00012S Search Results

MIL-R-83401

Contextual Info: VISHAY INTERTECH/ ELEK 34E t • miS232 00012S1 0 O V I S H DATA SHEET VPN-100 c A COMPANY Precision Hermetic SIP Resistor Networks OF VISHAY FOIL RESISTORS ▼ Models 1461,1462,1463, 1464 and 1466 VISHAY Precision Hermetic Resistor Networks are now available in SIP Single-ln-Line Pin configurations. Five

10N03

Abstract: 06N03 14N03 04N03 VU02 VU020-10N03 12n03 16N03
Contextual Info: 4b E D i x • 4b f l b 52b 00012S 1 y s corp □IXYS b » I X Y -r * 7. V o * ‘ November 1991 Data Sheet No. 911002A Three-Phase Diode Rectifier Bridge VU020 FEATURES:_ Isolated Direct Copper Bond Base Plate Easy Chassis Mounting

150a gto

Abstract: CLD41 CLD41B CLD42 CLD42A CLD42B CLD41A K8060
Contextual Info: FASCO INDS/ SENISYS 4QE 34Ti73fl D 00012SÔ 7 EaSÈNI I B E EEia • ' T - t - t l ' JD I CLD41/CLD42 Series Silicon Planar Photodiodes 1r— 0.025 r*“ F e atu res C0.64J A b s o lu te M a x im u m R atin g s *1* T a = 25°C unless otherwise stated. Storage Temperature. -40°Ct0 +150,C

sCapacitor

Abstract: DELTA MODULATION ENCODER BS9450
Contextual Info: M X-CÔM INC 37E ]> • SbbOfil? 00012SS MX* QDAA, INC. pM 7 MflXC MX629 ß a ty 'r J ß y ä ffl MILITARY DELTA MODULATION CODEC FEATURES APPLICATIONS • • • • • • • Military Communications • Multiplexers, Switches & Phones MeetsMil-Std-188-113

Contextual Info: 10 Watt NT Series Featu res • Fully Self Contained, No External Parts Required for Operation ■ High Power Density, up to 11 Watts per Cubic Inch ■ Low and Specified Input/Output Capacitance ■ Efficiencies to 85% ■ Overcurrent Protected for Long, Reliable Operation

TME 57

Abstract: D02S D012 D031 EDI8M3264C
Contextual Info: ELECTRONIC DESIGNS I NC S1E D 32301m ü0012Sfa S7b B E L D ^ED I EDI8M3264C Electronic Design» tnc.a High Speed Two Megabit SRAM Module 64Kx32 Static RAM CMOS, High Speed Module T -V i6 - 2 3 -JY Features The EDI8M3264Cis a high speed 2megabit State RAM 64Kx32 bit CMOS Static

melec 1200

Abstract: LZ1232M lz1232 Quad TTL to MOS Driver
Contextual Info: SHARP E L E K / M ELEC D IV 15E 0 | a ü ü l ^ 4 ci 0 | 32-Unit High Voltage MOS 1C LZ1232M T -5 2 -1 3 -0 5 LZ1232M • 32-Unit High Voltage MOS IC Pin Cnnections Description The LZ1232M is a 32-unit high voltage MOS IC fabricated using an N-channel DSA MOS process.

Contextual Info: FASCO INDS/ SENISYS 4 DE J> 34=1=1733 000155 b 3 SH SEN I ijjQ S I I CLD40 ru t* Silicon Planar Photodiode i DIMENSIONS ARE IN INCHES [M ILLIM ET ER S Features Absolute Maximum Ratings^1* Ta = 25°C unless otherwise stated.) • • • • • Storage +8S°C

Contextual Info: WSS 53223 SOLID-STATE RELAY SQUIB FIRING RELAY mM M M M M FEATURES • • • • • • Replaces Teledyne M33-2N Magnetic Coupling Fast Turn on Times 1000 VRMS Isolation Excellent Parametric Stability Power FET Output - Low On-state Resistance Load Current Pulses up to 100A

AK8406

Abstract: tri linear CCD signal detection circuit "peak hold" constant vol slo syn HS 50
Contextual Info: [AK8406] ASAHI KASEI □ Input signal level: 250mVp-p~l. 15Yp-p □Processing speed : 5M sample/sec □Max. sensor length : 8184 □Sample hold and clump circuit included □8 bit 2step flash ADC included •Contrast adjustment possible by 2x4bit DAC,which are volumesfor black reference

daic0

Contextual Info: RF2 . I '• © © T RF COMM , -QNB- © © © RF3 -GND- © © © 500 ¿ \ 50ft m S @ © -4 - -4 - DS0404 SP4T © À¿ \ À¿ \ ” ¿ \ ‘ ^ m son 1 0 ® 1 • Built-in TTL compatible driver • Unused ports terminated in 5Q ohms I I © -GND — 1 "1"

S18A

Contextual Info: 2N7218 2N7219 2N7221 2N7222 POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, N-Channel Enhancement Mode, MOSFET Power Transistor FEATURES • Isolated Hermetic Metal Package • Fast Switching • Low RDS on • Ceramic Feedthroughs Available

Contextual Info: SbE J> Dû7flti3b 0 0 0 1 2 5 1 öbD « A M T O P E Xs APEX M I C R 0 T E C H N 0 L 0 6 Y CORP 2 2 .5 W A TT D C -D C C O N VER TER DB2815S • DB2815SA A P EX M ICRO TECH N O LO G Y CO RPORATION • TU CSO N . ARIZONA » A P P LIC A TIO N S HO TLIN E 80 0 4 2 1 -1 8 6 5

Contextual Info: PERFORMANCE SE MI CONDUCTOR 20E D 70^25^7 000124b 7 P3C3198/P3C3198L SUPER FAST 16K X 4 STATIC CMOS RAMS SCRAMS 7$ FEATURES • Full CMOS, 6T Cell ■ Output Enable and Chip Enable Control Functions ■ Single 3.3V ± 0.2V Power Supply for High Speed with Low Noise and Low Power Dissipation

STM CL-70

Abstract: DI-149 ic laf 0001 laf 0001 equal A23 1101 01A laf 0001 power LD SOT 423 STS SOT t04 sot 23 U802A
Contextual Info: SOT-3 Device STM-1/STS-3/STS-3c Overhead Terminator TXC-03003B DATA SHEET Product Preview DESCRIPTION = The SOT-3 SDH/SONET overhead terminator is a pro­ grammable device that performs section, line and path overhead processing for STM-1/STS-3/STS-3c signals.

Contextual Info: NN51V4400B series Fast Page Mode CMOS 1M x4b it Dynamic RAM DESCRIPTION The NN51V4400B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 4 bit. The NN51V4400B series is fabricated with advanced C M OS technology and designed with innovative de­

BL 176A

Contextual Info: ATMEL CORP HTE D • 1074177 0QD124S 0 ■ A T76C 176A T -S 2-& -& FEATURES • • • • • • • • Personal System/2*, 8514A, and VGA* Compatible High Pixel Rates to 110 MHz Supports High Resolution 1280 x 1280 Pixels Color Graphics Displays Low Standby Current Less than 100/<A PLCC Packages Only

Contextual Info: [AK8406] ASAHI KASEI □ Input signal level: 250mVp-p~l. 15Yp-p □Processing speed : 5M sample/sec □Max. sensor length : 8184 □Sample hold and clump circuit included □8bit 2step flash ADC included •Contrast adjustment possible by 2x4bit DAC,which are volumesfor black reference

Oak Technology

Abstract: PC111
Contextual Info: CHAPTER 10 ELECTRICAL DATA 10.1 D C SPECIFICATIONS 10.1.1 TA = 0° CTO 70° C, VDD = 5V +/- 5%, VSS = 0V Symbol Parameter Min Max Unit Condition V Ioh = 400 uA Voh Output High Voltage Voi Output Low Voltage 0.4 V lol = 24 mA 1,2 Vol Output Low Voltage 0.4

Contextual Info: [AK6480H] ASAHI KASEI A K 6 4 8 OH Wide Vcc 2.5V ~ 5.5V 8192bit Serial Electrically Erasable PROM Features □ ADVANCED CMOS E2PROM TECHNOLOGY □ READ/WRITE NON-VOLATILE MEMORY - Wide Vcc (25V ~ 5.5V) operation - 8192 bits: 512 X 16 organization □ ONE CHIP MICROCOMPUTER INTERFACE