Y PARAMETERS OF TRANSISTORS Search Results

Contextual Info: Philips Semiconductors s-parameter definitions 1 General SCATTERING PARAMETERS For the use of s-parameters for the specification of The scattering or s-parameters described in this document are in accordance with IE C 60747-7, Chapter II, Section 5. 1.1 In distinction to the conventional h-, y- and z-parameters,

Top Considerations When Buying or Specifying an RF Switch

Contextual Info: 12| wirelessdesignmag.com  c ata g o r y eye on switches Top Considerations When Buying or Specifying an RF Switch When choosing or specifying RF switches, all parameters must be considered simultaneously as they set the topology and circuit architecture of the switch.

HALL EFFECT 21E

Abstract: thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG
Contextual Info: RF Transistors Data Book 1997 Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B Material

TIPP31

Abstract: TIPP31A TIPP31B TIPP31C TIPP32 TIPP32A TIPP32B TIPP32C
Contextual Info: TIPP31, TIPP31A, TIPP31B, TIPP31C NPN SILICON POWER TRANSISTORS _ M A Y 1989 • R EVISED M A Y 1995 20 W Pulsed Pow er Dissipation • 100 V C apability 1 LP PACKAGE TOP VIEW • 2 A C ontinuous Collector Current • 4 A Peak C ollector Current

100-C

Abstract: BY205-400 TIPL760 TIPL760A TIPL760B TIPL760C
Contextual Info: TIPL760, TIPL760A NPN SILICON POWER TRANSISTORS _ A U G U S T 1978 • R E V IS E D M A Y 1995 • Rugged Triple-Diffused Planar Construction • 4 A Continuous Collector Current • Operating Characteristics Fully Guaranteed at 100°C

bd743 transistor

Abstract: BD744 bd744c BD743B TEXAS INSTRUMENTS BD743 BD743A BD743B BD743C T1S63 bd744c texas instruments
Contextual Info: BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS _ A U G U ST 1978 - R E V IS E D M A Y 1995 • Designed for Complementary Use with the BD744 Series • 90 W at 25°C Case Temperature • 15 A Continuous Collector Current

TIP41C EQUIVALENT

Abstract: TIP41A equivalent TIP41 Texas Instruments TIP41 equivalent c2688 texas instruments tip41 t1p41 TIP41c Texas Instruments TRANSISTOR tip41c schematic c2688 transistor
Contextual Info: IN STR -COPTO} t i 8 9 6 1 7 2 6 T E XA S INSTR OPTO D F jlflT b lT a b OOBt fl Of l 62C 3 6 8 0 8 TIP41, TIP41 A, TIP41B, TIP41C, TIP41D, TIP41E, TIP41F N-P-N SILICON POWER TRANSISTORS J U LY 1968 - REVISED OCTOBER 1984 Designed for Complementary Use With TIP42 Series

c2688

Abstract: TIP33C equivalent TIP33A equivalent TIP33C TIP33A TIP33D C-2688 c2688 transistor br c2688 120v 120v 10a 80w transistor
Contextual Info: DE |flelbl7Sb 0 0 3 L 7 7 L 7 TE XAS I N S T R -COPTO} 62C 36776 S96t726 TEXAS INSTR OPTO TIP33, TIP33A, TIP33B, TIP33C, TIP33D, TIP33E, TIP33F N-P-N SILICON POWER TRANSISTORS JU L Y 196 8 - R EVISED O CTO BE R 1984 • Designed for Complementary Use With TIP34 Series

sw 357 opto

Abstract: b39 transistor TIP33C equivalent
Contextual Info: DE |flelbl7Sb 0 0 3 L 7 7 L 7 TE XA S I N S T R -COPTO} 62C 3 6 7 7 6 S96t726 TEXAS INSTR OPTO TIP33, TIP33A, TIP33B, TIP33C, TIP33D, TIP33E, TIP33F N-P-N SILICON POWER TRANSISTORS JU LY 1968 - RE V ISE D OCTO BER 1984 • Designed for Complementary Use With T IP34 Series

Contextual Info: TEXA S IN ST R -COPTOÏ bS D E ^ j f l T t . l 7 S L 0□ 3 b 744 8 9 6 1 7 2 6 TEXAS INSTR OPTO 62C r 36744 - j j - o ? TIP29, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F N-P-N SILICON POWER TRANSISTORS J U LY 1 9 68 - RE V ISE D OCTO BER 1 9 84 •

C2688

Abstract: C 2688 TEXAS INSTRUMENTS TIP29 c2688 transistor 74ti c2688 L TIP29 TIP29A TIP29B TIP29D
Contextual Info: INSTR -COPTO* bS »E^jflTt.l7SL 0□ 3b744 8 9 6 1 7 2 6 TEXAS INSTR OPTO 62C 36744 r - j j - o ? TIP29, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F N-P-N SILICON POWER TRANSISTORS JU LY 1968 - REVISED OCTOBER 1984 • Designed for Complementary Use With TIP30 series

2N9860

Abstract: 2N3869 2N3880 2N3856 n3860 transistor 2N3 2N2711 2N2712 2N3858 2N2714
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (S A T ) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘

Contextual Info: Philips Semiconductors General Small-signal Field-effect Transistors QUALITY Total Quality Management Philips Semiconductors is a Quality Company, renowned for the high quality of our products and service. We keep alive this tradition by constantly aiming towards one

DA 2688

Abstract: transistor DA 2688 transistors TIP32 TIP32 PNP Transistor TIP32B texas
Contextual Info: "TEXAS INSTR i O P T O F 8961726 t.5 T EX A S IN S T R D E T J M b lT S h O PTO 0D 3L7tifl Ö 62C 3 6 7 6 8 TIP32, TIP32A, TIP32B, TIP32C, TIP32D, TIP32E, TIP32F P-N-P SILICON POWER TRANSISTORS J U L Y 1968 - R EV ISED OCTOBER 1984 • Designed for Complementary Use With TIP31 Series

c2689

Abstract: C2689 equivalent automotive ignition tip162 T1P160 equivalent to tip162
Contextual Info: TEXAS INSTR ÌOPTO> d ìT | 8961 72 6 TEXAS INSTR OPTO 003^.^30 62C 36938 TIPI 60, TIPI 61, TIPI 62 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V ISE D O C T O B E R 1 9 84 50 W at 100°C Case Temperature T-33-29 10 A Rated Continuous Collector Current

TIP35C EQUIVALENT

Abstract: texas instruments tip35 c2688 TIP358 TIP35 transistor tip35c TIP35F TIP35A TIP36 texas TIP35C
Contextual Info: bs TÉXAS~INSTR -CÒPTO} D TIaibiTat, ooabVTS s | “ Ô 9 6 1 7 2 6 TEXAS INSTR ÌOPTO 7 62C 36792 TIP 35JIP 35A JIP 3 5 B , TIP35C, TIP35D, TIP35E, TIP35F N-P-N SILICON POWER TRANSISTORS R E V IS E D O C TO B E R 1 9 8 4 • Designed for Complementary Use With TIP36 Series

tip73

Abstract: c2688 L TIP73A 1N914M 1N914F C2688
Contextual Info: TEXAS INSTR {OPTO} tâ DErjflTblT St. Ô 9 6 1 7 2 6 TEXAS INSTR OPÏUJ 003LÛ44 62C 36844 TIP73, TIP73A, TIP73B, TIP73C N-P-N SILICON POWER TRANSISTORS T - J J - f J F E B R U A R Y 1 9 7 7 - R E V IS E D O C T O B E R 1 9 8 4 Designed for Complementary Use with TIP74, TIP74A, TIP74B,

2N2150

Contextual Info: TYPES 2N2150, 2N2151 N-P-N TRIPLE-DIFFUSED PLANAR SILICON POWER TRANSISTORS 33 03 —I FOR POWER-AMPLIFIER AN D HIGH-SPEED-SWITCHING APPLICATIONS m C < 2 3 rr HI m W 2 - In 0 - 2 tf M m z m 3 P p 3 r • Dissipation Capability of 30 W at 40 V , Tc= 100°C

texas instruments tip48

Abstract: T0-22Q TIP50 Texas Instruments texas instruments tip47 texas instruments tip50 1N914 2N6127 TIP47 TIP48 TIP49
Contextual Info: T E X A S I N S T R -COPTO} " ^ DlT^öTblTEb □□3LöS4 "6961726 TEXAS INSTR OPTO 62C 36824 TIP47, TIP48, TIP49, TIP50 N-P-N SILICON POWER TRANSISTORS R E V IS E D O C TO BER 1 9 8 4 4 0 W at 2 5 ° C C a se Temperature 1 A Continuous Collector Current

transistors t1p50

Abstract: texas instruments tip47 texas instruments tip50 tip50
Contextual Info: TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS D E C E M B E R 1971 - R E V IS E D M A Y 1995 • 40 W at 25°C Case Temperature • 1 A Continuous Collector Current TO-220 PACKAGE TOP VIEW 2 A Peak Collector Current N. o 20 mJ Reverse-Energy Rating

ALP327

Abstract: LV413 sanyo LCD diagram
Contextual Info: Ordering number:ENN6362 LCD Module ALP327 Low-Temperature Polysilicon 3.5’ inch TFT LCD Module *40VO I Overview This 3.5-inch LC D module is a full-color active matrix module that uses low-temperature polysilicon thin-film transistors and includes buill-in driver circuits, The RG B

TIP12B

Abstract: tip127 texas tip 127 TIP127 tip 127 texas instruments 2n6128 TIP120 TIP121 TIP122 TIP125
Contextual Info: TEXAS INSTR ÎOPTOÏ 8961726 TEXAS b5 INSTR D E | flTblYSb □ D3fc.cl[]D 4 <OPTO> 62C 36900 TIP125, TIP126, TIP127 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C TO B E R 1 9 8 4 Designed For Complementary use with TIP 120, TIP 121, TIP 122

electrical symbols

Contextual Info: Philips Semiconductors Letter Symbols - FETs General • root-mean-square values, e.g. Id rms LETTER SYMBOLS • peak values, e.g. Idm The letter symbols for transistors detailed in this section are based on IEC publication number 148. • average values, e.g. Id(av).

Contextual Info: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices