ZTX655 Search Results

FXT655

Abstract: ZTX655
Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT655 ISSUE 1 – FEB 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX655 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

ZTX654

Abstract: ZTX655 DSA003771
Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX654 ZTX655 ISSUE 2 – JULY 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt TYPICAL CHARACTERISTICS 0.18 hFE - Normalised Gain % VCE(sat) - (Volts) 100 IC/IB=10

MPSA42

Abstract: MPSA43 ZTX341 ZTX342 ZTX454 ZTX455 ZTX654 ZTX655 ZTX656 ZTX657
Contextual Info: SEMICONDUCTOR DICE NPN HIGH VOLTAGE Min. Min. Max. at V CB Volts Volts ZTX657 M PSA42 ZTX656 M PSA43 ZTX655 ZTX455 ZTX454 ZTX654 ZTX342 ZTX341 h FE ICBO V CBO V CEO Dice type 300 300 200 200 150 16 0 140 125 120 10 0 300 300 200 200 150 14 0 120 125 120 100

ZTX654

Contextual Info: ZTX654 Not Recommended for New Design Please Use ZTX655 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX654 ZTX655 ISSUE 2 – JULY 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt TYPICAL CHARACTERISTICS 0.18 hFE - Normalised Gain %

Contextual Info: DISCONTINUED NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT655 ISSUE 1 – FEB 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX655 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX654 ZTX655 ISSUE 2 - J U L Y 94 FEATURES * A 150 Volt V CE0 * 1 A m p continuous current * Low saturation voltage * Ptot= 1 W att hA J / m be E-Line T 09 2 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX654 ZTX655 / ISSUE 2 - J U L Y 94 FEATURES * 150 V o lt V CEQ * 1 A m p c o n tin u o u s c u rre n t * L o w s a tu ra tio n v o lta g e * Ptot= 1 W a tt E -Line T 0 9 2 Com patible ABSOLUTE MAXIMUM RATINGS.

Se136

Abstract: Se133 SE135 ZTX654 se134
Contextual Info: NPN Silicon Planar Medium Power High Voltage Transistors ZTX 654 ZTX655 FEATURES • • • • • • 1.5 W power dissipation at Tamb = 2 5 ° C * 1A continuous lc Guaranteed hFE specified up to 1A Voltages up to 15 0 V Low saturation voltages Complementary types

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR _ ISSUE 1 - FEB 94 FEATURES * 150 Volt V CE0 * 1 A m p continuous current * Low saturation voltage * Ptot= 1 W a t t REFER TO ZTX655 FOR G R A P H S ABSOLUTE M A XIM U M RATINGS. PARAMETER SY M B O L

Contextual Info: S EM IC O N D U C TO R DICE NPN HIGH VOLTAGE hFE at 'CBO V CBO VcEO Dice type Min. Min. Max. at VCB ZTX657 MPSA42 ZTX656 MPSA43 ZTX655 ZTX455 ZTX454 ZTX654 ZTX342 ZTX341 Volts Min. Max. Volts Volts nA 300 300 200 200 150 160 140 125 120 100 100 200 100 200

Contextual Info: ZTX655M1 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: ZTX655 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: ZETEX SEM ICONDU CTOR S IbE D • c^70S7fl 000bfl7fl b ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS \ ' Z c\-2-3> NPN HIGH VOLTAGE Dice type VCBO Min VCEO Min Volts Volts •cBO , Max a t VCB nA Volts at M ilt Max v« mA V o lt* V easw ■ at lc

ZTX451M1

Abstract: ZTX649M1 ZTX651M1 ZTX653M1 ZTX655M1 ZTX657M1 ZTX749M1 ZTX751M1 ZTX753M1 ZTX755M1
Contextual Info: bOE D 4 • WD57Û 0007b63 ßb5 ■ Z E T B CENTRE BASE E-LINE 'M 1' ZETEX SEMI CONDUCTORS E-LINE " M 1 " SPECIFICATIONS BIPOLAR Super E-line M l Transistors Max. Cont. Max. Type V at Min. f T at •c •c hFE ' cm V CB0 VcEO V Max. VC£(satl at mA A V •b

