80PIS Search Results

Contextual Info: TMS29F040 524288 BY 8-BIT FLASH MEMORY SMJS820B - APRIL 1996- REVISED NOVEMBER 1987 • • • • • • • • • • Single Power Supply 5 V± 10% - 3.3 V ± 0.3 V - See ’29LF040/’29VF040 Data Sheet Literature Number SMJS825 - 2.7 V to 3.6 V - See ’29LF040/’29VF040

2SK2689-01MR

Abstract: T0-220F
Contextual Info: SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME 2SK2689-01 MR SPEC. NO. : Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric Co.,Ltd. DRAWN CHECKED _— /. Vo Y 0?57-R-004a 1.Scope This specifies Fuji Power MOSFET 2SK2689-01MR

Equivalent IRF 44

Abstract: irf630 vn0106n5 VN46 VN0108N2 BUZ44 IRF232 IRF240 IRF422 IRF522
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170

2SK2688-01

Contextual Info: SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME 2SK2688-01 L.S .: SPEC. NO. Fuji Electric Co.,Ltd. This Specification Is subject to change without notice. DATE DRAWN. NAME APPROVED Fuji Electric Co.,Ltd. CHECKED, 1/ y n w -p -n ru » 1.Scope This specifies Fuji Power MOSFET 2SK2688-01 L,S

siemens 314S

Abstract: BUP 314S 314S
Contextual Info: SIEMENS BUP 314S Preliminary data IGBT • High switching speed • Very low switching losses • Low tail current • Latch-up free • Avalanche rated Type ^CE BUP314S 1200V 25A h Package Ordering Code TO-218 AB C67040-A4207-A2 Maximum Ratings Parameter

Equivalent IRF 44

Abstract: sony 2sj54 VN0109N3 irf 80 n BUZ44 VN0104N5 2SJ54 irf 44 n VN0108N2 VN0104N1
Contextual Info: Siliconix 1-1? f l CO CO COCO Ol o LL. U . t t ù i • ■ N M C O M «M O LL. U . IRF230 ■ IRF231 - IRF232 ■ IRF233 IRF630 ■ IRF631 - IRF632 ■ IRF633 200VMOSPOWER These power FETs are designed especially for switching regulators, power converters,

irf630 equivalent

Abstract: irf630 irf640 irf630 mtm5n35 MTM5N40 IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF
Contextual Info: 1-17 MOSPOWER Cross Reference List c « g s s <0J= P fi c i n i n m i n • - CM CM CM ^ • 'd d d o d 1o o o o o I m iD lO m | ' r r r ' s ' I O O < O Ò I I I I I | ' ' ' lO ' I P ' ' ' ' I I j j CO00 COCO j j ' I o o r i mm | ioom m I L -^ ^ l I c\i CM i

2SK2689-01MR

Contextual Info: SPECIFICATION DEVICE NAME : P ow er M OSFET : 2SK2689-01 MR TYPE NAME SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Co.,Ltd. DRAWN CHECKED — / I/* .i . •~ Y n?57-R-004a 1.Scope

transistor g23 mosfet

Contextual Info: P D -9.1146 bitemational Ë g i Rectifier IRGPC30S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve

irf630 equivalent

Abstract: MTM5N40 IVN6100TNU VN2410L "cross reference" MTM3N55 IRF533 IVN6200CND IVN6200CNE irf 150 equivalent IVN6200CNH
Contextual Info: 1-17 MOSPOWER Cross Reference List c « s s <0J= g i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I I j j CO00 COCO j j ' I I I I OOOO ' ' I I o o r i mm | ioom m I L -^ ^ l ' < O Ò ' ' ' lO ' ' ' ' '

irf 630

Abstract: ALL IRF 3.335t irf630 IRF620 IRF622 IRF631 IRF632 vn89af IRF640
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150

irf 630

Abstract: AAIJ IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452
Contextual Info: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350