100JU Search Results

Contextual Info: Specifications • Contacts: phosphor bronze, standard; bare CDA 725, optional • Contact Plating: 30/j. in. gold in mating area over 5 0 ^ in. nickel, standard: 10n in. gold (in mating area) over 50ju in. nickel, optional; 50¡x in. gold (in mating area) over 50p. in. nickel, optional; 100ju in. tin-lead,

Lpel

Abstract: Intel 2147H 2147H HM6147HLP-35 HM6147HLP-45 HM6147HLP-55 HM6147HP-35 HM6147HP-45 HM6147HP-55 hc5v1
Contextual Info: H M 6147H S e r ie s Maintenance Only 4096-word x 1-bit High Speed CMOS Static RAM FEATURES » High Speed: Fast Access Time 35ns/45ns/55ns (max. » Low Power Standby and Low Power Operation, Standby: 100juW (typ.)/5 p W (typ.) (L-version), O peration: 150mW typ.

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER SSP—S0863S16 04,90 [00,193] 22,00 ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X [ 0,8 6 6 ] PARAMETER MIN PEAK WAVELENGTH UNITS TEST COND nm 12.0 Vf Vr lr =100juA 800 mcd If = 80mA 30 2x theta 5.0 VIEWING ANGLE 23 [0,921] MIN,

SSP-LXC0476U4

Contextual Info: UNCONTROLLED DOCUMENT REV. A B PART NUMBER REV. SSP-LXC0476U4 B E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #10691. E.C.N. #1BRDR. ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X PARAMETER TYP PEAK WAVELENGTH 626 FORWARD VOLTAGE lf= 4 0 m A MAX UNITS 4.6 Vf Vr lr =100juA

Contextual Info: UNCONTROLLED DOCUMENT REV. PART NUMBER S S P - D 2 9 E 1 O S U G C - 12V ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 T PARAMETER MIN PEAK WAVELENGTH V f=12 V TYP MAX UNITS TEST COND 574 nm 12 Vf Vr lr=100juA AXIAL INTENSITY 1000 mcd Vf = 1 2 V VIEWING ANGLE 25

hm6287

Abstract: 6287p
Contextual Info: HM6287 Series 6553-word x 1-bit High Speed CMOS Static RAM • FEA TU RES HM6287P Series • High Speed: Fast Access Time 45/55/70ns max. • Single 5V Supply and High Density 22 Pin Package • Low Power Standby and Low Power Operation Standby: 100juW (typ.)/10)uW (typ.) (L-version)

Contextual Info: CMOS SRAM KM616V513 32,768 WORD x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast A c c e ss Time : 17, 20, 25ns(max.) • Low Power Dissipation Standby (TTL) 3mA (max.) . (CMOS) : 100juA (max.) Operating KM616V513-17

Contextual Info: UNCONTROLLED DOCUMENT REV, E.C.N. A 10 ,0 0 4.50+0.75 [ 0 .3 9 4 ] REV. L D D - A 8 1 6RI A NUMBER AND REVISION COMMENTS PARAMETER MIN TYP PEAK WAVELENGTH FORWARD VOLTAGE UNITS TEST COND nm 1 .7 2.3 Vf lr=100juA Vr jjcd 13,000 EMITTED COLOR: lf= 1 OmA RED

KTA1268

Abstract: NF05 kta1268 transistor
Contextual Info: K EC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1268 EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • Low Noise. : NF=3dB Typ. , Rg=100ß, V Ce=-6V , Ic=-100juA, f=lkHz : NF=0.5dB(Typ.), Rg=lk&, V Ce=-6V , Ic=-100j[/A, f=lkHz.

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. LDD —C 5 0 0 3 R I ELECTRO-OPTICAL CHARACTERISTICS Ta = 25'C PARAMETER MIN PEAK WAVELENGTH I f=10m A TYP MAX 585 FORWARD VOLTAGE 2.5 Vf 5.0 AXIAL INTENSITY lr=100juA Vr jucd 3900 EMITTED COLOR: TEST COND nm 2.1 REVERSE VOLTAGE

XLS48C64-150

Abstract: XLS48C64-200 XLS48C64-250 XLS48C64C-150
Contextual Info: M ICRO ELECTRO N ICS . INC Preliminary Data Sheet February 1985 FEATURES • ■ ■ ■ ■ ■ ■ ■ 8192 x 8 Bit E2PROM Single 5-Volt Supply Fast Data Access: 150ns Low Power Requirements: - 100ju,a Standby - 100/u.a Quiescent Automatic Write Cycle Time-out

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER SSP—S0867U16 04,90 [00,193] 22,00 ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X [ 0,8 6 6 ] PARAMETER MIN 16.0 5.0 TEST COND Vf Vr lr =100juA 2,000 mcd If = 80mA 30 2x theta VIEWING ANGLE 23 [0,921] MIN, UNITS nm 14.0 REVERSE VOLTAGE

