029 SMD DIODE Search Results

ltw-m140

Abstract: LTW-193ZDS5 piranha led 0.5w LTOE-15D11 ltst-c235kgkrkt LTW-C282DS5 LTST-T670TBL LTST-S326 LTST-C281KRKT LTR-301 002
Contextual Info: 002 003 Alphanumerical Index 012 Application Showcase 021 Quality & Reliability Product SMD LED 022 Low Power SIR 115Kb/s Infrared Transceiver Standard and Low Power FIR 4Mb/s Infrared Transceiver SIR 115kb/s Infrared + Remote Control Transceiver FIR 4Mb/s Infrared + Remote Control Transceiver

Contextual Info: Comchip ESD Protection Array SMD Diode Specialist CSRS065V0-G RoHS Device Working Voltage: 5Volts SO T2 3- 6 Features - Fast Reverse Recovery Time. - Fast Turn on Time. - Low Capacitance SMD Packages. - 16kV IEC61000-4-2 capable. SOT-23-6 .122(3.10) .107(2.70)

st smd diode marking code

Abstract: STMicroelectronics smd DIODE marking code BYW81-200SHRB SMD DIODE 739 510302905 st smd diode marking code b2 STMicroelectronics smd marking code BYW81HR byw81-200cfsy1 byw81-200cfsyhrb
Contextual Info: BYW81HR Aerospace 1 x 15 A and 2 x 15 A - 200 V fast recovery rectifier Features • Very small conduction losses ■ Negligible switching losses ■ High surge current capability ■ High avalanche energy capability ■ Hermetic packages ■ Target radiation qualification:

510302905

Abstract: BYW81-200SHRB
Contextual Info: BYW81HR Aerospace 1 x 15 A and 2 x 15 A - 200 V fast recovery rectifier Features • Very small conduction losses ■ Negligible switching losses ■ High surge current capability ■ High avalanche energy capability ■ Hermetic packages ■ Target radiation qualification:

STMicroelectronics smd marking code

Abstract: st smd diode marking code
Contextual Info: BYW81HR Aerospace 1 x 15 A and 2 x 15 A - 200 V fast recovery rectifier Datasheet - production data Description Packaged in hermetic TO-254 or SMD.5, this device is intended for use in medium voltage, high frequency switching mode power supplies, high frequency DC to DC converters, and other

CT4148

Abstract: CT4148WSN
Contextual Info: Compact Technology CT4148WSN Small signal switching Diodes Foward Power Dissipation 200mW 0805 .086 2.2 .071 (1.8) FEATURES Silicon epitaxial planar diode SMD chip pattern, available in various dimension included 1206 .057 (1.45) .041 (1.05) Fast switching diode.

CT4148WN

Abstract: CT4148 400MW
Contextual Info: Compact Technology CT4148WN Small signal switching Diodes Foward Power Dissipation 400mW 1206 .134 3.40 .118 (3.00) FEATURES Silicon epitaxial planar diode SMD chip pattern, available in various dimension included 0805 &0603 .067 (1.70) .051 (1.30) 12 Fast switching diode.

652 diode

Abstract: 652 smd B340 smd diode rectifier DO-214AC 24 DO-214AC DO-214AC 652-CD214A-B240L CD0603-S01575 CD0603-S0180R 652-CD214A-B130
Contextual Info: NEW TECHNOLOGY NEW TECHNOLOGY NEW TECHNOLOGY NEW TECHNOLOGY NEXT BOURNS SMD Diodes SMD SWITCHING DIODES Bourns offers small-signal high-speed Switching Diodes for switching digital signal applications, in compact chip package size format, which offer PCB real

16N60B2D1

Abstract: igbt induction cooker IXG IGBT
Contextual Info: Advance Technical Information HiPerFASTTM IGBT B2-Class High Speed IGBT VCES = 600 V = 40 A IC25 VCE sat = 2.3 V tfi(typ) = 80 ns IXGA 16N60B2 IXGP 16N60B2 IXGA 16N60B2D1 IXGP 16N60B2D1 D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600

1461 smd

Contextual Info: nixYS AdvancedTechnical Information High Voltage MOSFET IXTA 2N80 IXTP 2N80 N-Channel Enhancement Mode Avalanche Energy Rated V* DSS = ^D25 P DS on “ 800 V 2A 5.5 Q — Symbol Test Conditions VDSS Tj =25°Cto150°C 800 V v DGR Tj = 25° C to 150° C; RGS= 1 M£2

