TIP36F Search Results

TIP36F

Abstract: TIP36Cf TIP35F
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS TIP35F, AF, BF, CF NPN TIP36F, AF, BF, CF PNP TO- 3PF Fully Isolated Plastic Package B C E For General Purpose Power Amplifier and Switching Applications.

TIP35

Abstract: TIP36 texas transistor tip36 TIP36C EQUIVALENT sw 357 opto
Contextual Info: TEX A S IN ST R -COPTO} b2 Ô961726 TEXAS . ?.*v . IN S T R DE J a ì b l ^ a b O P T O 003bflGD 62C 3 6 8 0 0 -T TIP36, TIP36A, TIP36B, TIP36C, TIP36D, TIP36E, TIP36F P-N-P SILICON POWER TRANSISTORS JU LY 1 9 68 - RE V ISE D OCTO BER 1984 Designed for Complementary Use With TIP35 Series

TIP35D

Abstract: P36E TIP35E TIP35F TIP36D TIP36E TIP36F tip35d.tip36d
Contextual Info: ÜlMOSPEC NPN COMPLEMENTARY SILICON KiGH-POWER TRANSISTORS TIP35D T1P36D General Purpose-Amplifier and Switching Application. TÍP35E TIP36E FEATURES: * Collector-Emitter Sustaining Voltage v CEO<*usf120v TIP35D.TIP36D 140V Min -TIP35E,TIP36E 160V (Min)- T!P35F,TIP36F

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS TIP35F, AF, BF, CF NPN TIP36F, AF, BF, CF PNP TO- 3PF Fully Isolated Plastic Package B C E For General Purpose Power Amplifier and Switching Applications.

C2688 li

Abstract: Texas Instruments TIP36C TIP36 transistor DA 2688 texas instruments tip36 TIP36C EQUIVALENT TIP36B TIP35 TIP36C TIP36D
Contextual Info: TEXAS INSTR -COPTO} b2 Ö 9 6 1 7 2 6 TEX A S . ? .* V . IN S T R D T ^ p T b V 7 ä t _ DÖ3tflGD <OPTO 62C 3 6 8 0 0 T TIP36, TIP36A, TIP36B, TIP36C, TIP36D, TIP36E, TIP36F P-N-P SILICON POWER TRANSISTORS J U L Y 1 9 6 8 - R E V IS E D O C TO B E R 1 9 8 4

Contextual Info: TIP36F Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)200 I(C) Max. (A)25 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)140# I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

TIP360

Abstract: b0751 pn5931 PN5932 b0746 sm2160 2SC2936 HITACHI ST29045 PN5929 st2904
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 A, BLX84 2SB1079 B07460 B07460 RCA91160 B0750A B0750A B0751A B0751A B0750C ~g;~~g 15 20 B0751C MJ15004 RCA9116C 2SC2820 SSP72 TIP36 B0250 SSP72A ~~~~~A 25 30 2N5883 SSP72B B0250B TIP36B 2N5884 2N6436

PT9847

Abstract: ESM752A ESM952 sm2160 ESM952A PT9785 esm752 idd1313
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on PD Max hFE fT ON) Min (HZ) Max toN Max (A) (s) 'CBO r (CE)sat Toper Max (Ohms) Max (°C) Package Style ~ Devices 20 Watts or More, (Cont'd) 5 10 PT8854 PT8854A S G S F 6 6 2 (A)

KT805M

Abstract: kt805bm KT872A KT837 KT837K KT818 KT805 KT837B KT837A KT610A
Contextual Info: ПОЛУПРОВОДНИКОВЫЕ ПРИБОРЫ Транзисторы •Биполярные транзисторы Обозначение Аналог КТ209А КТ209Б КТ209Б1 КТ209В КТ209В1 КТ209Г КТ209Д КТ209Е КТ209Ж КТ209И

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

IRF9634

Abstract: MJE13001 KT538A KT8296 KT829 KT940A kt8290 KT8270A MJE-13001 IRML2402
Contextual Info: DISCRETE SEMICONDUCTOR Transistors • Bipolar Transistors Part KT6136A KT6137A КТ607А-4 КТ607Б-4 КТ646А КТ646Б КТ646В KT660A KT660Б КТ805АМ КТ805БМ КТ805ВМ КТ805ИМ KT814A KT814Б KT814B KT814Г KT815A KT815Б KT815B KT815Г

IL311ANM

Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
Contextual Info: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.