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Top Considerations When Buying or Specifying an RF Switch

Contextual Info: 12| wirelessdesignmag.com  c ata g o r y eye on switches Top Considerations When Buying or Specifying an RF Switch When choosing or specifying RF switches, all parameters must be considered simultaneously as they set the topology and circuit architecture of the switch.

HALL EFFECT 21E

Abstract: thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG
Contextual Info: RF Transistors Data Book 1997 Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B Material

Contextual Info: TEXA S IN ST R -COPTOÏ bS D E ^ j f l T t . l 7 S L 0□ 3 b 744 8 9 6 1 7 2 6 TEXAS INSTR OPTO 62C r 36744 - j j - o ? TIP29, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F N-P-N SILICON POWER TRANSISTORS J U LY 1 9 68 - RE V ISE D OCTO BER 1 9 84 •

2N9860

Abstract: 2N3869 2N3880 2N3856 n3860 transistor 2N3 2N2711 2N2712 2N3858 2N2714
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (S A T ) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘

2N918 motorola

Abstract: 2N918 MHQ918 MHQ918H MHQ918HX MHQ918HXV MIL-STD-750 2072 14NB
Contextual Info: I MHQ918 MHQ918H MHQ918HX MHQ918HXV I I I I QUAD DUAL NPN HERMETIC HIGH FREQUENCY designed for low-level, Low Noise Figure fT= 850 Transistors IC Automatic applications. Product — to 2N918 Package — Compact Insertion for Hi-Rel See Tables MAXIMUM amplifier

c2689

Abstract: C2689 equivalent automotive ignition tip162 T1P160 equivalent to tip162
Contextual Info: TEXAS INSTR ÌOPTO> d ìT | 8961 72 6 TEXAS INSTR OPTO 003^.^30 62C 36938 TIPI 60, TIPI 61, TIPI 62 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V ISE D O C T O B E R 1 9 84 50 W at 100°C Case Temperature T-33-29 10 A Rated Continuous Collector Current

tip73

Abstract: c2688 L TIP73A 1N914M 1N914F C2688
Contextual Info: TEXAS INSTR {OPTO} tâ DErjflTblT St. Ô 9 6 1 7 2 6 TEXAS INSTR OPÏUJ 003LÛ44 62C 36844 TIP73, TIP73A, TIP73B, TIP73C N-P-N SILICON POWER TRANSISTORS T - J J - f J F E B R U A R Y 1 9 7 7 - R E V IS E D O C T O B E R 1 9 8 4 Designed for Complementary Use with TIP74, TIP74A, TIP74B,

2N2150

Contextual Info: TYPES 2N2150, 2N2151 N-P-N TRIPLE-DIFFUSED PLANAR SILICON POWER TRANSISTORS 33 03 —I FOR POWER-AMPLIFIER AN D HIGH-SPEED-SWITCHING APPLICATIONS m C < 2 3 rr HI m W 2 - In 0 - 2 tf M m z m 3 P p 3 r • Dissipation Capability of 30 W at 40 V , Tc= 100°C

ALP327

Abstract: LV413 sanyo LCD diagram
Contextual Info: Ordering number:ENN6362 LCD Module ALP327 Low-Temperature Polysilicon 3.5’ inch TFT LCD Module *40VO I Overview This 3.5-inch LC D module is a full-color active matrix module that uses low-temperature polysilicon thin-film transistors and includes buill-in driver circuits, The RG B

A05T

Abstract: AN211A AN215A AN721 MRF1550FT1 MRF1550T1 VK200
Contextual Info: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices

Mextram

Abstract: GP 004 DIODE 101C 220H 320H PNP TRANSISTor experiments transistor XM
Contextual Info: Paper 9.3 Experience with the New Com pact M E X T R A M M odel for Bipolar Transistors H.C. de GraafF, W.J. Kloosterman, J.A.M. Geelen and M.C.A.M. Koolen Philips Research Laboratories P.O. Box 80000 5600 JA Eindhoven, The Netherlands A bstract Here Qte and Qtc are the emitter and collector de­

Hewlett-Packard application note 967

Abstract: HPAC-70GT 2N6617 HXTR-6102 equivalent of transistor D 2331 hewlett packard application note 972 2N6617 S parameters TRANSISTOR noise figure measurements application HXTR-6101 ghz transistor
Contextual Info: COMPONENTS Features 2 JÏ8 ¡0.078 1.5 7 l0 .0 6 2 " f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions

2N2988

Abstract: 2N2967 2N2987 2N2994 2N2989 2N2993 2N2991 EL 2n25 2N25 2N2990
Contextual Info: TYPES 2N2987 THRU 2N2994 N-P-N TRIPLE-DIFFUSED PLANAR SILICON POWER TRANSISTORS TYPES 2N2987 THRU 2N2994 BULLETIN NO. Dl-S 6810506 , DECEMBER HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS • 15 Watts at 100°C Case Temperature • Typ VcE tat of 0.2 V at 200 mA

6164

Abstract: sanyo timing controller ALP304 LV4126W SAF 3019 6642A
Contextual Info: Ordering numter:EN8104 LCD Module ALP304 p a lim Low-Temperature Polysilicon 2.8-inch TFT LCD Module i Overview This 2.8-inch LCD module is a full-color active matrix module that uses low-temperature polysilicon thin-film transistors and includes built-in driver circuits for thinframe mounting. The high-resolution and RGB delta dot

adc 0304

Contextual Info: Freescale Semiconductor Technical Data MRF1550T1 Rev. 8, 3/2005 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 MRF1550T1 MRF1550FT1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices

AN5296 Application of the CA3018 Integrated

Abstract: TA618 ca3083 relay ts4 harris transistors transistor 102 CA3183 transistor 9-t TA6183 DARLINGTON TRANSISTOR ARRAY
Contextual Info: HARRIS SEflICOND SECTOR blE D • 43DP271 004703S bSG H H A S CA3146, CA3183 33 H a r r i s S E M I C O N D U C T O R ■ W » W W High-Voltage Transistor Arrays March 1993 Features Description • Matched General Purpose Transistors • VBE Matched ±5mV Max

Contextual Info: MM54C42,MM74C42 MM54C42 MM74C42 BCD-to-Decimal Decoder Literature Number: SNOS334A MM54C42 MM74C42 BCD-to-Decimal Decoder General Description The MM54C42 MM74C42 one-of-ten decoder is a monolithic complementary MOS CMOS integrated circuit constructed with N- and P-channel enhancement transistors

ALP208

Abstract: sanyo lcd alp208 LV4126W
Contextual Info: Ordering numb»r:EN6162 LCD Modulo ALP208 S A ß ro Low-Temperature Polysilicon 1.8-inch TFT LCD Module i Overview This 1.8-inch LCD module is a full-color active matrix module that uses low-temperature polysilicon thin-film transistors and includes built-in driver circuits for thinframe mounting. The high-resolution and ROB della dot

Contextual Info: MMBTH10W VHF/UHF Transistors COLLECTOR 3 3 P b Lead Pb -Free 1 1 BASE FEATURES: 2 2 EMITTER SOT-323(SC-70) * We declare that the material of product compliance with RoHS requirements. Maximum Ratings (TA=25°C Unlesso therwise noted) Rating Symbol Value Unit

TIP626

Contextual Info: TEXAS INSTR ~b2 - COPTO} 8961726 TEXAS . ' «_•. : ' INSTR dF | ÖTblTEb D 0 3 b c]b4 ß 62C <OPTO 36964 " TIP625, TIP626, TIP627 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 Designed For Complementary Use With TIP620, TIP621, TIP622

JB marking transistor

Abstract: MPS 425 transistor marking jb "UHF Transistors" k mps marking JB diode y-parameter LMBTH10WT1 sc70 marking JB
Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR Featrues LMBTH10WT1G 1 BASE 3 z We declare that the material of product 2 EMITTER compliance with RoHS requirements. 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25

JB marking transistor

Abstract: marking JB diode transistor marking JB LMBTH10LT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z We declare that the material of product compliance with RoHS requirements. Ordering Information LMBTH10QLT1G Device Marking Shipping LMBTH10QLT1G 3EQ 3000/Tape&Reel LMBTH10QLT3G 3EQ 10000/Tape&Reel 3 1 MAXIMUM RATINGS

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z We declare that the material of product compliance with RoHS requirements. Ordering Information LMBTH10LT1G Device Marking Shipping LMBTH10LT1G 3EM 3000/Tape&Reel LMBTH10LT3G 3EM 10000/Tape&Reel 3 1 MAXIMUM RATINGS

SANYO TFT

Abstract: LV4131W ALP215
Contextual Info: Ordering number:ENN6377 LCD Module ALP215 Low-Temperature Polysilicon 1.8-inch TFT LCD Module IS A 0 O I ""V Overview Specifications This 1.8-inch LCD module is a full-color active matrix module that uses lovMemperature polysilicon thiit-film transistors and includes built-in driver circuits. The RGB