MB750 Search Results

HYM581000M

Contextual Info: HYUNDAI ELECTRONICS SIE Mb750flß □ □ □ □ T I S IHYNK 2TG HYM581000 •Ï2YUNDA SEMICONDUCTO D . im 4L-. -. 1\ I X 8-Bit C M O s DRAM MODI 1.1 M431201B-OCT91 DESCRIPTION The HYM581000M is a 1M words by 8bits dynamic RAM module and consists o f eight

534256

Abstract: IRC20
Contextual Info: yundai electronics 51E » Mb750ûfi Q G O O b b B 500 • H Y N K T - 4 ^ 3 - •HYUNDA i 7 HY534256 SEMICONDUCTOI 2-«.k l-liii I M ds | K\M M 1 8 1 2 0 2 B -JA N 9 2 DESCRIPTION The HY534256 is a high speed, low power 262,144 X4 bit CMOS dynamic random access

Contextual Info: HY514100B Series •HYUNDAI 4M X 1-bit CMOS DRAM DESCRIPTION The HY514100B is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HY5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: • { H Y U N D A HY62V256 Series I 32K X 8-bit CMOS SRAM DESCRIPTION The HV62V256 is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. The HY62V256 has a data retention mode that guarantees

Contextual Info: «HYUNDAI H Y 5 1 1 7 1 O O A S e r ie s 1 6 M x 1 - b it CM O S DRAM DESCRIPTION The HY5117100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HYUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22p.F decoupling capacitor is mounted for

Contextual Info: •HYUNDAI H Y SEMICONDUCTOR 514100A S e rie s 4M x 1-bit CMOS DRAM DESCRIPTION The HY514100A is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HV514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: H Y 5 1 1 6 1 O O A •HYUNDAI S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY51161 OOA is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51161 OOA utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: ^HYUNDAI HYM564224A R-Series Unbuffered 2M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM564224A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY5118164B in 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 ¡aF and

Contextual Info: » « H Y U N D A I e r ie s 1M x 4H_bŸjt 5C1M40 S4 0D R3 ABM Sw ,th 4C A S PRELIMINARY DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CSSO controls DQO,

Contextual Info: HY62256B-I Series “H Y U N D A I 32Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62256B-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

Contextual Info: "HYUNDAI HYM532220A W-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mourtted for

Contextual Info: •HYUNDAI H Y 6 7 V 1 8 1 0 0 /1 0 1 64K X 18 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64K x18 SRAM core, address registers, data input registers, a 2-bit burst ad­ dress counter and pipelined output. All synchronous inputs pass through registers controlled by a positiveedge triggered clock K .

Contextual Info: HY51V16100B Series -HYUNDAI 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100B is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V16100B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques

Contextual Info: H Y 5 1 4 4 0 0 S e r ie s 1 M x 4-bit C M O S D R A M • • H Y U N D A I DESCRIPTION Hie HY514400 is the new generation and fast dynamic RAM organized 1,048,576 x 4 bits. The HY514400 utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating

HY62256A

Abstract: hyundai HY62256AJ55
Contextual Info: HY62256A Series • H Y U N D A I 32Kx 8-bit CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

Contextual Info: u v H u n i a 8Mx8 bit Synchronous DRAM Series m /3 Y U N U A I HY57V648010/ HY57V648020/ HY57V658010/ HY57V658020 HY57V648011/ HY57V648021/ HY57V6S8011/ HY57V658021 PRELIMINARY DESCRIPTION HY57V648010 description and pinout, offering fully synchronous operation. All address, data and control inputs are

LD33

Abstract: ld33 c LD33 F LD33 V HY6264ALP70 LD33 e LD33 voltage 1DB01 HY6264ALJ-70 Hy6264alp-70
Contextual Info: HY6264A Series ‘H YU N D AI 8 K x 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits C M O S static R A M fabricated using Hyundai's high performance twin tub C M O S process technology. This high reliability process coupled with innovative circuit

HYM5V64414

Abstract: HV51V17404A HYM5V64414AC
Contextual Info: -HYUNDAI HYM5V64414A K-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE -with EXTENDED DATA OUT DESCRIPTION TheHYM5V64414A is a 4M x 64-bit EDO m ode CMOS DRAM mod ule consisting of sixteen HY51V17404A in 24/26

MB-7500

Abstract: 130 nm CMOS standard cell library ST
Contextual Info: Mrüll electronic June 1992 ASIC HI-REL DATA SHEET MB GATE ARRAY SERIES - 2\U2 METAL LAYERS MB 850 - MB 1300 - MB 2000 - MB 2700 - MB 3200 MB 4000 - MB 5000 - MB 6600 - MB 7500 FEATURES ADVANCED SILICON GATE CMOS PROCESS : - two metal level - 2 micron drawn channel length

Contextual Info: • • H Y U N D A I H Y M 5 9 4 0 0 0 B M -S e r ie s 4M * 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of two HY5117400 in 24/28 pin SOJ and one HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22jiF decoupling

Contextual Info: -HYUNDAI HYM536A814B M-Series 8M X 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM536A814B is a 8M x 36-bit EDO mode CMOS DRAM module consisting of eighteen HY5117404B in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 iiF and 0.01 nFdecoupling capacitors are mounted

Contextual Info: HY234000 Series -H Y U N D A I 512K X 8-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY234000 is a 4Mbit mask-programmable ROM organized as 524,288 x8bit. It is fabricated using HYUNDAI’S advanced CMOS process technology. The HY234000 operates with a 5V power supply and all inputs are i n ­