SI1417DH Search Results
SI1417DH Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| Si1417DH | Vishay Intertechnology | P-Channel 12-V (D-S) MOSFET | Original | 41.86KB | 5 | ||
| SI1417DH | Vishay Siliconix | MOSFETs | Original | 41.86KB | 5 | ||
| Si1417DH SPICE Device Model | Vishay | P-Channel 12-V (D-S) MOSFET | Original | 200.95KB | 3 |
SI1417DH Price and Stock
Vishay Siliconix SI1417DH-T1Trans MOSFET P-CH 12V 2.7A 6-Pin SC-70 T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI1417DH-T1 | 2,320 | 1 |
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Buy Now | ||||||
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SI1417DH-T1 | 1,856 |
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Buy Now | |||||||
SI1417DH Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: New Product Si1417DH Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.085 at VGS = - 4.5 V - 3.3 0.115 at VGS = - 2.5 V - 2.9 0.160 at VGS = - 1.8 V - 2.4 • TrenchFET Power MOSFETS: 1.8 V Rated • Thermally Enhanced SC-70 Package |
Original |
si1417dhsc-70ot-363si1417dh-t1+2 | |
Si1417DHContextual Info: SPICE Device Model Si1417DH Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
si1417dh18-jul-08 | |
Si1417DHContextual Info: Si1417DH New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.085 @ VGS = –4.5 V –3.3 0.115 @ VGS = –2.5 V –2.9 0.160 @ VGS = –1.8 V –2.4 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package |
Original |
si1417dhsc-70ot-363s-20918--rev+1 | |
Si1417DH
Abstract: 828S
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Original |
si1417dh15-jul-02828s | |
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Contextual Info: Si1417DH New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.085 @ VGS = –4.5 V –3.3 0.115 @ VGS = –2.5 V –2.9 0.160 @ VGS = –1.8 V –2.4 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package |
Original |
si1417dhsc-70ot-36308-apr-05 | |
Si1417DHContextual Info: SPICE Device Model Si1417DH Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
si1417dhs-50151rev07-feb-05 | |
Si1417DH
Abstract: 71197
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Original |
si1417dhsc-70ot-363si1417dh-t1+3 | |
AN609
Abstract: Si1417DH
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Original |
si1417dhan60901-mar-06 | |
Siliconix
Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
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Original |
2n70002n70022n7002e2n7002k+15 | |
GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
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si9165si9169600-matssop-20+12 |