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    17SEP12 Search Results

    17SEP12 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Series REC 115 L www.vishay.com Vishay Sfernice Precision Linear Transducers, Conductive Plastic, up to 1000 mm FEATURES • Measurement range 25 mm to 1000 mm • High accuracy ± 1 % down to ± 0.025 % • Excellent repeatability • Essentially infinite resolution


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    2002/95/ec2011/65/eujs709a02-oct-12 PDF

    SMD DATASHEET

    Contextual Info: TAS CNS www.vishay.com Vishay Sfernice Conformal Coating, Single-In-Line Thin Film Resistor, Through Hole Networks FEATURES • • • • • Actual Size These networks are designed to be used in analog circuits in conjunction with operational amplifiers. In addition to the


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    2002/95/ec2011/65/eujs709a02-oct-12+1smd datasheet PDF

    Contextual Info: VS-GB300TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 300 A FEATURES • 10 s short circuit capability • VCE on with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case


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    vs-gb300th120n2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    fast diode for welder application

    Contextual Info: VS-GB200TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES • 10 s short circuit capability • VCE on with positive temperature coefficient • Maximum junction temperature 150 °C • Low switching losses


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    vs-gb200th120u2002/95/ec2011/65/eujs709a+202-oct-12fast diode for welder application PDF

    ORNTA

    Contextual Info: ORN Divider Vishay Dale Thin Film モールド50 mil ピッチ、 デュアルインライン抵抗器、表面実装ネットワーク 特徴 • 製品高さ 0.068" (1.73 mm)(最大) • 抵抗素子内部のはんだ付け作業を必要としない


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    ms-0122011/65/eu2002/95/ecjs709a+202-oct-12ornta PDF

    Contextual Info: 4 FO-55112-B HONEYWELL PART NUMBER 3 REV 1.372 12 31TW2 SERIES CHART 1 D 2 (.520 ) .620 .010 .035 -A- .015 FAA-PMA LISTING CATALOG LISTING FAA-PMA 31TW2-207 FAA-PMA 31TW2-62 31TW2-205 1 DOCUMENT 0093066 CIRCUIT MADE WITH TOGGLE LEVER IN CENTER INTERPHONE


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    fo-55112-b31tw231tw2-20731tw2-62+531tw2-20517sep1230vdc01jul025m-1982 PDF

    SQM100N04-2m7

    Contextual Info: SQM100N04-2m7 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 40 RDS(on) () at VGS = 10 V • 100 % Rg and UIS Tested 0.0027


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    sqm100n04-2m7aec-q101o-263sqm100n04-2m7-ge3+32011/65/eu2002/95/ec12-mar-12 PDF

    Contextual Info: PLT www.vishay.com Vishay Dale Thin Film Precision Low TCR Thin Film Resistor, Surface Mount Chip, ± 5 ppm/°C TCR, 0.01 % Tolerance FEATURES • TCR of ± 5 ppm/°C standard • Tolerances to ± 0.01 % • Anti corrosion resistant film with SPM special


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    2002/95/ec2011/65/eujs709a02-oct-12 PDF

    Contextual Info: VS-100BGQ100HF4 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 100 A FEATURES Cathode • • • • • Anode PowerTab 175 °C max. operating junction temperature High frequency operation Low forward voltage drop Continuous high current operation


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    vs-100bgq100hf4aec-q1012002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: Series REC 110 L www.vishay.com Vishay Sfernice Precision Linear Transducers, Conductive Plastic, up to 450 mm FEATURES • Large measurement range • High accuracy ± 1 % down to ± 0.05 % • Essentially infinite resolution • Easy mounting • Material categorization: For definitions of compliance


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    2002/95/ec2011/65/eujs709a02-oct-12 PDF

    Contextual Info: VS-GB75TP120N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 1200 V, 75 A FEATURES • High short circuit capability, self limiting to 6 x I • 10 s short circuit capability • VCE on with positive temperature coefficient • Low inductance case


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    vs-gb75tp120n2011/65/eu2002/95/ec12-mar-12 PDF

    Contextual Info: SQM60N20-35 www.vishay.com Vishay Siliconix Automotive N-Channel 200 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 200 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.035


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    sqm60n20-35aec-q101o-263sqm60n20-35-ge3+32002/95/ec2011/65/eujs709a PDF

    Contextual Info: VS-GB200LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient


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    vs-gb200lh120n2011/65/eu2002/95/ec12-mar-12 PDF

    Contextual Info: VS-GB200NH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient


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    vs-gb200nh120n2011/65/eu2002/95/ec12-mar-12 PDF

    Contextual Info: VS-GT100TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A FEATURES • Low VCE on trench IGBT technology • 5 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C


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    vs-gt100tp60n2011/65/eu2002/95/ec12-mar-12 PDF

    Contextual Info: VS-GB100NH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in1 Package, 1200 V and 100 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient


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    vs-gb100nh120n2011/65/eu2002/95/ec12-mar-12 PDF

    Contextual Info: VS-GB150TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 150 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient


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    vs-gb150th120n2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: VS-GB200TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES • Low VCE on SPT+ IGBT technology • 10 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C


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    vs-gb200th120n2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: VS-GA200TH60S www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 600 V and 200 A FEATURES • High short circuit capability • 10 s short circuit capability • VCE on with positive temperature coefficient • Maximum junction temperature 150 °C


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    vs-ga200th60s2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: VS-100BGQ045HF4 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 100 A FEATURES • 150 °C max. operating junction temperature • High frequency operation Cathode • Ultralow forward voltage drop • Continuous high current operation


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    vs-100bgq045hf4aec-q1012002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: VS-GT100TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A FEATURES • Low VCE on trench IGBT technology • 5 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C


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    vs-gt100tp60n2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: Series ECS www.vishay.com Vishay Sfernice Precision Rotative Transducers, Conductive Plastic, Economic Series ECS FEATURES • • • • • • Size 09: (7/8") 22.2 mm Long life: 5 million cycles Bush or servo mounting types available Rear comolded terminals


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    2002/95/ec2011/65/eujs709a02-oct-12 PDF

    Contextual Info: SQM100N04-2m7 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 40 RDS(on) () at VGS = 10 V • 100 % Rg and UIS Tested 0.0027


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    sqm100n04-2m7aec-q101o-263sqm100n04-2m7-ge3+32002/95/ec2011/65/eujs709a PDF

    Contextual Info: New Product VS-100BGQ030HF4 www.vishay.com Vishay Semiconductors Schottky Rectifier, 100 A FEATURES Cathode • • • • • Anode PowerTab 150 °C max. operating junction temperature High frequency operation Ultralow forward voltage drop Continuous high current operation


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    vs-100bgq030hf4aec-q1012002/95/ec2011/65/eu+2js709a02-oct-12 PDF