VN03 Search Results

VN0355N5

Contextual Info: VN0355 VN0360 — N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / R d S ON Order Number / Package I d (ON) BVdgs (max) (min) TO-3 TO-220 Dicet 550V 6Q 1.5A VN0355N1 VN0355N5 VN0355ND 600V 6Q 1.5A VN0360N1 VN0360N5 VN0360ND 1" MIL visual screening available

VN0345

Abstract: VN0350N1 VN0345N2 vn0345n1 VN0350N2 vn0350 VN0345N5
Contextual Info: VN0345 VN0350 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON I d (ON) BVdgs (max) (min) TO-3 TO-39 TO-220 Dicet 450V 4Q 2A VN0345N1 VN0345N2 VN0345N5 VN0345ND 500V 4Q 2A VN0350N1 VN0350N2 VN0350N5

VN0355N5

Abstract: VN0355N1
Contextual Info: V N 03F Cj Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss I t R Order Number / Package I d ON) d s io n i BVDgs (max) (min) TO-3 TO-220 Dice* 550V 6£i 1.5A VN0355N1 VN0355N5 VN0355ND 600V

vn0300m

Contextual Info: SILICONIX INC 1ÔE D • GG3j MG7 4 b ■ VN0300 SERIES f X S ilicon ix X V 3254735 in c o r p o r a te d N-Channet Enhancement-Mode MOS Transistors T -S q -o S PRODUCT SUMMARY PART NUMBER TQ-205AD TO-39 V(BR)DSS fDS(ON) < ii) (V) Id (A) PACKAGE VN0300B

Contextual Info: VN0300 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON I d (ON) BVdgs (max) (min) TO-39 TO-92 30V 1 .2 0 . 1.0A V N 0 30 0B V N 0 30 0L Advanced DMOS Technology High Reliability Devices See pages 5 -4 and 5-5 fo r M ILIT A R Y S T A N D A R D P rocess Flows

VN03

Contextual Info: VN03 ISO HIGH SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA TYPE VN03 • ■ ■ ■ ■ ■ ■ VDSS R DS on I n (*) VCC 60 V 0.5 Ω 0.7 A 26 V MAXIMUM CONTINUOUS OUTPUT CURRENT (#): 4 A @ Tc= 85oC 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN

Contextual Info: VN03-Series Specifications 25.80L x 25.80W x 16.81H mm 1.425L x 1.070W x 0.662H (in) PDI VN03-Series Oven Controlled Crystal Oscillators (OCXO) ensures precise frequency under the most demanding circumstances. With low phase noise, performance in high vibration environments, and double-hermetically sealed quartz crystal, this OCXO

Contextual Info: VN03SP HIGH SIDE SMART POWER SOLID STATE RELAY TYP E V dss RDS on l n C) Vcc VN03SP 60 V 0.5 Q. 0.7 A 26 V . MAXIMUM CONTINUOUS OUTPUT CURRENT (#):9 A @ Tc=85°C . 5 V LOGIC LEVEL COMPATIBLE INPUT . THERMAL SHUT-DOWN . UNDER VOLTAGE PROTECTION . OPEN DRAIN DIAGNOSTIC OUTPUT

Contextual Info: S G S -T H O M S O N R H O T «! rz 7 ^ 7# V N 03 ISO HIGH SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA TYPE VN03 V d ss R D S o n In D V cc 60 V 0.5 n 0.7 A 26 V . MAXIMUM CONTINUOUS OUTPUT CURRENT (#): 4 A @ Tc= 85°C . 5V LOGIC LEVEL COMPATIBLE INPUT

Contextual Info: Supertex inc. VN0300 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON Order Number / Package I d (ON) b v dgs (max) (min) TO-92 30V 1.2& 1.0A VN0300L Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows

VN0300M

Abstract: VN0300D VQ7254J VQ7254P 25XX VP1001P VQ1001J VQ3001J VQ3001P VNMH03
Contextual Info: Pulse width 80^s—300^s, Duty cycle 1%, Tc=25°C Part Numbers: VN0300D, VN0300M, VP1001P, VQ1001J, Segments 1 and 3: VQ3001P, VQ3001J, VQ7254P, VQ7254J Leakage Currents Ohmic Region T c — CASE TEMPERATURE (°C) ON Resistance Characteristics Temperature Effects on rps(on)

VN0300

Contextual Info: VN0300 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) VN0300 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

Contextual Info: ^ Supertex inc. V N 0300 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices / Order Number / Package R d s ON ' d (ON) b v dgs (max) (min) TO-39 TO-92 30V 1.2£2 2.0A VN0300B VN0300L B V 0ss High Reliability Devices

VN0340N

Abstract: vn0335 VN0340N2
Contextual Info: VN0335 VN0340 @àSupertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information II b v dss/ BV dgs R dS ON (max) 350V 2.5 n 3A 400V 2 .5 a 3A Order Number / Package TO-39 TO-220 Dlcet VN0335N1 VN0335N2 VN0335N5 VN0335ND VN0340N1 VN0340N2

sivn

Abstract: sivn fet
Contextual Info: VN0300 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

VN03SP

Abstract: VN06SP
Contextual Info: VN03SP  HIGH SIDE SMART POWER SOLID STATE RELAY T YPE V DSS R DS on I n( *) V CC VN03SP 60 V 0.5 Ω 0.7 A 26 V • ■ ■ ■ ■ ■ ■ MAXIMUM CONTINUOUS OUTPUT CURRENT (#):9 A @ Tc=85oC 5 V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION

0401L

Abstract: VN0300L TN0401L TN0201L VN0300LS
Contextual Info: TN0201L/0401L, VN0300L/LS Vishay Siliconix N-Channel 20-, 30-, 40-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30

25Q10

Contextual Info: TN0201 L/0401 L, VN0300L/LS Vishay Siliconix N-Channel 20-, 30-, 40-V D-S MOSFETs PRODUCT SUMMARY Part Number V GS{«h)(V) b (A) TN0201L 20 1.2 @ V qs = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ V qs = 10 V 0.5 to 2 0.64 VN0300L 30 1.2 @ VGS= 10 V 0.8 to 2.5 0.64

Contextual Info: ^ . VN03E Supertex inc N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package b v dss / R d s <o n ' d o n ) BVdgs (max) (min) TO-3 TO-39 TO-220 Dice1 450V 4n 2A VN0345N1 VN0345N2 VN0345N5 VN0345ND

0300L

Contextual Info: VN0300 LJ} Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ ^DS ON B V dqs (max) 30V 1.2£i If Standard Commercial Devices 1.0A Free from secondary breakdown Low pow er drive requirement □ E a s e of paralleling

VN0355N5

Abstract: VN0355N1
Contextual Info: ^ S u p e r te x in c . VN03F N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdss / Order Number / Package b v dgs ^DS ON (max) (min) TO-3 TO -220 Dice* 550V 6n 1.5A VN0355N1 VN0355N5 VN0355ND 600V 6£2 1.5A

VN0335

Abstract: VN0340N2
Contextual Info: VN0335 VN0340 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV DSS/ Order Number / Package R d S ON I d (ON) BVdgs (max) (min) TO-3 TO-39 TO-220 Dicet 350V 2.5Q 3A VN0335N1 VN0335N2 VN0335N5 VN0335ND 400V 2.5Q 3A VN0340N1 VN0340N2 VN0340N5

Contextual Info: VN0300 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities

Contextual Info: ^ Supertex inc. VN0300 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVoss / R DS ON *D(ON) b v dgs (max) (min) TO-39 TO-92 30V 1.2Q 1.0A VN0300B VN0300L Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows