GG134 Search Results

Contextual Info: GEC PLESSEY SEMICONDS 43E D B 37hf l SEE GG1340Ö 7 mPLSB GEC PLESSEY •SEMI CO N D U C T O R S] SL3521 75dB RANGE LOGARITHMIC AMPLIFIER Supersedes May 1990 Edition The SL3521 is a successive detection log a rith m ic am plifier, capable of operating from 100MHz to 650MHz. It

GG13

Abstract: GG134
Contextual Info: SSI 32R2103R/2104R ¿iliamjusim' 8/10 Channel Thin Film Read/Write Devices A TDK Group/Company Advance Information December 1995 DESCRIPTION FEATURES The SSI 32R2103R/2104R are BiCMOS monolithic integrated circuits designed for use with two-terminal recording heads. They provide a low noise read

Contextual Info: 5QE D 44^503 G01341Q 5 HITACHI/ L0GIC/ARRAYS/MÉÎ1 0 H IT A C H I S e p t e m b e r , 1985 CMOS GATE ARRAYS i HD61 SERIES DESIGNER'S MANUAL AND PRODUCT SPECIFICATION HITACHI/ LOGIC/ARR'A YS/MEM SQE D • 4 4TLS03 0G13411 4 T -42-11-09 CMOS GATE ARRAYS HD61 SERIES

Contextual Info: Panasonic CCD Area Image Sensor MW3746CKH 11 mm 2/3 inch 768H CCD Area Image Sensor •Overview ■Pin Assignments The M W 3746CKH is a 11mm (2/3 inch) Interline Transfer CCD (IT-CCD) solid state image sensor device. This device uses photodiodes in the optoelectric conversion

sk 3003 s

Abstract: 54ABT543 qml38535 qml-38535 950822
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A d d device type 02. A d d gro u n d bounce criteria a n d test limits. Changes for device type 01. Editorial changes t h r o u g h o u t . 94-08-19 M o n i c a L. Poelking A d d ven d o r CAGE 27014. Make change to the

Contextual Info: mM ITEL MH88632B Central Office Interface Circuit Preliminary Information Features ISSUE 2 • S up po rts Loop S tart and G round S tart protocols • 2-4 W ire conversion • Program m able Input Impedance, Network Balance Impedance and gains Ordering Inform ation

Contextual Info: M H 8 8 6 3 4 -2 U U MITEL Central Office Interface Circuit Preliminary Information ISSUE 4 Features • Loop Start Trunk Interface • 600Q Input Im pedance • 2-4 W ire Conversion • Line state D etection O utputs: January 1997 O rdering Inform ation M H 88634-2

TMS70C02

Abstract: tms7002
Contextual Info: m u r LTCl 522 m TECHNOLOGY 4-Channel 3V M icropower Sampling 12-Bit Serial I/O A/D Converter June 1995 F6O TUIK S D € S C R IP T IO n • 12-Bit Resolution ■ Auto Shutdown to 1nA ■ Guaranteed ±3/4LSB Max DNL The LTC 1522 is a 4-channel, 3V micropower, 12-bit

MAX620cpn

Contextual Info: 19-4325, Rev 2; 10/94 y v i y j x i y u i Q uad, H ig h -S id e M O S F E T D riv e rs The MAX620/MAX621 are microprocessor compatible and feature undervoltage lockout capability This lockout feature inhibits the FET driver outputs until the high-side voltage reaches the proper level, as indicated by a

78q8392

Contextual Info: SSI 78Q8392L Low Power Ethernet Coaxial Transceiver SaconSvstans' A TDK Group/Company January 1996 DESCRIPTION FEATURES The SSI 78Q8392L Ethernet Transceiver is a low power BiCMOS coax line transmitter/receiver. The device includes analog transmit and receive buffers, a

Contextual Info: M 24LC164 i c r o c h i p 16K 2.5V Cascadable CMOS Serial EEPROM PACKAGETYPE FEATURES • Single supply with operation down to 2.5V DIP • Low power CMOS technology - 1 mA active current typical A0 C 1 8 D Vcc A1C 2 24LC164 7 I ] WP • Two wire serial interface bus, 1% compatible

Q01327

Abstract: 8051 midi wireless keyboard 8051
Contextual Info: GENERAL DESCRIPTION The FDC37C957FR incorporates an 8051 based keyboard controller; a Flash Interface; four PS/2 ports; real-time clock; SMC's true CMOS 765B FDC w ith advanced digital data separator and 16 byte data FIFO; tw o 16C550A compatible UARTs, the second UART

Contextual Info: SAMSUNG ELECTRONICS INC bME D KM416C256/L/SL • 7^4142 DD1343Q Q24 I SHGK CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C256/USL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its

Contextual Info: i \j h ì v . I i/£ ty a u CY7C470 CY7C472 CY7C474 Revision: August 15f 1994 r # C Y PR ESS 8K x 9 FIFO, 16K x 9 FIFO, 32K x 9 FIFO with Programmable Flags Features • 8K x 9 ,16K x 9, and 32K x 9 FIFO • • • • • • • • • • • buffer memory

Contextual Info: GEC PLESSEY SEMICONDS M3E D 37bflS25 0Q13Mbb T M P L S S GEC PLESSEY 'T H V 'L S IS EMICO NDUCTORS I SL360G & SL362C HIGH PERFORMANCE NPN DUAL TRANSISTOR ARRAYS The SL360G and SL362C are high performance NPN dual transistor arrays fabricated as m onolithic silicon devices.

Contextual Info: ADVANCE MT4LC8M8E1/B6 MEG X 8 DRAM |U |I C = R O N 8 DRAM 8 MEG X 8 DRAM 3.3V, FAST PAGE MODE FEATURES • Single +3.3V +0.3V power supply • Industry-standard x8 pinout, timing, functions and packages • 13 row-addresses, 10 column-addresses El or 12 row-addresses, 11 column-addresses (B6)

microprocessor Rockwell 6502

Abstract: ifr 2040 service
Contextual Info: ROCKWELL INTL/ SC PDTS TI . dF | 7011073 0 013 3T i T T l 7 - if Y - / / - L . R6518 R6518 One-Chip Microprocessor INTRODUCTION FEATURES SUMMARY • The Rockwell R6518 one-chip microprocessor is a complete 8-bit microcomputer on a single VLSI chip with the exception of

Contextual Info: SAMSUNG ELECTRONICS INC bME J> KM416C256LL Wt 7 ^ 4 1 4 2 DD134S3 b21 « S M C K CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM416C256LL is a CMOS high speed 262,144 b it x 16 D ynam ic Random A ccess M em ory. Its

Contextual Info: GEC PLESSEY SEMICONDS 43E D • 37fc.fiS2S 00133=10 fi B IPLSB GEC PLESSEY ¡ S E M I C O N D U C T O R S ! SL2521C 1.0GHz DUAL WIDEBAND LOGARITHMIC AMPLIFIER N O T R E C O M M E N D E D F O R NEW D E S IG N S The SL2521 is a revolutionary monolithic integrated circuit

ic 307 ex

Abstract: HT-307
Contextual Info: HARRIS SEMICOND SECTOR 33 I D E D | 4 3 0 2 2 7 1 D a i a q t i 1 | H I-3 0 7 /8 8 3 H ARRIS ' T-51-11 Dual SPDT CMOS Analog Switch January 1989 Features Description • th is Circuit Is Processed In Accordance to Mil-Std883 and Is Fully Conformant Under the Provisions of