Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXTP2N100P Search Results

    IXTP2N100P Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTP2N100P
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 2A TO-220 Original PDF 4
    SF Impression Pixel

    IXTP2N100P Price and Stock

    Select Manufacturer

    IXYS Corporation IXTP2N100P

    MOSFETs 2 Amps 1000V 7.5 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTP2N100P 411
    • 1 $5.33
    • 10 $2.77
    • 100 $2.51
    • 1000 $2.11
    • 10000 $2.11
    Buy Now
    TTI IXTP2N100P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.36
    • 10000 $2.36
    Buy Now
    TME IXTP2N100P 1
    • 1 $4.92
    • 10 $2.57
    • 100 $2.02
    • 1000 $1.81
    • 10000 $1.81
    Get Quote

    Littelfuse Inc IXTP2N100P

    Mosfet, N-Ch, 1Kv, 2A, To-220-3; |Littelfuse IXTP2N100P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark () IXTP2N100P Bulk 1
    • 1 $3.44
    • 10 $3.44
    • 100 $3.44
    • 1000 $3.44
    • 10000 $3.44
    Buy Now
    IXTP2N100P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.03
    • 10000 $1.90
    Buy Now
    RS IXTP2N100P Bulk 8 Weeks 50
    • 1 -
    • 10 -
    • 100 $3.02
    • 1000 $3.02
    • 10000 $3.02
    Get Quote
    Onlinecomponents.com IXTP2N100P
    • 1 -
    • 10 -
    • 100 $2.04
    • 1000 $1.73
    • 10000 $1.62
    Buy Now

    IXTP2N100P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Polar VHVTM Power MOSFET IXTA2N100P IXTP2N100P IXTY2N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.0A ≤ Ω 7.5Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    ixta2n100pixtp2n100pixty2n100po-263+12n100p PDF

    IXTP2N100P

    Abstract: 2N100P IXTA2N100P IXTP2N100
    Contextual Info: PolarTM Power MOSFET IXTA2N100P IXTP2N100P IXTY2N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.0A ≤ 7.5Ω Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    ixta2n100pixtp2n100pixty2n100po-263+32n100p4-03-08-aixtp2n100 PDF

    Contextual Info: PolarTM Power MOSFET IXTA2N100P IXTP2N100P IXTY2N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.0A Ω ≤ 7.5Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    ixta2n100pixtp2n100pixty2n100po-263+22n100p4-03-08-a PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original
    ixtd08n100p-1aixtq22n60pixfh20n80pdws20-200a+6ixfh24n80pixfk180n15pixtq22n50pdwhp16-12ixgh64n60a3ixfb50n80q2 PDF