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IXTA2N100 Datasheets (3)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTA2N100		IXYS	1000V high voltage MOSFET	Original	PDF	76.62KB	4
IXTA2N100P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 2A TO-263	Original	PDF		4
IXTA2N100SN		IXYS	Transistor Mosfet N-CH 1000V 2A 3TO-263 AA	Original	PDF	76.62KB	4

IXTA2N100 Price and Stock

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IXYS Corporation IXTA2N100P Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXTA2N100P		293		1	1 $2.74 10 $2.19 100 $2.03 1000 $2.03 10000 $2.03	Buy Now
Verical	IXTA2N100P		293		26	1 - 10 - 100 $2.85 1000 $2.85 10000 $2.85	Buy Now
Mouser Electronics	IXTA2N100P					1 $5.81 10 $3.71 100 $2.37 1000 $2.37 10000 $2.37	Get Quote
TTI	IXTA2N100P	Tube			300	1 - 10 - 100 - 1000 $2.42 10000 $2.42	Buy Now
IXYS Corporation IXTA2N100 MOSFETs 2 Amps 1000V 7 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTA2N100					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Littelfuse Inc IXTA2N100P Disc Mosfet N-Ch Std-Polar To-263D2/ Tub; \|Littelfuse IXTA2N100P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTA2N100P	Bulk			300	1 - 10 - 100 - 1000 $2.24 10000 $2.10	Buy Now
RS	IXTA2N100P	Bulk		8 Weeks	50	1 - 10 - 100 $3.20 1000 $3.20 10000 $3.20	Get Quote
Onlinecomponents.com	IXTA2N100P					1 - 10 - 100 $2.09 1000 $1.84 10000 $1.72	Buy Now
Littelfuse Inc IXTA2N100P-TRL Ixta2N100P Trl/ Tr; \|Littelfuse IXTA2N100P-TRL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTA2N100P-TRL	Tape & Reel			800	1 - 10 - 100 - 1000 $2.17 10000 $1.72	Buy Now

IXTA2N100 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXTP2N100 Abstract: 2N100 IXTA2N100 Contextual Info: IXTA2N100 IXTP2N100 High Voltage MOSFET VDSS ID25 RDS on = 1000V = 2A ≤ 7Ω Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000	Original	ixta2n100 ixtp2n100 o-263 2n100 +13x-g68	PDF
Contextual Info: High Voltage MOSFET IXTA2N100 IXTP2N100 N-Channel Enhancement Mode v DSS ^D25 P DS on =1000 V =2A =7Q 9 Symbol Test Conditions V ¥ dss Tj =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 MQ 1000 V Continuous i2 0 V Transient 130 V VGS v GSM ^D25	OCR Scan	ixta2n100 ixtp2n100 cto150 o-263 +4o-22qab 1999ixys c2-76 c2-77	PDF
Contextual Info: Polar VHVTM Power MOSFET IXTA2N100P IXTP2N100P IXTY2N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.0A ≤ Ω 7.5Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixta2n100p ixtp2n100p ixty2n100p o-263 +12n100p	PDF
IXTP2N100P Abstract: 2N100P IXTA2N100P IXTP2N100 Contextual Info: PolarTM Power MOSFET IXTA2N100P IXTP2N100P IXTY2N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.0A ≤ 7.5Ω Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixta2n100p ixtp2n100p ixty2n100p o-263 +32n100p 4-03-08-a ixtp2n100	PDF
Contextual Info: PolarTM Power MOSFET IXTA2N100P IXTP2N100P IXTY2N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.0A Ω ≤ 7.5Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixta2n100p ixtp2n100p ixty2n100p o-263 +22n100p 4-03-08-a	PDF
Contextual Info: High Voltage MOSFET VDSS ID25 IXTA2N100 IXTP2N100 RDS on = 1000V = 2A Ω ≤ 7Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000	Original	ixta2n100 ixtp2n100 o-263 2n100 +13x-g68	PDF
Irfp250 irfp460 Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20 Contextual Info: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)	OCR Scan	o-204 o-264 isoplus247 o-220 +16o-252 o-247 o-268 isoplus220 o-263 ot-227b irfp250 irfp460 ixta3n120 36p10 irfp450 bridge n503 irfp460 complementary ixth30n25 ixth48n15 ixth12n100q 16p20	PDF
MOSFET 11N80 Data sheet Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640 Contextual Info: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250	Original	o-247 o-220 o-263 o-264 +1667n10 75n10 50n20 c2-10 c2-18 c2-20 mosfet 11n80 data sheet mosfet 11n80 6n80 ixtn 36n50 c 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 irfp 640	PDF
2N100 Abstract: FIGURE10 125OC IXTA2N100 IXTP2N100 Contextual Info: High Voltage MOSFET IXTA 2N100 IXTP 2N100 VDSS = 1000 V ID25 =2A RDS on = 7 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient	Original	2n100 o-220ab o-263 125oc +3figure10 ixta2n100 ixtp2n100	PDF