ZVN2106AM

Abstract: ZVP2106AM1 ZTX753M1 ZTX751M1 ZVP0535AM1 ZTX449 42-06A ZTX653M
Contextual Info: 03 PLESSEY SENI C O N D / D I SC R E T E D E I 7 2 5 0 5 3 3 0 0 0 b 7 fl0 S I ~ E-LIN E''M l' 1 The package that offers you more POWER and PERFORMANCE to meet your Surface Mount Requirements. The range of E-Line M1 products has been specially selected to meet current and future design requirements

Contextual Info: TS PLESSEY SENI C O N D / D I SC R E T E 7220533 PLESSEY F Ë Ï 7E50533 000SD7M 7 95D 0 5 0 7 4 SEMICOND/ D IS CRE TE Super E-line transistors TABLE 4 : NPN/PNP HIGH VOLTAGE TRANSISTORS The transistors shown in this table are designed for driving numerical indicator tubes, neon lamps

MPSA42

Abstract: MPSA43 ZTX342 ZTX454 ZTX455 ZTX654 ZTX655 ZTX656 ZTX657
Contextual Info: SLE D • T c17057fl D 0 G 7 D S 1 fibT ■ Z E T B SEMICONDUCTOR DICE ZETEX S E M I C O N D U C T O R S NPN HIGH VOLTAGE V CBO V CEO 300 300 200 200 150 160 140 125 120 100 300 300 200 200 150 140 120 125 120 100 Volts Min. Max. 100 100 100 100 100 100 100

ZTX458

Abstract: BF493 BF392 BF393 MPSA92 ZTX558 ZTX658 ZTX757 ZTX758 2N5401 BF391
Contextual Info: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The tra n s is to rs s h o w n in th is ta b le are designed fo r d rivin g num erical in d ica to r tu b es, neon lam ps and o th e r a p p lica tio n s requiring high vo lta g e ca p a b ility. V cbo M ax ICBO

BF493

Abstract: ZTX338 MPSA06 ZTX451 ZTX452 ZTX454 ZTX551 ZTX552 ZTX553 ZTX554
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 ° C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay S w itching, etc.

2TX650

Abstract: zetex transistors TO92 BF493 ZTX458 ZTX558 ZTX758 BF392 BF393 MPSA92 ZTX658
Contextual Info: SbE » • ^70570 DGDb^M2 GTfl H Z E T B T -'Z /l-O l TABLE 13 : NPIU/PNP HIGH VOLTAGE TRANSISTORS The transistors shown in this table are designed for driving numerical indicator tubes, neon lamps and other applications requiring high voltage capability.

ZT Ferranti

Abstract: BF4935P SE-169 TX-550 X752 X449
Contextual Info: ZETEX S E M I C O N D U C T O R S =IS]> D • clci7 Q S 78 0 0 0 S 0 7 S 1 M Z E T B ~T-Tl-Ol Super E-line transistors TABLE 1 : NPN/PNP SUPER E-LINE These devices offer the ultimate performance for TQ-92 style package, they have been designed to operate and provide useful gain at current

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request

TIP290

Abstract: 2N4001 diode MJ029C 2SC1624Y TIP-290 2N2202 BDY66 2SC16250 2N2204 TO-202AC
Contextual Info: POWER SILICON NPN Item Number Part Number I e 5 10 15 20 >= 30 BC618l 2N2405 2N2405S 2N2405S oTl1634 2N2611 SSP58C MJ029C b!F~f~4 35 40 BD400 2N2201 2N2202 2N2203 2N2204 2N2988 2N2992 2N2472 ~~~:~~ 45 50 2N2995 STll0 STll05 SVT100-5 DTl1654 2N5681 2N4001

ztx1056a

Contextual Info: Section 2: Bipolar Transistors _ High Voltage T ransistors I 0 0 to BO O V o its E-Line NPIM High V o ltage {Vceo up to 400V T ra n s is to rs Pinout Details: 1-Collector, 2-Base, 3-Emitter V CBO V CEO hFE lc Type VcE sat)