DD11D01
Abstract: GN6010A
Contextual Info: HITACHI / OPTOELECTRONICS SIE D Wt 44Tb2D5 DOllGD'ì 37T « H I T 4 T -3 9 -// GN6010A Silicon N Channel IGBT HITACHI Application Mar. 1992 TO -220A B High speed power switching Features • High speed switching tf = 150 ns typ, 350 ns max • Low on saturation voltage
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dd11d01gn6010ao-220abhitmt-31-ll+1o-22qab
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2SK384
Abstract: 2SK384L 2SK384S Hitachi Scans-001 2SK38
Contextual Info: 44Tb2D5 0013DM3 311 B H i m blE D 2SK384L,2SK384S HITACHI/ OPTOELECTRONICS SILICON N -C H A N N E L M O S FET r n 11 Type <D Type H IG H SPEED POW ER S W IT C H IN G . H IG H FR E Q U E N C Y POWER A M PLIFIER Q • FEATURES • S m a ll Package. • High Sp ee d S w itch in g .
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44tb2d50013dm32sk384l2sk384s+32sk384hitachi scans-0012sk38
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DIODE T25 4 Jo
Abstract: DIODE T25 4 do 2SK384L-2SK384S 2SK384 DIODE T25 4
Contextual Info: blE D 44Tb2D5 0013DM3 311 IHim 2SK384L,2SK384S HITACHI/ OPTOELECTRONICS S ILIC O N N -C H A N N E L M O S FET r n 11 ÏM H IG H S P E E D P O W E R S W IT C H IN G . H IG H F R E Q U E N C Y P O W E R A M P L IF IE R H Type <DType • FEATUR ES • Sm all Package.
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44tbed50013dm32sk384l-2sk384sdiode t25 4 jo+3diode t25 4 do2sk384diode t25 4
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2SK1665
Abstract: RD20A VM-50V diode sr45 Silicon N Channel MOS FET High Speed Power Switching 2sk16
Contextual Info: 44Tb2D5 0D134ÛE 7^5 « H i m 2SK1665- tlE T> HITACHI/ O P T O E L E C T R O N I C S SILICON N -CHANNEL MOS FET 5 .0 m u . T ii HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • 4 V Gate Drive Device
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44tb2d50d13444clbs0s2sk1665+5rd20avm-50vdiode sr45silicon n channel mos fet high speed power switching2sk16
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LM060L
Abstract: LM060 hitachi 16 X 2 lcd
Contextual Info: HITACHI / OPTOELECTRONICS HITACHI LIE D • ■ MM'ibSOS DD1244b flt.7 ■ HITM . . LM060L ■ 24 character x 2 lines ■ Controller LSI HD44780 is built-in (See page 115). ■ +5V single power supply INTERNAL PIN CONNECTION MECHANICAL DATA (Nominal dimensions)
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dd1244blm060lhd44780rf-200kq+344tb2d5lm060hitachi 16 x 2 lcd
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2SJ110
Abstract: 2sj118 t1511
Contextual Info: bl E D • MMTbSGS 0D1ST17 570 ■ H I T M 2 S J118 , 2 S J110 H I T A C H I / OPTOELECTRONICS *3.!±02 SILICON P-CHANNEL MOS FET - HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SK413, 2SK414 ■ FEATURES • Low On-Resistance.
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0d1st172sk4132sk41444tb5ds+42sj1182sj1192sj110t1511
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HE8815VG
Abstract: HE8807SG HL8311E HL8311G HL8312E Hitachi Scans-001 P015M
Contextual Info: HITACHI/COPTOELECTRONICS 54E D • MM^bSOS 001E0b3 EIE H H I T M H L8 3 1 1 E /G G a A IA s L D Description The HL8311E/G are 0.8 Jim band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment.
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hl8311e/ghe8815vghe8813vgtjspo100+10he8811he8812sghe8404sghe7601sghe8807sghl8311ehl8311ghl8312ehitachi scans-001p015m
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TRM5467
Contextual Info: TRM5467 Preliminary OC-3 Transmitter Description The TRM5467 is a lightwave transmitter for OC-3. Features • Fabry-Perot laser diode • High optical output power: +ldB m min. • Operation at 155.52 Mb/s (Scrambled NRZ) at 1.3 (im wavelength • Uncooled laser with automatic optical power con
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2SK399
Abstract: 2SJ113 44TB2 diode lo2a GG13 J-10 Hitachi Scans-001
Contextual Info: MMTbEGS GOlBGHfc, Q5G • H I T M 2SK399 HITACHI/ OPTOELECTRONICS b lE ]) SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ113 I N ■ FEATURES • Low On-Resistance. • High Speed Switching.
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2sj1132sk39944tb2diode lo2a+3gg13j-10hitachi scans-001
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11w cfl circuit
Abstract: HE8807SG HL1521A HL1521AC HL1521FG HL8312E LTH 1550 01 Hitachi Scans-001 44BA
Contextual Info: H I T A C H I / O P tOELECTRONICS 5 ME D • 44 Tbi2 D 5 G1 2 1 3 5 23 ^ ■ HITM InGaAsP LD H L 1 5 2 1 A /A C /F G 'T 'H t-c Description The HL1521A/AC/FG are 1.55 (im band laser diodes. Features • • Absolute Maximum Ratings (Tc = 25°C) Long wavelength output: Xp = 1530 - 1570 nm
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0g12135hl1521a/ac/fghl1521fghl1521+10he8815vghe8813vg11w cfl circuithe8807sghl1521ahl1521achl8312elth 1550 01hitachi scans-00144ba
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hitachi he1301
Abstract: HL7838G HL8312E laser GaAIAs de 5 mw 760 800 HE8807SG HE8813VG HE8815VG HL7838 Hitachi Scans-001 HE8403
Contextual Info: HITACHI/ OPTOELECTRONICS S^E D • MM'JbSGS D0120142 S^fl « H I T 4 HL7838G GaAlAs LD Description The HL7838G is a 0.78 pm band GaAlAs laser diode with a double heterojunction structure and is appro priate as the light source for various optical application devices, including laser beam printers and laser
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hl7838gd0120l42he8815vghe8813vg+11tjspo100he8811he8812sghe8404sghitachi he1301hl8312elaser gaaias de 5 mw 760 800he8807sghl7838hitachi scans-001he8403
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Thermistor bth 471
Abstract: d 1548 10G 1550 optical laser in butterfly HL1541DL HL1541A HL1541BF HL1541DM HL1541FG 10 gb laser diode AP-93
Contextual Info: HITACHI/ OPTOELECTRONICS S4E D • 4 4 ^ 2 0 3 D012140 HL1541A/AC/FG/BF/DL/DM bTh M H IT H InGaAsP LD Description The HL1541 A/AC/FG/BF/DL/DM are 1.55 |im band laser diodes. A b s o lu te M a x im u m R a tin g s (T ç ; = 2 5 ° C ) F e a tu re s • The HL1541A/AC are packaged in chip carrier
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d01s14shl1541a/ac/fg/bf/dl/dmd012140hl1541+13hl1541a/achl1541fghl1541bfhl1541dlhe8815vghe8813vgthermistor bth 471d 154810g 1550 optical laser in butterflyhl1541ahl1541dm10 gb laser diodeap-93
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hitachi sr 302
Abstract: HL1561BF te 1819 HL1561A HL1561AC 10 gb laser diode DD121S3 Hitachi Scans-001
Contextual Info: 54 E J> HITACHI/ OPTOELECTRONICS • HHTbSDS DD121S3 254 « H I T 4 H L 1 5 6 1 A /A C /B F InGaAsP LD Description The HL1561 A/AC/BF are 1.55 (am band InGaAsP X/4 phase-shifted distributed-feedback (DFB) laser diodes with a buried heterostructure. Fiber Specifications (HL1561BF only)
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hl1561a/ac/bfdd121s3hl1561bfhl1561+9561a/ac/bfhe8815vghe8813vghitachi sr 302te 1819hl1561ahl1561ac10 gb laser diodehitachi scans-001
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T9040
Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8318E HL8318G Hitachi Scans-001
Contextual Info: HITACHI/ OPTOELECTRONICS SHE D • 44ibaGS 001207^ bñT « H I T 4 HL8318E/G GaAIAs LD (-os Description The HL8318E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single positive supply voltage. They are
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hl8318e/g441beg5he8815vghe8813vg+10tjspo100he8811he8812sghe8404sgt9040he8807sghl8312ehl8318ehl8318ghitachi scans-001
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