Contextual Info: High Voltage MOSFET IXTA2N100 IXTP2N100 N-Channel Enhancement Mode v DSS ^D25 P DS on =1000 V =2A =7Q 9 Symbol Test Conditions V ¥ dss Tj =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 MQ 1000 V Continuous i2 0 V Transient 130 V VGS v GSM ^D25

2N100

Abstract: C285 IXTP2N100A
Contextual Info: ItilXYS IXTA/fXTP 2 N100 IXTA/IXTP 2 N100A VDSS ^D25 1000 V 1000 V 2A 2A p DS on 7.0 Û 6.0 ß N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VOSS Tj = 25°C to 150°C 1000 V V Tj = 25°C to 150°C; RGS= 1 M fi 1000 V Vos VGSM Continuous

2N100

Abstract: FIGURE10 125OC IXTA2N100 IXTP2N100
Contextual Info: High Voltage MOSFET IXTA 2N100 IXTP 2N100 VDSS = 1000 V ID25 =2A RDS on = 7 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient

Contextual Info: Formosa MS SMD Low Capacitance Integrated ESD Protection array L054BT26 List List. 1 Package outline. 2

264AA

Abstract: SMD-264 TO264AA smd diode 513 TO-264-aa 35N50 diode 253 TO-264AA
Contextual Info: HiPerFET Power MOSFETs ^D S S IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr ^D25 ^DS on 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q trr < 250 ns Preliminary data Symbol Test C onditions Maximum Ratings V DSS Tj = 25°C to150°C

LH1529FP

Abstract: LH1529FPTR LH1529GP LH1529GPTR TS117P opto coupler 5 lead
Contextual Info: LH1529FP/FPTR LH1529GP/GPTR Telecom Switch – 1 Form A Solid State Relay FEATURES • Solid State Relay and Optocoupler in One Package • Surface Mount Package—NEW FLAT PAK • l/O Isolation, 3000 VRMS • LH1529FP, CTR Min.=33% • LH1529GP, CTR Min.=100%

optocoupler a 3131

Abstract: optocoupler 3131 3131 optocoupler a 3131 opto optocoupler bi-directional 4 pin diode receptor LH1529FP LH1529FPTR LH1529GP LH1529GPTR
Contextual Info: LH1529FP/FPTR/GP/GPTR Telecom Switch – 1 Form A Solid State Relay FEATURES • Solid State Relay and Optocoupler in One Package • Surface Mount Package—NEW FLAT PAK • l/O Isolation, 3000 VRMS • LH1529FP, CTR Min.=33% • LH1529GP, CTR Min.=100% • Optocoupler

smd diode 513

Abstract: TO-264 35n50
Contextual Info: HiPerFET Power MOSFETs V DSS IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t D ^D25 DS on 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q t < 250 ns Preliminary data Symbol Test Conditions Maximum Ratings V DSS Tj = 25°C to 150°C

ID110

Contextual Info: Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGA IXGP IXGA IXGP 16N60C2 16N60C2 16N60C2D1 16N60C2D1 VCES IC25 VCE sat = 600 V = 40 A = 3.0 V = 35 ns tfi(typ) D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600

Contextual Info: VISHAY LH1529FP/ FPTR/ GP/ GPTR Vishay Semiconductors Telecom Switch - 1 Form A Solid State Relay Features • Solid State Relay and Optocoupler in One Package • Surface Mount Package - NEW FLAT PAK • Isolation Test Voltage, 3000 VRMS • LH1529FP, CTR Min. = 33 %

Contextual Info: Vishay Intertechnology, Inc. Automotive Internal Combustion Engine Vehicles, Conventional Power Trains One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Automotive 内燃機関車両 スタンダードパワー・トレイン

TO264AA

Abstract: IXFK90N20Q IXFK90N20QS TO-264-aa
Contextual Info: ADVANCED TECHNICAL INFORMATION HiPerFETTM Power MOSFETs IXFK90N20Q IXFK90N20QS Q Class Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C

16N60

Abstract: 16N60C2D1
Contextual Info: Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGA IXGP IXGA IXGP 16N60C2 16N60C2 16N60C2D1 16N60C2D1 VCES IC25 VCE sat = 600 V = 40 A = 3.0 V = 35 ns tfi(typ) D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600

Contextual Info: □ IXYS HIPerFET IXFK90N20Q IXFK90N20QS Power MOSFETs V DSS ^D25 D DS on Q Class Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C 200 V Td = 25°C to 150°C; RGS = 1 M£i 200 V VGS Continuous ±20 V V GSM Transient ±30 V DGR ^D25 Tc = 25°C