np109n04pujnp109n04puj-e1b-aynp109n04puj-e2b-ayo-263+4 | |
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Contextual Info: Preliminary Data Sheet NP100N055PUK R07DS0589EJ0100 Rev.1.00 Dec 12, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance |
Original |
np100n055pukr07ds0589ej0100aec-q101np100n055puk-e1-ay+3 | |
transistor 7350Contextual Info: Preliminary Data Sheet NP100N055PUK R07DS0589EJ0100 Rev.1.00 Dec 12, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance |
Original |
np100n055pukr07ds0589ej0100aec-q101np100n055puk-e1-ay+4 | |
100N055
Abstract: NP100N055MDH NP100N055PDH 100n05 NP100N055NDH NP100N055PDH-E1-AY MP-25ZP NP100N055PDH-E1 NP100N055NDH-S18-AY D1880
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Original |
np100n055mdhnp100n055ndhnp100n055pdhnp100n055mdh-s18-ay+8 | |
NP109N055PUJ
Abstract: 109N055 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR MP-25ZP NP109N055PUJ-E1B-AY NP109N055PUJ-E2B-AY
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Original |
np109n055pujnp109n055puj-e1b-aynp109n055puj-e2b-ayo-263+4 | |
NP100P06PLG
Abstract: MP-25ZP NP100P06PLG-E1-AY NP100P06PLG-E2-AY
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Original |
np100p06plgnp100p06plg-e1-aynp100p06plg-e2-ayo-263+1 | |