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    16N60C2 Price and Stock

    Cyg Wayon Circuit Protection Co Ltd

    Cyg Wayon Circuit Protection Co Ltd WMP16N60C2

    Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO251
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME WMP16N60C2 1
    • 1 $0.92
    • 10 $0.83
    • 100 $0.66
    • 1000 $0.62
    • 10000 $0.62
    		Get Quote
    Richardson RFPD WMP16N60C2 504
    • 1 -
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    Cyg Wayon Circuit Protection Co Ltd WMN16N60C2

    Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO262
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME WMN16N60C2 1
    • 1 $1.01
    • 10 $0.91
    • 100 $0.72
    • 1000 $0.67
    • 10000 $0.67
    		Get Quote
    Richardson RFPD WMN16N60C2 500
    • 1 -
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    Cyg Wayon Circuit Protection Co Ltd WML16N60C2

    PWRMOSFET TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD WML16N60C2 500
    • 1 -
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    Cyg Wayon Circuit Protection Co Ltd WMK16N60C2

    PWRMOSFET TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD WMK16N60C2 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Cyg Wayon Circuit Protection Co Ltd WMM16N60C2

    PWRMOSFET TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD WMM16N60C2 800
    • 1 -
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    Find more 16N60C2 price and stock on Findchips.com

    16N60C2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    16N60

    Abstract: 16N60C2D1
    Contextual Info: Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGA IXGP IXGA IXGP 16N60C2 16N60C2 16N60C2D1 16N60C2D1 VCES IC25 VCE sat = 600 V = 40 A = 3.0 V = 35 ns tfi(typ) D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600


    Original     		16n60c216n60c2d1ic110id110+4o-220728b1123b116n60 PDF

    16N60C2D1

    Abstract: 16N60C2 E153432 IXGC16N60C2D1
    Contextual Info: IXGC 16N60C2 HiPerFASTTM IGBT IXGC 16N60C2D1 C2-Class High Speed IGBT in ISOPLUS220TM Case VCES IC25 VCE sat Electrically Isolated Back Surface tfi(typ) = 600 V = 20 A = 3.0 V = 35 ns Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		16n60c216n60c2d1isoplus220tmic110+4id110ixgc16n60c2d1405b2e153432 PDF

    16N60

    Abstract: 16N60C2D1 IXGC16N60C2D1 16N60C2
    Contextual Info: Advance Technical Information IXGC 16N60C2 HiPerFASTTM IGBT IXGC 16N60C2D1 C2-Class High Speed IGBT in ISOPLUS220TM Case VCES IC25 VCE sat Electrically Isolated Back Surface tfi(typ) = 600 V = 20 A = 3.0 V = 35 ns D1 Symbol Test Conditions Maximum Ratings


    Original     		16n60c216n60c2d1isoplus220tmic110+6id110ixgc16n60c2d1065b1728b1123b116n60 PDF

    16N60C2D1

    Abstract: 16n60c2 16N60
    Contextual Info: Advance Technical Information IXGC 16N60C2 HiPerFASTTM IGBT IXGC 16N60C2D1 C2-Class High Speed IGBT in ISOPLUS220TM Case VCES IC25 VCE sat Electrically Isolated Back Surface tfi(typ) = 600 V = 20 A = 3.0 V = 35 ns D1 Symbol Test Conditions Maximum Ratings


    Original     		16n60c216n60c2d1isoplus220tmic110+7id110ixgc16n60c2d1220tme153432065b1728b116n60 PDF

    ID110

    Contextual Info: Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGA IXGP IXGA IXGP 16N60C2 16N60C2 16N60C2D1 16N60C2D1 VCES IC25 VCE sat = 600 V = 40 A = 3.0 V = 35 ns tfi(typ) D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600


    Original     		16n60c216n60c2d1ic110id110+2o-263o-220 PDF

    16N60C2D1

    Abstract: 16N60 IF110
    Contextual Info: Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGH 16N60C2D1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM


    Original     		16n60c2d1ic110o-247if110+4065b1728b1123b116n60 PDF

    7N60B equivalent

    Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
    Contextual Info: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain


    Original     		7n60b-2x7n60c-2x16n60b2-3x16n60c2-3x+1230n60b2-4x30n60c2-4x40n60b2-5y40n60c2-5y60n60b2-7y60n60c2-7y7n60b equivalent10n60bixgd28n1220n12016n60c2 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF