Z1 TRANSISTOR Search Results

VT6Z1

Contextual Info: Power management dual transistors VT6Z1 (5) (4) 0 ~ 0.05 0.14 (1) (2) (3) 0.16 ± 0.05 0.13 ± 0.05 0.4 0.4 0.8 ± 0.1 zApplications Switch, LED driver Abbreviated symbol : Z1 UNIT : mm Each lead has same dimensions. zPackaging specifications Package Type

2Sc2486

Abstract: 2SA1062
Contextual Info: PANASONIC INDL/ELEK -CIO 1EE 1 • bTBSÛSS QQ104S1 T ■ Silicon Epitaxal Base ' lesa Transistor T-33-Z1 r 33 3 2SA1062 PNP) 2SC2486(NPN) TOP-3 Package (See Page 36 For Dimensions)_ 2SA1062 (PNPÌ Absolute Maximum Ratings (Ta=25°C) Item

BDT96

Contextual Info: BDT92 BDT94 BDT96 PHILIPS INTERNATIONAL SbE D • 7110fi2b 0043332 447 ■ P H I N T-3J-Z1 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications.

Contextual Info: Z1 Am79M570/Am79M574 Advanced Micro Devices Metering Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Programmable constant resistance feed Supports 2.2-V RMS metering 12 and 16 kHz ■ On-chip switching regulator for low-power dissipation

p844m

Abstract: p845 P843M MP844 D 843 Transistor "micro power systems" mp845 MP843 dual fet L6
Contextual Info: aGE D • b 017 4 4.4 00033=10 5 I MICRO POWER SYSTEMS E /y i INC M P 843 MICRO POW ER SY ST EM S M P 844 M P 845 T'29'Z1 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL SILICON NITROX FIELD EFFECT TRANSISTORS DIFFUSED ISOLATED . en = 8nV/vr H T TYP.

IC built-in 2-phase FAN motor

Abstract: LB1668 CMD1667M CMD1668M LB1668M BRUSHLESS MOTOR
Contextual Info: CMD1668M,CMD1667M Two-Phase Unipolar Drive Brushless Motor Drivers Package Dimensions 8 14 4.4 Functions and Features 1 7 0.15 1.5 8.0 0.1 • Output protection Zener diodes with variable breakdown voltages — When the Z1 and Z2 pins are open: VOLM = 57 V

marking Z1 6pin

Abstract: UMZ1N F MARKING 6PIN marking Z1 6-pin
Contextual Info: UMZ1N IMZ1A Transistor, dual, NPN and PNP Features Dimensions U n its: mm • available in UMT6 (UM6) and SMT6 (IMD, SC-74) packages • package marking: UMZ1N and IMZ1A; Z1 • UMZ1N (UMT6) z .oto. z Fi^vl 0 65 I I 0.65 T t( 2r) r r un a n r package contains a PNP

00-VREF

Abstract: QDC-2
Contextual Info: Wfw\ HEW LETT mZEM PACKARD HP1Q Z1 D ual 5-bit F lash Analog-toD igital C onverter Preliminary G eneral D escription The HP 1QZ1 Dual 5-bit Flash Analog-to-Digital Converter implements two high-speed flash analog-to-digital convert­ ers ADCs on a single mono­

vr1 500

Abstract: tlp127 equivalent MT91634 tlp127 application notes met 0231 MT91633 zarlink daa modem MH80632AB-R1 MT91633AS MT91634AQ
Contextual Info: MT91633/4 Silicon COIC/DAA Chipset Preliminary Information Features • • • • • • • • • • • • DS5372 May 2001 Ordering Information MT91633AS 16 pin SOIC MT91634AQ 36 pin QSOP MH80632AB-R1 20 pin BGA MH80632AB-Z1 20 pin BGA -40°C to 85°C

tlp127 equivalent

Abstract: tlp127 application notes MT91634 440K MT91633 MH80632AB-R1 MT91633AS MT91634AQ
Contextual Info: MT91633/4 Silicon COIC/DAA Chipset Preliminary Information Features • • • • • • • • • • • • DS5372 May 2001 Ordering Information MT91633AS 16 pin SOIC MT91634AQ 36 pin QSOP MH80632AB-R1 20 pin BGA MH80632AB-Z1 20 pin BGA -40°C to 85°C

