Y PARAMETERS OF TRANSISTORS Search Results

HALL EFFECT 21E

Abstract: thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG
Contextual Info: RF Transistors Data Book 1997 Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B Material

Contextual Info: TEXA S IN ST R -COPTOÏ bS D E ^ j f l T t . l 7 S L 0□ 3 b 744 8 9 6 1 7 2 6 TEXAS INSTR OPTO 62C r 36744 - j j - o ? TIP29, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F N-P-N SILICON POWER TRANSISTORS J U LY 1 9 68 - RE V ISE D OCTO BER 1 9 84 •

2N918 motorola

Abstract: 2N918 MHQ918 MHQ918H MHQ918HX MHQ918HXV MIL-STD-750 2072 14NB
Contextual Info: I MHQ918 MHQ918H MHQ918HX MHQ918HXV I I I I QUAD DUAL NPN HERMETIC HIGH FREQUENCY designed for low-level, Low Noise Figure fT= 850 Transistors IC Automatic applications. Product — to 2N918 Package — Compact Insertion for Hi-Rel See Tables MAXIMUM amplifier

c2689

Abstract: C2689 equivalent automotive ignition tip162 T1P160 equivalent to tip162
Contextual Info: TEXAS INSTR ÌOPTO> d ìT | 8961 72 6 TEXAS INSTR OPTO 003^.^30 62C 36938 TIPI 60, TIPI 61, TIPI 62 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V ISE D O C T O B E R 1 9 84 50 W at 100°C Case Temperature T-33-29 10 A Rated Continuous Collector Current

2N2150

Contextual Info: TYPES 2N2150, 2N2151 N-P-N TRIPLE-DIFFUSED PLANAR SILICON POWER TRANSISTORS 33 03 —I FOR POWER-AMPLIFIER AN D HIGH-SPEED-SWITCHING APPLICATIONS m C < 2 3 rr HI m W 2 - In 0 - 2 tf M m z m 3 P p 3 r • Dissipation Capability of 30 W at 40 V , Tc= 100°C

A05T

Abstract: AN211A AN215A AN721 MRF1550FT1 MRF1550T1 VK200
Contextual Info: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices

2N2988

Abstract: 2N2967 2N2987 2N2994 2N2989 2N2993 2N2991 EL 2n25 2N25 2N2990
Contextual Info: TYPES 2N2987 THRU 2N2994 N-P-N TRIPLE-DIFFUSED PLANAR SILICON POWER TRANSISTORS TYPES 2N2987 THRU 2N2994 BULLETIN NO. Dl-S 6810506 , DECEMBER HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS • 15 Watts at 100°C Case Temperature • Typ VcE tat of 0.2 V at 200 mA

6164

Abstract: sanyo timing controller ALP304 LV4126W SAF 3019 6642A
Contextual Info: Ordering numter:EN8104 LCD Module ALP304 p a lim Low-Temperature Polysilicon 2.8-inch TFT LCD Module i Overview This 2.8-inch LCD module is a full-color active matrix module that uses low-temperature polysilicon thin-film transistors and includes built-in driver circuits for thinframe mounting. The high-resolution and RGB delta dot

MRF1550N

Abstract: MRF1550N UHF MRF1550 zener diode 82 b3 A05T A113 AN211A AN215A AN721 MRF1550FNT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1550N Rev. 11, 9/2006 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices

ALP208

Abstract: sanyo lcd alp208 LV4126W
Contextual Info: Ordering numb»r:EN6162 LCD Modulo ALP208 S A ß ro Low-Temperature Polysilicon 1.8-inch TFT LCD Module i Overview This 1.8-inch LCD module is a full-color active matrix module that uses low-temperature polysilicon thin-film transistors and includes built-in driver circuits for thinframe mounting. The high-resolution and ROB della dot

JB marking transistor

Abstract: MPS 425 transistor marking jb "UHF Transistors" k mps marking JB diode y-parameter LMBTH10WT1 sc70 marking JB
Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR Featrues LMBTH10WT1G 1 BASE 3 z We declare that the material of product 2 EMITTER compliance with RoHS requirements. 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25

