0D13 Search Results

Contextual Info: MOE D • MOSSTlb 0D137Ö3 3 ■ A M I . . T - M 2 - 8 \ G ould AMI S ilic o n F ou n d ry A pproach Gould AMI is proud of the leadership position it occupies in today’s fast-paced world of process and technology. Our Silicon Foundry services and capabilities are truly world class. We pro­

D13N

Abstract: f44e DSP56156
Contextual Info: Freescale Semiconductor, Inc. Chip Errata DSP56156 Digital Signal Processor Mask: D13N Freescale Semiconductor, Inc. ERRATA Applies to Mask Errata Description 1. There are three speed grades of the 0D13N silicon of the DSP56156: 40 MHz, 50 MHz and 60 MHz. These three speed grades are tested as shown in the table below.

hs 111-0

Abstract: MSM6052 MSM6352 DIP40-P-600 OKI
Contextual Info: 5flE D OKI • b724EMG 0D13bflM flbb M O K I J semiconductor MSM6352 O K I SEMICONDUCTOR ”F-^9-¡9-y CROUP CMOS 4BIT SINGLE CHIP LOW POWER MICROCONTROLLER FOR TELEPHONE GENERAL DESCRIPTION The O KI M SM 6352 is a low-power, high-performance single-chip 4-bit microcontroller employing

745F1270BK00J

Abstract: BLU52
Contextual Info: N AMER PHILIPS/DISCRETE 860 ObE D 01126 bbS3T31 0D133fc,4 4 D T -3 3 -/3 ^ V.H.F./U.H.F. P U SH -P U LL BLU 52 P O W E R T R A N S IS T O R N-P-N silicon planar epitaxial push-pull transistor designed for use in military and professional wideband applications in the 30 to 400 M H z range.

m387

Contextual Info: HARRIS SEMICOND SECTOR 33 HARRIS ME D I 43Da571 0D135Q2 t | H 1 - 3 8 7 / 8 8 3 T-51-11 SPDT CMOS Analog Switch January 1 9 8 9 Features Description • This Circuit Is Procèsseci In Accordance to M il-S td 883 and Is Fully Conform ant Under the Provisions of

HOA1405-1

Abstract: HOA149-1 HOA1405-2 HOA708 HOA709-1 HOA708-1 HOA709-11 HOA708-11 HOA709 HOA149
Contextual Info: HO NE YWELL INC/ MICRO Assemblies 41E D • 4SS1A3D 0D13fifl4 2 ■ H O N L Reflective With Plastic Encapsulated Components Honeywell has a complete line of reflective assemblies built with plastic-encapsulated components. HLC1395 is a component that functions like an assembly. HOA149,

Contextual Info: GEC PLE S SE Y S E M I C O N D S 43E D B 37b6S22 0D13bb3 1 BlPLSB GEC PLESS EY I S E M I C O N D U C T Q R~S~| SP8799 200MHz -T- 10/11 TWO MODULUS DIVIDER The SP8799A is a low power programmable 4-10/11

SL3045C

Contextual Info: GEC PLESSEY SEMICONDS 43E D • 37böS22 0D134ÖD H M Pl-SB " T m - i S GEC PLESSEY ¡ S E M I C O N D U C T O R S SL3245 3GHz NPN TRANSISTOR ARRAY The SL3245 is a m onolithic array of five high frequency low current NPN transistors. The SL3245 consists of 3 isolated

d13n

Abstract: BRA 94 DSP56156 marking D13N
Contextual Info: Chip Errata DSP56156 Digital Signal Processor Mask: D13N ERRATA Applies to Mask Errata Description 1. There are three speed grades of the 0D13N silicon of the DSP56156: 40 MHz, 50 MHz and 60 MHz. These three speed grades are tested as shown in the table below.

K1201

Contextual Info: MMTbEDS 0D13E37 TÔT • H I T M 2SK1201 HI TACHI/ OPTOELECTRONICS blE D S IL IC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING ■ FEATURES • 1.G ate 2. D rain (Flange) 3. Source (Dimensions in mm) Low On-Resistance • High Speed Switching

Contextual Info: OLE D N AMER PHILIPS/DISCRETE D E V E L O P M E N T DATA' • LLS3T31 0D132T2 5 U ■ T h ii data sheet contains advance Information and specif Icatlons are subject to change without notice. BGY93A BGY93B BGY93C , y d v _ _ _ _ T''7H~Oc '- 0 K

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • KM48C512/L/SL 7^4142 0D133bS 4b2 « S M Ö K CMOS DRAM 5 1 2 K x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C512/L/SL is a CMOS high speed 524,288 b it x 8 Dynamic Random Access Memory. Its

BST95

Contextual Info: DEVELOPMENT DATA • bbS3T31 0D130fl0 1 ■ This data sheet contains advance information and rf “ specifications are subject to change without notice, BST95 - - - N AMER PHI LI PS /DIS CR ETE OLE D T -lG -lsr N-CHANNEL VERTICAL D-MOS TRANSISTOR

2SK622

Abstract: dl50a Hitachi Scans-001
Contextual Info: blE D MMIböDS 0D131Dh 325 iH i m 2SK622 S.0mu L ¿ IS SILICO N N-CHANNEL MOS F E T HIGH SPEED POWER SWITCHING • FEATURES • 9 • • • Low On-Resistance High Speed Switching Low Drive Current No Secondary Breakdown Suitable for Switching Regulator, DC-DC Converter

BF996

Abstract: marking BS marking BS mosfet
Contextual Info: - v . - - '_-—_ N AMER PHILIP S/ DIS CRETE übE D WÊ :_ ^53^31 l i _i _ 0D13D14 T BF996 A ' T -s i-a .s -' SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic microminiature envelope, with source and substrate

C04066

Contextual Info: ' G E SOLID STATE 01 » Ë J 3075001 0D1327& 7 | 38 75 08 1 G E S O L I D S T A T E 0 IE 13278 D T - 5Ï- /j CD4066B Types CMOS Quad Bilateral Switch For Transmission or Multiplexing of Analog or Digital Signals Features: High-Voltage Types 20-Volt Rating

2SK1665

Abstract: RD20A VM-50V diode sr45 Silicon N Channel MOS FET High Speed Power Switching 2sk16
Contextual Info: 44Tb2D5 0D134ÛE 7^5 « H i m 2SK1665- tlE T> HITACHI/ O P T O E L E C T R O N I C S SILICON N -CHANNEL MOS FET 5 .0 m u . T ii HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • 4 V Gate Drive Device

SS81CA

Abstract: SS83CA SS81EA SS85CA SS31EA SS84AC SS84BC SS81 ss81c 41e magnetic sensor
Contextual Info: HONEYWELL INC/ MICRO SS3/SS8 SS8 with epoxy SS3 MOUNTING DIMENSIONS 41E D 4551Ö3D 0D132b7 0 • H O N 1 T-ÎB-a X' ■ Digital position sensors FEATURES • Low operating gauss levels • Reverse power polarity protection • SS3 — .30" X .20" ceramic package

D78C10

Abstract: PD78C10 PD78C11 PD78C10CW 78C10 irf 4110 13412 capacitor MKL PD78C14G-36 PD78C11G-36
Contextual Info: N E C ELECTRONICS INC Tfi D Ë J fc>457S2S 0D133ñfl ¿/PD78C10/C11/C14 8-BIT, SIN G LE-CH IP CMOS M ICROCOM PUTERS WITH A /D CO N VER TER NEC NEC Electronics Inc. -— 6427525 N E C S ELECTRO N ICS Description The/7PD78C10, A/PD78C11, and/nPD78C14 single-chip

Contextual Info: HE D I 17313tS 0D13bS7 7 I - T -O PA27 O PA37 RSI M IL IT A R Y & D IE V E R S IO N S A V A IL A B L E FEATURES APPLICATIONS • PRECISION INSTRU M ENTATION • LOW O F F S E T : 25/iV max

F MARKING 6PIN

Abstract: k937
Contextual Info: S A ftm 5/6-Pin CPs FC Series The Sanyo 5/6-pin chip packs are small-sized packages that facilitate higher-density mounting. We have various Packings that meet automatic mounting requirements. ale FETs for LF Amp General-purpose Amp, Differential Amp Applications

MH88617AV-PI

Contextual Info: MH88617 <§> MITEL Programmable SLIC with Advance Information Ringing Amplification ISSUE 2 Features • • Fully programmable line impedance,network balance impedance and gains. Programmable loop current with long loop capability 2-4 Wire conversion. Power down and wake up.

LC864012B

Abstract: LC864024A LC86000 LC864012 64Kx8 RAM 64Kx8 CMOS RAM DIP52S 16kx8
Contextual Info: CMOS 8-Bit Single-Chip Microcomputers LC864000 Series Overview The LC864000 Series are high-speed, advanced-function CMOS 8-bit single-chip m icrocontrollers with an on-chip caption display function. When combined with a data slice front-end 1C LA7945 , the previous products — the

GG13

Abstract: GG134
Contextual Info: SSI 32R2103R/2104R ¿iliamjusim' 8/10 Channel Thin Film Read/Write Devices A TDK Group/Company Advance Information December 1995 DESCRIPTION FEATURES The SSI 32R2103R/2104R are BiCMOS monolithic integrated circuits designed for use with two-terminal recording heads. They provide a low noise read