01JUL02 Search Results

Contextual Info: WSL High Power Vishay Dale Power Metal Strip Resistors, High Power, Low Value, Surface Mount FEATURES • Ideal for all types of current sensing, voltage division and pulse applications including switching and linear power supplies, instruments, power amplifiers

Contextual Info: SBL10xx, SBLF10xx & SBLB10xx Series Vishay Semiconductors formerly General Semiconductor Schottky Barrier Rectifier Reverse Voltage 30 and 40V Forward Current 10A ITO-220AC SBLF10xx 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80) 0.100 (2.54)

tda8362b

Abstract: OM8384J OM8383S TDA8363C msc 1697 BGY252 tda9155 PHILIPS OM8383S tda5331t BGY262
Contextual Info: Philips Semiconductors Product Discontinuation Notice DN45 June 30, 2001 SEE DN45 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

MBR10H100

Abstract: MBRB10H90 MBRF10H90 MBR10H90 MBRB10H100 MBRF10H100
Contextual Info: MBR10H100, MBRF10H100 & MBRB10H100 Vishay Semiconductors New Product formerly General Semiconductor High Voltage Schottky Rectifiers Reverse Voltage 90 to 100V Forward Current 10A Maximum Junction Temperature 175°C ITO-220AC MBRF10H90, MBRF10H100 0.188 (4.77)

Si1417DH

Contextual Info: Si1417DH New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.085 @ VGS = –4.5 V –3.3 0.115 @ VGS = –2.5 V –2.9 0.160 @ VGS = –1.8 V –2.4 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package

20804

Abstract: diode 8405 J-STD-020A Si8405DB
Contextual Info: Si8405DB New Product Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V –4.9 0.070 @ VGS = –2.5 V –4.4 0.090 @ VGS = –1.8 V –4.0 D TrenchFETr Power MOSFET D New MICRO FOOTt Chipscale Packaging

3F6 smd

Abstract: ISP1581BD
Contextual Info: ISP1581 Hi-Speed Universal Serial Bus interface device Rev. 05 — 26 February 2003 Product data 1. General description The ISP1581 is a cost-optimized and feature-optimized Hi-Speed Universal Serial Bus USB interface device, which fully complies with the Universal Serial Bus

Contextual Info: SUD15P01-52 New Product Vishay Siliconix P-Channel 8-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.052 @ VGS = –4.5 V –15 D TrenchFETr Power MOSFET D 175_C Junction Temperature D Low Gate Threshold 0.070 @ VGS = –2.5 V –13 APPLICATIONS

Contextual Info: Si1413DH New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.115 @ VGS = –4.5 V –2.9 0.155 @ VGS = –2.5 V –2.4 0.220 @ VGS = –1.8 V –2.0 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package

Contextual Info: 4 FO-55112-B HONEYWELL PART NUMBER 3 REV 1.372 12 31TW2 SERIES CHART 1 D 2 (.520 ) .620 .010 .035 -A- .015 FAA-PMA LISTING CATALOG LISTING FAA-PMA 31TW2-207 FAA-PMA 31TW2-62 31TW2-205 1 DOCUMENT 0093066 CIRCUIT MADE WITH TOGGLE LEVER IN CENTER INTERPHONE

MBR1535

Abstract: MBR1550
Contextual Info: MBR15xxCT, MBRF15xxCT & MBRB15xxCT Vishay Semiconductors formerly General Semiconductor Dual Schottky Barrier Rectifier Reverse Voltage 35 to 60V Forward Current 15A ITO-220AB MBRF15xxCT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80) 0.100 (2.54)

S-21092

Abstract: SI4888DY
Contextual Info: Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 16 0.010 @ VGS = 4.5 V 13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si1021R New Product Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) ID (mA) –60 4 @ VGS = –10 V –1 to –3.0 –190 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers,

Si8902EDB

Abstract: J-STD-020A
Contextual Info: Si8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET

Si4356DY

Contextual Info: Si4356DY New Product Vishay Siliconix N-Channel 30-V MOSFET FEATURES D TrenchFETr Power MOSFETS D Optimized for Low-Side Synchronous Rectifier Operation PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.006 @ VGS = 10 V 17 0.0075 @ VGS = 4.5 V 14 APPLICATIONS

smd 66mc

Abstract: 66mc 0C032 ISP1561BM isp1561 Embedded Programming guide "Hot Plug and Play"
Contextual Info: ISP1561 Hi-Speed USB PCI host controller Rev. 01 — 06 February 2003 Product data 1. General description The ISP1561 is a PCI-based, single-chip Universal Serial Bus USB Host Controller. It integrates two Original USB Open Host Controller Interface (OHCI) cores, one

SUM85N03-06P

Contextual Info: SUM85N03-06P New Product Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES rDS(on) (W) ID (A) 0.006 @ VGS = 10 V 85 D D D D 0.009 @ VGS = 4.5 V 77 APPLICATIONS PRODUCT SUMMARY V(BR)DSS (V) 30 TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency

SUD15P01-52

Contextual Info: SUD15P01-52 New Product Vishay Siliconix P-Channel 8-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.052 @ VGS = –4.5 V –15 D TrenchFETr Power MOSFET D 175_C Junction Temperature D Low Gate Threshold 0.070 @ VGS = –2.5 V –13 APPLICATIONS

SUB15P01-52

Abstract: SUP15P01-52
Contextual Info: SUP/SUB15P01-52 Vishay Siliconix P-Channel 8-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.052 @ VGS = –4.5 V –15 –8 0.070 @ VGS = –2.5 V –10 0.105 @ VGS = –1.8 V –10.5 S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View

Contextual Info: Si6876EDQ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rS1S2(on) (Ω) IS1S2 (A) 0.025 @ VGS = 10 V 6.2 D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D 4-kV ESD Protection 0.030 @ VGS = 4.5 V 5.7 APPLICATIONS

Contextual Info: Si1417DH New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.085 @ VGS = –4.5 V –3.3 0.115 @ VGS = –2.5 V –2.9 0.160 @ VGS = –1.8 V –2.4 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package

MBR1545

Abstract: MBR1535CT MBR1545CT MBR1550CT MBR1560CT MBRF1535CT MBRF1560CT 1702K MBR1535 MBR1550
Contextual Info: MBR15xxCT, MBRF15xxCT & MBRB15xxCT Vishay Semiconductors formerly General Semiconductor Dual Schottky Barrier Rectifier Reverse Voltage 35 to 60V Forward Current 15A ITO-220AB MBRF15xxCT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80) 0.100 (2.54)

S-20804

Abstract: MARKING 8401
Contextual Info: Si8401DB New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V –4.9 0.095 @ VGS = –2.5 V –4.1 –20 D TrenchFETr Power MOSFET D New MICRO FOOTt Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and

SUB15P01-52

Abstract: SUP15P01-52
Contextual Info: SUP/SUB15P01-52 Vishay Siliconix P-Channel 8-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.052 @ VGS = –4.5 V –15 –8 0.070 @ VGS = –2.5 V –10 0.105 @ VGS = –1.8 V –10.5 S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View