JB marking transistor

Abstract: marking JB diode transistor marking JB LMBTH10LT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z We declare that the material of product compliance with RoHS requirements. Ordering Information LMBTH10QLT1G Device Marking Shipping LMBTH10QLT1G 3EQ 3000/Tape&Reel LMBTH10QLT3G 3EQ 10000/Tape&Reel 3 1 MAXIMUM RATINGS

SANYO TFT

Abstract: LV4131W ALP215
Contextual Info: Ordering number:ENN6377 LCD Module ALP215 Low-Temperature Polysilicon 1.8-inch TFT LCD Module IS A 0 O I ""V Overview Specifications This 1.8-inch LCD module is a full-color active matrix module that uses lovMemperature polysilicon thiit-film transistors and includes built-in driver circuits. The RGB

2SC2340

Abstract: NE568 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857
Contextual Info: NEC/ □427414 0001323 4 1SE D CALIFORNIA r-3 3 -c s NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 SER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H fs : 4.2 GHz The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers

mrf1535

Abstract: TRIMMER capacitor AN721 MRF1535FNT1 MRF1535N MRF1535NT1 VK200 A05T A113 AN211A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1535N Rev. 10, 9/2006 RF Power Field Effect Transistors MRF1535NT1 MRF1535FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices

H8A DATA SHEET

Abstract: LSBTH10T1G h-8a 30-1000MHZ RB marking
Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z Pb-Free Package is Available. Ordering Information Device LSBTH10T1G Marking Shipping LSBTH10T1G H8A 3000/Tape&Reel LSBTH10T3G H8A 10000/Tape&Reel MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage

2N4398

Contextual Info: TEXAS INSTR bE {OPTO} “Ô 9 6 T 7 2 6 TEXAS IN S T R D E | a^tlTHb 003bSò7 <O P T O 62C 36587 r - 3 î ' D l 3 2N4398,2N4399 P-N-P SILICON POWER TRANSISTORS RE V ISE D OCTO BER 19 84 • Designed for Complementary Use With 2N 5301, 2 N 5 3 0 2 • 2 0 0 W a t 25° C Case Temperature

0,1j 160v

Contextual Info: T E X A S J.NSTK iOMTO> 8 9 6 1 7 2 6 TEXAS INSTR COPTO '» . v* 62 C 3 6 7 5 2 D J 3 ~ / ? » *- TIP30, TIP30A, TIP30B, TIP30C, TIP30D, TIP30E, TIP30F P-N-P SILICON POWER TRANSISTORS JU LY 1 9 68 - R E V ISE D OCTO BER 1984 • Designed for Complementary Use With TIP29 series

MJW18020G

Abstract: MJW18020 TO-247 NPN SILICON POWER TRANSISTORS
Contextual Info: MJW18020 Preferred Devices NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS’s for which the high reproducibility of DC and

BU 450 bdx

Abstract: bux81
Contextual Info: TEXAS INSTR COPTO} b5 DFIflTblTab 003bbS7 □ 62C 8 9 6 1 7 2 6 TEXAS INSTR < Ö P T Ü 7 3Ò 657 BUX80 BUX81 N-P-N SILICON POWER TRANSISTORS / ~ J 3 - / 3 OCTOBER 1982 - REVISED OCTOBER 1984 150 W at 2 5 ° C C ase Temperature 10 A Continuous Collector Current

TIP33

Abstract: TIP-33
Contextual Info: TIP33, TIP33A, TIP33B, TIP33C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK • JULY 1968 - REVISED MARCH 1997 Designed for Complementary Use with the TIP34 Series • 80 W at 25°C Case Temperature • 10 A Continuous Collector Current

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1550N Rev. 14, 10/2008 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices

2N5939

Abstract: 74222 2N5940
Contextual Info: TYPES 2N5939, 2N5940 N-P-N SILICON POWER TRANSISTORS R A D IA T IO N -T O L E R A N T TRAN SISTO RS FOR PO W ER -A M PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S Formerly T IX P 3 9 , T IX P 4 0 of Min hFE of 10 at 4 V , 5 A after 1 X 10 14 Fast Neutrons/cm2

TIP310

Abstract: PTIP35
Contextual Info: TIP35, TIP35A, TIP35B, TIP35C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK • JULY 1968 - REVISED MARCH 1997 Designed for Complementary Use with the TIP36 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current