SI1413DH Search Results

Si1413DH

Contextual Info: SPICE Device Model Si1413DH Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si1413DH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.115 at VGS = - 4.5 V - 2.9 0.155 at VGS = - 2.5 V - 2.4 0.220 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated

Contextual Info: Si1413DH New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.115 @ VGS = –4.5 V –2.9 0.155 @ VGS = –2.5 V –2.4 0.220 @ VGS = –1.8 V –2.0 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package

Part marking SC70 bc

Contextual Info: Si1413DH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.115 at VGS = - 4.5 V - 2.9 0.155 at VGS = - 2.5 V - 2.4 0.220 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated

Si1413DH

Contextual Info: SPICE Device Model Si1413DH Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

AN609

Abstract: Si1413DH
Contextual Info: Si1413DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

marking code BC

Abstract: Si19xxEDH
Contextual Info: Si1413DH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.115 at VGS = - 4.5 V - 2.9 0.155 at VGS = - 2.5 V - 2.4 0.220 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated

Si1413DH

Abstract: marking code BC
Contextual Info: Si1413DH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.115 at VGS = - 4.5 V - 2.9 0.155 at VGS = - 2.5 V - 2.4 0.220 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated

Si1413DH

Abstract: marking code BC
Contextual Info: Si1413DH New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.115 @ VGS = –4.5 V –2.9 0.155 @ VGS = –2.5 V –2.4 0.220 @ VGS = –1.8 V –2.0 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package

marking code BC

Abstract: Si1413DH
Contextual Info: Si1413DH New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.115 @ VGS = –4.5 V –2.9 0.155 @ VGS = –2.5 V –2.4 0.220 @ VGS = –1.8 V –2.0 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package

Si1413DH

Contextual Info: SPICE Device Model Si1413DH Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Contextual Info: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123

Contextual Info: 19-0810; Rev 0; 4/07 Overvoltage Protectors with External pFET Features The MAX4923–MAX4926 overvoltage protection OVP controllers protect low-voltage systems against high-voltage faults of up to +28V with an appropriate external pFET. When the input voltage exceeds the overvoltage lockout (OVLO) threshold, or falls below the

GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no

C9847

Abstract: MMD41 C2792 foxconn X-TAL 25MHz VT1612 MMD56 CB1410-B0 MMD54 MMD50
Contextual Info: A B C D E TPC02 MLB 4 3 2 1 PAGE 01 : COVER PAGE PAGE 02 : SYSTEM BLOCK DIAGRAM PAGE 03 : CPU-1 PAGE 04 : CPU-2 PAGE 05 : NB-1 PAGE 06 : NB-2 PAGE 07 : NB-3 PAGE 08 : SB-1 PAGE 09 : SB-2 PAGE 10 : SB-3 PAGE 11 : CLOCK PAGE 12 : DDR SODIMM PAGE 13 : DDR_TERMINATOR & VTT CAP