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER SSA-LXB07USBW ELECTRO -O PTICA L CHARACTERISTICS Ta = 25 'C PARAMETER MIN PEAK WAVELENGTH REVERSE VOLTAGE lf = 20 mA MAX UNITS 3.5 4.0 Vf 5.0 Vr 50 VIEWING ANGLE 1 BO o E AXIAL INTENSITY lr=100juA I f= 2 0 m A 2x theta EMITTED COLOR:

STR 50115

Abstract: STR 50115 A 307-1B Sp 9685 94V-0 SR-01 golden
Contextual Info: •Mirsï 1 K A T 'L H O U S IK G :S iIU B i£ O W iT 4 3 « tS H E m i3 7 Of 7 7 .K X l‘CGOLO WlftOPHOSPHCW BfiOKZt, ALLOY UKS CSIOOO. PLk^lHGOtO^fXnfa/£R 2.S 3 * 100JU*Hi., Cg $PPOXt^f> INSULATED WIRE: ' ' STYLE A: 27 AWG. 7 STRANDS OF TINNED COPPER VIRE. P VC INSULATION.

Contextual Info: UNCONTROLLED DOCUMENT 0 4 ,9 0 PART NUMBER REV. S S P — LXS0867U16 [0 0 ,1 9 3 ] ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X 21,90 [0 ,8 6 2 ] PARAMETER MIN PEAK WAVELENGTH 25,50 [1,004] 16.0 5.0 TEST COND Vf Vr lr =100juA 2,000 mcd If = 80mA 30 2x theta

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. SSP-04MW B3S28 REV. I E.C.N, NUMBER AND REVISION COMMENTS ELECTRO-OPTICAL CHARACTERISTICS Ta = 25‘C PARAMETER MIN PEAK WAVELENGTH MAX UNITS 30 5.0 Vf Vr lr=100juA Vf=2BV AXIAL INTENSITY 3500 mcd VIEWING ANGLE 30 2x theta

DD133

Contextual Info: u im ILDMW LTCl 443/LTCl444/LTC1445 M icrop o w er Q u a d C om parators TECHNOLOGY M a y 1995 KATUACS DCSCAIPTIOfl • Ultra-Low Quiescent Current: 8.5pA Max Over Extended Temperature Range ■ Reference Output Drives O.OIjjF Capacitor ■ Reference Output Can Source 100juA Min

SSL-LX50133GD

Contextual Info: PART NUMBER UNCONTROLLED DOCUMENT 4.50 05.70 [ 00 .2 2 4 ] [ 00 .193 ] 7,62 ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X [ 0,300] PARAMETER 3,20 [ 0,126] 12,50 u [ 0,4 9 2 ] ANDDE [ 0,022 ] TYP, 19,71 2,54 [ 0,100] [ 0,7 7 6 ] 0,8 [ 0 ,031 ] TYP, Vr l r=100juA

Contextual Info: H M 6 1 1 7 P -3 , H M 6 1 1 7 P - A 2 0 4 8 -w o rd x 8 -b it High Speed Static CMOS RAM •FEA TURES • Single 5V Supply and High Density 24 pin Package. • • • • High Speed: Fast Access Tim e 150ns/200ns max. Low Power Standby and Standby: 100juW (typ.)

26C1000A

Abstract: MX26C1OOOA 26C1000
Contextual Info: MX26C1OOOA 1 M-BIT[1 28K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • • • • • • • • • Standby current: 100juA • 100 minimum erase/program cycles • Package type: - 32 pin PDIP - 32 pin SOP - 32 pin PLCC - 32 pin T S O P m ^ ^ A - t t P

Contextual Info: Specifications @ • Contacts: phosphor bronze, standard; bare CDA 725, optional • Contact Rating: 100ju in. tin-lead, standard; 10m in­ gold over 50/j in. nickel, optional; 30/i in. gold over 50ß in. nickel, optional; 50 1 in. gold over 50/i in. nickel, optional; 200/u in. tin-lead, optional

HM6147

Abstract: NMOS 2147H 2147H HM6147H-35 HM6147HLP-35 HM6147HLP-45 HM6147HLP-55 HM6147HP-35 HM6147HP-45 HM6147HP-55
Contextual Info: Maintenance Only HM6147H Series 4096-word x 1-bit High Speed CMOS Static RAM •FEATURES • • • High Speed: Fast Access Time 35ns/45ns/55ns max. Low Power Standby and Low Power Operation, Standby: 100juW (typ.)/5/nW (typ.) (L-version), O peration: 150mW typ.

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2003 RELEASED FOR PUBLICATION APR ,2 0 0 3 . LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. E DIST R E V IS IO N S B LTR NOTES: C MATERIAL HOUSING : CONTACTS : SHELL : SCREW : BOARD LOCK : SCREW OF TORQUE THERMOPLASTIC, U L94V-0, BLACK

4-1634220-2

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2003 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. APR ,2003- LOC ALL RIGHTS RESERVED. R E V IS IO N S DIST E B LTR c NOTES: 1. MATERIAL HOUSING : CONTACTS : SHELL : SCREW : BOARD LOCK : SCREW OE TORQUE 2. EINISH