00Q13 Search Results

CS454F02

Abstract: CS454F05 CS454S02 CS454S05 CS455S08 CS455S10 CS455S12 CS455S15
Contextual Info: COLLMER SEMICONDUCTOR INC H5E » • £234715 00Q1344 fc ■ 7 ^ ^ 3 ' O S ' CS454 ■CS455 Series ¿2 High Voltage, High Current Rectifiers tS Features: • • • • • • • Ratings to 15 Kilovolts Glass Passivated Controlled Avalanche Junctions High Surge Capability

NCR5380

Contextual Info: LOGIC DEVICES INC 5bE D • SSbSiOS 00Q1373 3 ;_ L5380/L53C80 CMOS SCSI Bus Controller DESCRIPTION FEATURES Q Asyncronous Transfer Rrate Up to 4 M bytes/sec □ Pin and Functionally Compatible with NCR5380, but 2.5x Faster □ Low Power CMOS Technology

12575

Contextual Info: broadband high dynamic range Frequency Mixers LEVEL 13 -M 3dBm LO, up to +9dBm RF SCIENTIFIC/ MINI-CIRCUITS M^E D Models RMS-2MH LRMS-2MH flObflflll 00Q137S 7Tti « S C C 9 - , computer-automated performance data typical production unit / for data of other models consult factory

Gunn Diode symbol

Abstract: Gunn Diode impatt diagram of gunn diode 00Q13CH DVE6900 DIODE in 5060 GaAs Gunn Diode varactor alpha 2025 ct
Contextual Info: ALPHA IND/ SEMICONDUCTOR MAE D • DSfiSHHB 00Q13CH ES2 * A L P High Q GaAs Tuning Diodes -T - C TM «t Features ■ ■ ■ 50 Percent Higher Q than Comparable Silicon Diodes Wide Tuning Ratio 25 and 45 Volt Series Types ■ ■ DVE4500 Series DVE6900 Series

A2 diode

Abstract: 1N414S
Contextual Info: I T T CORP/ I T T CMPNTS 31E D • 4bê2bê4 00Q13QÔ 1 ■ SILICON DIODES - - - — - - - - : General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Max. Aver. Power Junction Rectified Dissipation TemperaCurrent lo at 25 'G

1n4148 ITT

Abstract: 1N914 ITT 1N914/1N4148 1n4448 itt 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153
Contextual Info: I T T CORP/ I T T CMPNTS 31E D • 4bê2bê4 00Q13QÔ 1 ■ SILICON DIODES - - - - - — - - : G en era l P u r p o s e a n d S w it c h in g D io d e s in D O -3 5 P a ck a ge Type Peak Inv. Voltage PIV Max. Aver. Rectified Current lo Power

Contextual Info: PCI KSD1616/1616A NPN Epitaxial Silicon Transistors Semiconductor AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING • Complement to KSD1616/1616A ABSOLUTE MAXIMUM RATINGS (Ta = 2 5 T C h a ra cteristic Collector-base Voltage :KSD1616 :KSD1616A Collector-Emitter Voltage:KSD1616

Contextual Info: Specifications • Contacts: phosphor bronze, standard; bare CDA 725, optional • Contact Plating: 30/j. in. gold in mating area over 5 0 ^ in. nickel, standard: 10n in. gold (in mating area) over 50ju in. nickel, optional; 50¡x in. gold (in mating area) over 50p. in. nickel, optional; 100ju in. tin-lead,

KA3213

Abstract: KA32 KS5112 30A10 3A29
Contextual Info: DENSE-PAC 32 Megabit CMOS DRAM DPD2MX16M2H3 M I C R O S Y S T E M S PRELIMINARY DESCRIPTION: The DPD2MX16M2H3 "STA C K" module is a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC stacked and leaded for

LDD-C514R1

Abstract: LDD-A514R1 LDQ-N516R1-RA LDQ-M512R1 IFR 630 MF 1T4 tube RGB DOT matrix 8x8 LED common anode LDS-AD16RI LDQ-N516R1 LDS-A3914RI
Contextual Info: le d -d is p la y s ta b le o f c o n te n ts TABLE OF CONTENTS Page s GENERAL INFORMATION .2 PART NUMBERING S Y S T E M . 3 INTENSITY S E LE C T IO N . . . 5 ELECTRO/OPTICAL LED CHIP

Contextual Info: H ig h P e r fo r m a n c e 128K x8 C M O S SR A M •■ A S7C 1025 A S7C 31025 H ^ lL A 1 2 8 K X 8 C M O S SR A M C o m m o n I / O • Organization: 131,072 w ords x 8 bits • High speed - 1 0 /1 2 /1 5 /2 0 ns address access time - 3 /3 / 4 /S ns output enable access time

