YUNDAI Search Results

A109D

Abstract: max3843 lcd hyundai WWD 3P hyundai hy 555
Contextual Info: HY51V17400B Series •YUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY 51V17400B utilizes H yundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: "V Y U l i n A l m H Y 5 1 1 6 4 0 4 A S e r ie s i u n u i t l 4 M x 4 . b¡t C M 0S DRAM with Extended Data out DESCRIPTION The HY5116404A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY5116404A utilizes H yundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: • HSEMICONDUCTOR YUNDAI HYM540400 Series 4M X 40-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM540400 is a 4M x 40-bit Fast page mode C M O S DRAM module consisting of ten HY5116400 in 24/28 pin SO J or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.22/j F decoupling capacitor is mounted for each

iA17

Contextual Info: HY62V8400 Series •H YUNDAI 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62V8400 is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using yundai’s high perfromance twin tub CMOS process technology. The HY62V8400 has a data retention mode that

NCC 5551

Abstract: SS LSE 0530 HY6264AL ZT 5551 y626
Contextual Info: HY6264A-I Series •YUNDAI 8K X CMOS SRAM 8 -b it DESCRIPTION The H Y 6 26 4A -I is a high-speed, low power and 8,192 x 8-bits C M O S static R A M fabricated using H yundai's high performance twin tub C M O S pro cess technology. This high reliability pro cess coupled with innovative circuit

M6312

Contextual Info: PRELIMINARY ••H YUNDAI SEMICONDUCTOR HY234001 “ rom M631200A-MAY92 FEATURES DESCRIPTION The HY234001 is mask-programmable ROM organized as 524,288 words by 8 bits. It is fabricated using YUNDAI’S CMOS pro­ cess technology. The HY234001 operates with

Contextual Info: HSEMICONDUCTOR YUNDAI HY62V256 Series 32Kx 8-bit CMOS SRAM DESCRIPTION The HY62V256 is a 262,144 bit high-speed Static RAM organized as 32,768 x 8-bits. The device is fabricated using yundai's advanced CMOS process and high-speed circuit technology. The HY62V256 has an output enable

HY5116100B

Abstract: 1AD41-00-MAY95 HY5116100
Contextual Info: ' • H Y U N D A H Y 5 1 1 6 1 0 0 B S e r ie s 16Mx 1-bit CMOS DRAM I DESCRIPTION The H Y 5116100B is the new generation and fast dynam ic R A M organized 16,777,216 x 1-bit. T h e H Y 5 1 1 6 1 0 0 B utilizes H yundai’s C M O S silicon gate process technology a s well a s advanced circuit techniques to provide w ide

534256

Abstract: IRC20
Contextual Info: yundai electronics 51E » Mb750ûfi Q G O O b b B 500 • H Y N K T - 4 ^ 3 - •HYUNDA i 7 HY534256 SEMICONDUCTOI 2-«.k l-liii I M ds | K\M M 1 8 1 2 0 2 B -JA N 9 2 DESCRIPTION The HY534256 is a high speed, low power 262,144 X4 bit CMOS dynamic random access

HYM532100AMG

Abstract: MCS28 HYM532100A hym532100AM
Contextual Info: • HSEMICONDUCTOR YUNDAI H Y M 5 3 2 1 0 0 A S e r ie s 1M x 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.

HY51V16404B

Abstract: WP4L CA3C1
Contextual Info: 1 YUNDAI 4 M x 4 _bjt HY51V16404B Series CMos DRAM with Extended Data Out D E S C R IP T IO N The HY51V16404B is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY51V16404B utilizes yundai's CM OS silicon gate process technology as advanced circuit techniques to provide wide operating

TAA201

Abstract: HY534256
Contextual Info: yundai e l e c t r o n ic s 51E » M b750ûfi QGOObbB 5 0 0 • H Y N K T - 4 ^ 3 - •HYUNDA i 7 HY534256 SEMICONDUCTOI 2-«.k l-liii I Mds | K\M M 1 8 1 2 0 2 B -JA N 9 2 DESCRIPTION The HY534256 is a high speed, low power 262,144 X4 bit CMOS dynamic random access

PACKAGE-600MIL

Abstract: 8KX8-Bit CMOS SRAM 192x8
Contextual Info: YUNDAI ELECTRONICS sie t> m a s o f i a 0001157 bse h h y n k •H yundai SEMICONDUCTOR HY6264A 8KX8-Bit C M O S SRAM M261201B-MAY92 DESCRIPTION FEATURES The HY6264A is a high speed, low power 8,192 words by 8-bit CMOS, static RAM fabrica­ ted using a twin tub CMOS process technolo­

Contextual Info: • { H Y U N D A HY62V256 Series I 32K X 8-bit CMOS SRAM DESCRIPTION The HV62V256 is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using yundai’s high performance twin tub CMOS process technology. The HY62V256 has a data retention mode that guarantees

Contextual Info: •YUNDAI H Y 5 1 V 1 8 1 6 4 B ,H Y 5 1 V 1 6 1 6 4 B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process

Contextual Info: •YUNDAI H Y 5 1 17 8 0 4 B ,H Y 5 1 16 8 0 4 B 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

Contextual Info: YUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22p.F decoupling capacitor is mounted for

HY514264

Contextual Info: •YUNDAI HY514264B 256Kx16, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time 50, 60

Contextual Info: ^YUNDAI HYM564224A R-Series Unbuffered 2M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM564224A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY5118164B in 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 ¡aF and

Contextual Info: •YUNDAI H Y 5 1 V 1 7 4 0 4 B ,H Y 5 1 V 1 6 4 0 4 B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

Contextual Info: HY62256B-I Series “H Y U N D A I 32Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62256B-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using yundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

Contextual Info: HY51V16100B Series -YUNDAI 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100B is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V16100B utilizes yundai's CMOS silicon gate process technology as well as advanced circuit techniques

HYM532414

Abstract: HY5117404
Contextual Info: •HYUN D AI HYM532414 N-Series 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414 is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted

HY57V168

Abstract: hy57v168010 1sd31 66MHz
Contextual Info: - H Y U N D A I > -• H Y 5 7 V 1 6 8 0 1 0 C 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The yundai H Y57V 168010C is a 1 6 ,7 7 7 , 216-bits C M OS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. H Y 57V 168010C is organized as 2banks of