UMZ1N Search Results

Contextual Info: EMZ1 / UMZ1N / IMZ1A Transistors General purpose transistor dual transistors EMZ1 / UMZ1N / IMZ1A zExternal dimensions (Unit : mm) zFeatures 1) Both a 2SA1037AK chip and 2SC241ZK chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3

Contextual Info: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com Features • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A

Contextual Info: UMZ1N 0.15 W, ±150 mA, ±60 V Silicon Epitaxial Planar Power Management Dual Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z 2SA1037AK and 2SC2412K are housed independently in a package.

IMZ1A rohm

Abstract: 2SA1037AK 2SC241ZK T108 EMZ1 "dual TRANSISTORs" pnp npn
Contextual Info: EMZ1 / UMZ1N / IMZ1A Transistors General purpose transistor dual transistors EMZ1 / UMZ1N / IMZ1A zExternal dimensions (Unit : mm) zFeatures 1) Both a 2SA1037AK chip and 2SC241ZK chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3

UMZ1N

Abstract: "dual TRANSISTORs" 2SA1037AK 2SC2412K
Contextual Info: UMZ1N 0.15 W, ±150 mA, ±60 V Silicon Epitaxial Planar Power Management Dual Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES A E L 2SA1037AK and 2SC2412K are housed independently in a package.

Contextual Info: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A

PNP,494

Contextual Info: UMZ1N/IMZ1A h 7 > v 7s $ / I ransistors 7 U M Z 1 N . _ /f V l / - T 7 K ^ — J i' K x / S ' < i 7s Isolated Mini-Mold Device IP flZ 1 A — / Gener al Small Signal Amp. • i't-ff^ iiE I/'D im e n s io n s U n it: mm 1) UMT (SC-70), SM T (SC-59) ¿ Is ] —

SMD310

Contextual Info: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200~400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A

common emitter amplifier

Abstract: common collector amplifier circuit designing general purpose complementary transistors high voltage pnp npn transistors,pnp transistors 187 transistor npn 208 SOT-363 common base amplifier circuit common emitter amplifier circuit designing NPN/TRANSISTOR 187
Contextual Info: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com Features •ăHigh Voltage and High Current: VCEO = 50 V, IC = 200 mA •ăHigh hFE: hFE = 200X400 •ăMoisture Sensitivity Level: 1 •ăESD Rating - Human Body Model: 3A

DUAL TRANSISTOR

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UMZ1N Preliminary DUAL TRANSISTOR GENERAL PURPOSE TRANSISTOR  DESCRIPTION The UTC UMZ1N is a dual transistor, including an NPN transistor and a PNP transistor. It uses UTC’s advanced technology to provide customers with high DC current gain, etc.

SOT-363 marking z1

Abstract: marking Z1 z1 sot363
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# UMZ1N Features x x x 2SA1037AK and 2SC2412K are housed independently in a package. Mounting cost and area can be cut in half.

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components UMZ1N Features • x x x • • • Halogen free available upon request by adding suffix "-HF" 2SA1037AK and 2SC2412K are housed independently in a package.

"dual TRANSISTORs" pnp npn

Abstract: BC847CPDW1T1 dual pnp BC858CDW1T1
Contextual Info: Bipolar Transistors General−Purpose Multiple Transistors Device BC846BDW1T1 BC856BDW1T1 BC846BPDW1T1 BC847BDW1T1 BC847CDW1T1 BC857BDW1T1 BC857CDW1T1 BC847BPDW1T1 BC847CPDW1T1 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT2222ADW1T1 MBT6429DW1T1 UMZ1NT1 BC848CDW1T1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Power management Dual-transistors UMZ1N TRANSISTOR SOT-363 DESCRIPTION Silicon epitaxial planar transistor FEATURES 2SA1037AK and 2SC2412K are housed independently in a package. z Transistor elements independent, eliminating interference.

transistor

Abstract: Transistors General 2SC241ZK transistors transistor 571 Silicon General NPN/PNP transistor CHIP TRANSISTOR pnp and npn pdf of transistors npn pnp
Contextual Info: Transistors General purpose transistor dual transistors UMZ1N / IMZ1A FFeatures 1) Both a 2SA1037AK chip and 2SC241ZK chip in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference.

UMZ1N

Abstract: 7915 BJT BF 167
Contextual Info: SPICE PARAMETER UMZ1N * UMZ1N_NPN BJT model * Date: 2006/11/30 .MODEL UMZ1N_NPN NPN + IS=70.000E-15 + BF=277.08 + VAF=114.03 + IKF=1 + ISE=70.000E-15 + NE=1.8934 + BR=11.565 + VAR=100 + IKR=.11266 + ISC=1.0228E-12 + NC=1.3260 + NK=.71869 + RE=.2 + RB=13.897

Contextual Info: UMZ1N UMZ1N SOT-363 Multi-Chip TRANSISTOR NPN/PNP FEATURES Power dissipation PCM: 150 mW (Tamb=25℃) Collector current ICM: 150/-150 mA Collector-base voltage 60/-60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

419B-02

Abstract: SMD310
Contextual Info: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A

Contextual Info: Transistors General Purpose Transistor Isolated Dual Transistors UMZ1N/ IMZ1A •F e a tu re s 1) B o th • E x te r n a l dim ensions (Units: mm ) 2SA1037AK c h ip and 2 S C 2 4 1 Z K chip in U M T a n d S M T IMZ1A UMZ1N 2.0 ± 0.2 2) 0 .9 ± 0 .1 1 .9 ± 0 .2

Contextual Info: UMZ1NT1G Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com Features • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A

SOT-363 marking z1

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# UMZ1N Features x x x • • • 2SA1037AK and 2SC2412K are housed independently in a package. Mounting cost and area can be cut in half.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors UMZ1N SOT-363 Multi-Chip TRANSISTOR NPN/PNP FEATURES Power dissipation PCM: 150 mW (Tamb=25℃) Collector current 150/-150 mA ICM: Collector-base voltage 60/-60 V

Contextual Info: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A

SMD310

Abstract: SC-88 package
Contextual Info: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A