Contextual Info: LOGIC D EV ICES IN C 5bE D • SSbS^OS 000130? _ L ■ T ~ 9 6 -0 9 -0 9 L29C818 Serial Scan Shadow Register DESCRIPTION Q Octal Register with Additional 8-bit The L29C818 is a high-speed octal register designed especially for appli­

Contextual Info: I ll^ IC WORKS W137 Bx Notebook System Frequency Synthesizer Features • Maximized EMI suppression using IC WORKS’ Spread Spectrum Technology Key Specifications • Two copies of CPU output Supply Voltages: • Six copies of PCI output Synchronous w/CPU output

Contextual Info: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6228 FEATURES OTHER RADIATION • Fabricated with RICMOS IV-E Silicon on Insulator SOI 0.7 |xm Process • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)

Contextual Info: V T C INC W • 9386929 V T C IN C D I ' c13ôûci2 cl GDG13m b J ~ , . _ _ V 99D A 4 7 01341 _ 6 T D - 79-07-20 QUAD HIGH-SPEED, FAST-SETTLING OPERATIONAL AMPLIFIER FEATURES • Quad Version of VA706 Fast-Settling Op Amp • Fast Settling Time: ±0,1% in 200ns

an 17830 A

Abstract: MIL-C-83503 an 17830 MILC83503 CWR-21 CDA725
Contextual Info: ^ Specifications @ • Contacts: phosphor bronze, standard; bare CDA 725, optional • Contact Plating: 3 V in. gold (in mating area over over 50id in. nickel, standard; 10ju gold (in mating area) over 50 ß in. nickel, optional; 50ju in. gold, (in mating

Contextual Info: CHAPTER 1 1.1 O V E R V IE W 1.2 FEATURES Supports system-level navigation processing Supports DVD 1 .OVideo O bject VOB bit streams Decodes MPEG-2 and MPEG-1 video in real time Display: NTSC (720x480 @ 60 fps) and PAL (720x576 @ 50 fps) Decodes Dolby AC-3, LPCM , or

1.2 volt RS-343

Abstract: HDAC97000 330 ohm resistor ALI 3101 C 6ca DIODE
Contextual Info: .SIGNAL PROCESSING 2SE D • SIGNAL PROCESSING TECHNOLOGIES 0 2 ^ 1 7 0G013b7 3 HDAC97000 8-BIT, HIGH SPEED RASTER D/A CONVERTER FEATURES: APPLICATIONS: • 125 M W PS Conversion Rate • PIn-Compatlble with AD9700 with Improved Performance • Color or Monochrome Displays

Contextual Info: r C Low Power, 400MHz High Speed Triple Buffer calori O CVA4401 FEATURES GENERAL DESCRIPTION • • • • • • • The CVA4401 is a low power, wide bandwidth triple buffer amplifier. The CVA4401 delivers a -3dB bandwidth of 400MHz, 150mA, and 110OOV/jis while only drawing 5mA of

A1220A-Y

Abstract: A1220A bd135
Contextual Info: TO-126 Plastic Package Transistors PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. A B 7.4 10.5 7.8 10.8 C 2.4 0.7 2.7 0.9 D E F G 2.25 TYP. 0.49 I 0.75 L 15.7 TYP. 1.27 TYP. M 4.5 TYP. P 3.75 TYP. 3.0 3.2 S 2.5 TYP. N ALL DIMENSIONS IN MM

2SC2340

Abstract: NE568 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857
Contextual Info: NEC/ □427414 0001323 4 1SE D CALIFORNIA r-3 3 -c s NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 SER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H fs : 4.2 GHz The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers

MPSC16

Contextual Info: HiL-sfllilpn ^sssss d 11 I v v . N O L □ G G T - 9 6 0 1 0 Remote Access Coprocessor Coorocc Preliminary Revision 1.0 8/ 12/97 Y Please contact Galileo Technology for possible updates before finalizing a design. FEATURES_ • Integrated serial communications controller and

Contextual Info: REVISIONS APPROVED DATE YR-MO-DA DESCRIPTION LTR M. A. Frye 94-03-24 Update document boilerplate. Add column for data retention to section 1.2.1. Convert case outline X reference to MIL-STD-1835. Add device types 06 and 07. Add CAGE codes 65786 and 0EU86 as sources of supply for device types

pv34

Abstract: Fairchild Imaging CCD
Contextual Info: PRELIMINARY LORAL CCD412 512 x 512 Element Full Frame Image Sensor Fairchild Im aging Sensors FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ 512 x 512 Photosite Array 15/im x 15nm Pixel 7.68mm x 7.68mm Image Area 100% Fill Factor Multi-Pinned Phase MPP Option