VCB1 Search Results

Contextual Info: VCB1 Half Size DIP Featuring 3.0 or 5.0 Vdc Option Low Cost 1 to 160 MHz Enable Disable Option TTL/CMOS Compatible Frequency Range 32.768 KHz to 160 MHz 80 to 160 MHz uses a low jitter internal <50 ps multiplier IC which will also affect phase noise performance.

2N998

Abstract: 2N2723 CB10
Contextual Info: MGTORCLA SC XSTRS/R F 12E Sym bol Value Unit VCE20 60 Vde Collector-Base Voltage VcB1 80 Vdc Emitter-Base Voltage VE2B1 12 Vdc Collector Current — Continuous ic 40 Adc Total Device Dissipation @ Ta =- 25°C Derate above 25°C PO 0.5 2.9 Watt mW/°C Total Device Dissipation @ T c = 25°C

VCB1

Abstract: MIL-STD-883, Method 1010
Contextual Info: Electrical Characteristics VCB1 Series Oscillator Parameter Symbol Minimum Typical 5.0 V 3.3 V 0.032768 5.0 V 3.3 V Maximum 5.0 V Unit 3.3 V Frequency Range f0 Operating Temperature Range T0 0 to 70 or -40 to 85 Storage Temperature TS -55 to 125 °C VDD ± 25, ± 50, ± 100

J-STD-020B

Contextual Info: VCB1 series 3.3, 5.0 volt CMOS Oscillator Features • CMOS output • Output frequencies to 160 MHz • Tri-state output for board test and debug • 0/70 or –40/85 °C operating temperature • Product is compliant to RoHS directive and fully compatible with lead free assembly

VCB1

Contextual Info: VCB1 series 3.3, 5.0 volt CMOS Oscillator Features • CMOS output • Output frequencies to 160 MHz • Tri-state output for board test and debug • -10/70 or –40/85 °C operating temperature • Product is compliant to RoHS directive and fully compatible with lead free assembly

MPSA63

Abstract: MPSA63 equivalent 100C100B mps-a63 C10AA MPSA62 mpsa64
Contextual Info: TOSHIBA TRANSISTOR MPSA62, 63, 64 SILICON PNP EPITAXIAL TYPE PCT PROCESS DESIGNED FOR PRE-AMPLIFIER INPUT APPLICATIONS REQUIRING HIGH INPUT IMPEDANCE. FEATURES : • High DC Current Gain I I C-10«A : hFE- 5000(Min.) MPSA63 10000(Min.) MPSA64 20000(Min.) MPSA62

2N6353

Abstract: 2n6351 RB1-E
Contextual Info: SÖE D TELED YN E COMPONENTS ö*il7bC15 üDQtiS42 t. T -3 3 -a 7 NPN POWER DARLINGTON 5AMP SWITCHING TRANSISTORS 2N6350 thru 2N6353 GEOMETRY 508 • KD5A • LowVCE Sat • High Gain TO-33 • Monolithic Construction MAXIMUM RATINGS SYMBOL 2N6350 2N6351 2N6352 2N6353 UNIT

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2SC1553

Abstract: 2SC1553A 2sc15 scjti SC1553 nf1sd S211
Contextual Info: TOSHIBA BT OISCRETE/OPTOJ D E ~ | ‘iD Î T E S 0 D 0 G 0 4 B 1 9 0 9 7 2 5 0 T O S H I B A D I S C R E T E /O P T O 39C 00431 _ •_ T - O U H F Band L o v N o i a e A m p l i f i e r A p p l i c a t i o n s

2SA1015

Abstract: 2SA10150 2SA1015 0
Contextual Info: 4 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS ''" M i t t - ZSClölO AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES : • High Voltage and High Current. VCEO=50V (Min.), Ic=150mA (Max.)

Samsung galaxy S4

Abstract: Samsung Galaxy A
Contextual Info: MAX14657/MAX14658/ MAX14659 Dual-Channel USB Host Adapter Emulators General Description The MAX14657/MAX14658/MAX14659 are next-generation dual-channel USB 2.0 host-charger adapter emulators that combine USB Hi-Speed analog switches with a USB adapter emulator circuit.

pwm sinewave timing

Abstract: A114 A115 C3216X5R0J106M JESD22 JESD78 NCP1500 NCP1500DMR2 RLF5018T MSOP-8 PFM light load
Contextual Info: NCP1500 Dual Mode PWM/Linear BUCK Converter The NCP1500 is a dual mode converter that operates as either a pulse width modulated PWM buck converter or as a linear regulator. The converter automatically transitions between the two modes. The converter operates as a PWM when a synchronization signal is present

Contextual Info: TOSHIBA ÍDISCRETE/OPTO} ~TD 9097250 TOSHIBA DISCRETE/OPTO SEMICONDUCTOR TECHNICAL DATA D Ê J 70772SO 001bS7M H 90D 16274 H G 1 5 0 H 1 Ï LI MG15 0H2CL1 M G 1 5 0 H 2 D L 1 hJ Eu H ffi o m h o £ O TOSHIBA CORPORATION G T I A2A DTr-33-‘35 TOSHIBA _

Contextual Info: TPC6701 TOSHIBA TPC6701 TOSHIBA Taransistor Silicon N P N Epitaxial Type Unit: mm O High-Speed Switching Applications Olnverter ^0 3:0.1 Lighting Applications I n c lu d in g 2 u n i t s in a sm all s u r f a c e mounted package High DC c u r r e n t g a i n : h F E ~ 4 0 0 ~ 1 0 0 0 lc=0. 1A

diode E1110

Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Contextual Info: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t

12v 5v converter

Abstract: d 1047 IRDCIP1206-B IRF C20 AN-1028 AN-1030 TP10
Contextual Info: REFERENCE DESIGN IRDCiP1206-B International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA IRDCiP1206-B: 300 kHz, Dual Output, Synchronous Buck Converter using iP1206 Overview This reference design is capable of delivering a continuous current of 30A; i.e.

BM45-12

Abstract: ACRIAN T808 LBAA BM45-12-2 Scans-00115720
Contextual Info: 0182998 A C R I AN INCT? D lT | 0 1 0 2 ^ 0 0D013D7 fl W ~07 D AN BM45"12 GENERAL DESCRIPTION 45 WATTS - 12.5 VOLTS 150-175 MHz The BM45-12 is specifically designed to meet rugged VHF land mobile radio requirements. Internal matching simplifies circuit design

MM4048

Abstract: BC406 L17D D29A10 D29A12 D29A7 D29A8 D29A9 MA7809 SA2255
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2SC4081

Abstract: 2A1576A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC4081 TRANSISTOR NPN FEATURES z Excellent hFE linearity z Complements the 2A1576A 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

xo 405 mf

Abstract: SM 8002C staa9fc SG-615PH C nct040c saronix nch060c hosonic crystal cross reference saronix NTH069C Siward crystal xtal Saronix STAA9FC
Contextual Info: GENERAL COMPETITOR CROSS REFERENCE Manufacturer Part Number Abracon Abracon Abracon Abracon Abracon Abracon Bliley Champion Champion Champion Champion Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen

MAX4908

Contextual Info: 19-3958; Rev 0; 2/06 Dual 3:1 Clickless Audio Multiplexers with Negative-Signal Handling Features The MAX4908/MAX4909 dual 3:1 clickless audio multiplexers feature negative-signal capability that allows signals as low as V CC - 5.5V to pass through without

MAX14531E

Abstract: VCB1
Contextual Info: 19-4597; Rev 0; 4/09 KIT ATION EVALU E L B AVAILA USB 2.0 Hi-Speed and Audio Switches with Negative Signal Capability and ±15kV ESD Features The MAX14531E–MAX14534E high ESD-protected DP3T switches multiplex Hi-Speed 480 Mbps USB signals, low/full-speed USB signals, and analog signals such as AC-coupled audio or video through any

MAT03 op

Abstract: cascode miller capacitance low noise Microphone Preamplifier
Contextual Info: a FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 ␮V max Low Noise: 1 nV/√Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE Ӎ 0.3 ⍀ typ Available in Die Form

TA-2946

Abstract: transistor TE 2162
Contextual Info: Ordering number : ENN6793 | NPN Epitaxial Planar Silicon Transistor CPH5504 High-Current Switching Applications Applications • DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions u n it: mm 2162 Features • Composite type with 2 NPN transistors in one