FDC653N

Abstract: LTC3532 LTC4215 LTC4260 MS10 SA14A Signal Path Designer
Contextual Info: L DESIGN FEATURES Hot Swap Controller Monitors and Reports Power Supply Status by Josh Simonson Z1 SA14A CONNECTOR 1 High availability systems are designed to achieve an ideal of zero down time. To approach this goal, the system needs to be able to operate during routine maintenance and upgrades, which

Contextual Info: MT91633/4 Silicon COIC/DAA Chipset Preliminary Information Features ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ DS5372 May 2001 Ordering Information MT91633AS 16 pin SOIC MT91634AQ 36 pin QSOP MH80632AB-R1 20 pin BGA MH80632AB-Z1 20 pin BGA -40°C to 85°C Voice and data quality

2SC1622A

Contextual Info: NEC j > IJ Z1 > h- =7 > 9 S ilic o n T ra n s is to r 2SC1622A N P N i k ^ + v ' / ’VUJfc '> U NPN Silicon Epitaxial Transistor Audio Frequency High Gain Amplifier H&m / P A C K A G E ^/FEA TU RES » S'J 7"') DIMENSIONS KICffl t U f t i t t o U n it : mm)

Contextual Info: 10 MHz, Four-Quadrant Multiplier/Divider AD734 FUNCTIONAL BLOCK DIAGRAM FEATURES AD734 X1 X = X1 – X2 XIF X2 HIGH ACCURACY TRANSLINEAR CORE DD DENOMINATOR CONTROL U U0 U1 XZ U XY ÷ U – Z + WIF W – ∞ AO ER RU U2 Y1 YIF Y = Y1 – Y 2 Z = Z1 – Z2

xps-CM

Abstract: telemecanique D range contactors Telemecanique XVB C 21 telemecanique limit switch Telemecanique VO relay safety telemecanique manual telemecanique contactors Y33-Y34 S18PP340 telemecanique hand switch
Contextual Info: Telemecanique XPS-CM U+ U– A1 UV Y4 Y5 Y33 Y3 Z1 Z3 H1 T1 13 23 Y1 Y2 VE NT TY PE Muting Start Y4 34 2 UV Y64 Y54U– 4U+ Muting 1 Start N TA XP S - Y33 13 23 Y1 Y2 UV H1 2 CM + 4 Y34 Y4 14 24 4 Y54 Y6 4 4 Y54 Y6 4 se ed requir /A2-Fu 1 – A1 command -24 closed

transistor z3

Abstract: TRANSISTOR Z4
Contextual Info: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz • 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-max

transistor C4

Contextual Info: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz • 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-Max

TRANSISTOR Z4

Abstract: transistor Z2 transistor r47 transistor 1608 transistor z5 transistor z4 n transistor z4 51 transistor z3 rt230pd IRF 1470
Contextual Info: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz • 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-Max

FPD1500

Abstract: SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD1500DFN FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE
Contextual Info: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a

Contextual Info: MC10192 Quad Bus Driver The MC10192 contains four line drivers with complementary outputs. Each driver has a Data D input and shares an Enable (E) input with another driver. The two driver outputs are the uncommitted collectors of a pair of NPN transistors operating as a current switch.

AVX 6295

Abstract: 239 avx ML200C A113 A114 A115 AN1955 MMG3003NT1 A 118827 0805K680JBT
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MMG3003NT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 2, 5/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad

ML200C

Abstract: TRANSISTOR Z4 135-869 DB21 A113 A114 A115 AN1955 C0603C103J5RAC C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 6, 7/2007 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad

transistor z9

Abstract: transistor Z2 RT240PD cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF
Contextual Info: Preliminary 10W Power Transistor RT240PD Product Features Application • High Output Power P1dB = 40dBm Typ. @2.14GHz • High Efficiency • High Power Gain G1dB = 17dB(Typ.)@900MHz G1dB = 13dB(Typ.)@2.14GHz • High Linearity • Hermetically sealed package