VCE20 Search Results

2N998

Abstract: 2N2723 CB10
Contextual Info: MGTORCLA SC XSTRS/R F 12E Sym bol Value Unit VCE20 60 Vde Collector-Base Voltage VcB1 80 Vdc Emitter-Base Voltage VE2B1 12 Vdc Collector Current — Continuous ic 40 Adc Total Device Dissipation @ Ta =- 25°C Derate above 25°C PO 0.5 2.9 Watt mW/°C Total Device Dissipation @ T c = 25°C

CE020

Contextual Info: MOTOROLA SC XSTRS/R F 12E D | Sym bol Value Unit VCE20 40 Vdc Collector-Base Voltage VC B 1 0 60 Vdc Emitter-Base Voltage Pin 4 to Pin 2 VE2B10 15 7.5 Vdc Collector Current — Continuous ic 200 mAdc Total Device Dissipation @ Ta = 26°C Derate above 25°C

YTS2222A

Abstract: transistor marking 1p Z
Contextual Info: ¡ TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS y t ä m m II YTSZZZZA FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION FEATURES: . DC Current Gain Specified : 0.1— 500mA . Low Collector-Emitter Saturation Voltage

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

K102 P3

Abstract: K102 la 5531 DIN 50014 STANDARD F119 K102P K102P2 K102P3 DIN 50014 PS4030
Contextual Info: D TELEFUNKEN E LE CTRONI C • fl^üCHb GD077S1 3 IAL66 K 102 P TÏÏitLtiipyMKiNI electronic Creative Technologies -3 Construction: Emitter: Detector: Applications: Galvanically separated circuits, non-interacting switches

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

Contextual Info: 45E D • ^ 0 ^ 7 2 5 0 DDlVflbl 2 TOSHIBA TRANSISTOR T0S4 - MPS2907A SILICON PNP EPITAXIAL TYPE PCT PROCESS TO SHIBA (DISCRETE/OPTO) FOR HIGH SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND COMPLEMENTARY CIRCUTRY. FEATURES : . High DC Current Gain Specified : -0.1- 500mA

diode v3e

Abstract: BT 1490
Contextual Info: 1hfl Cci i l' l ' i* Dll' 40 BV*í rn" ii*i |jr al Fv.í It I-1'« D '0 ,"> e ' lv ol Ih« Cu v ^ l'l'O v l >• VU O 1 * O y . lid p g í p u sci íi>f rf p íijrt ix g c l. C O f>'«ú E le U 'ic n.jn u faciu nn y W BV ll'» t« n i« n l 1^' I'l « 'I V

le2m

Contextual Info: BF720 BF722 SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS ISSUE 3 - JANUARY 1996 O FEATURES * High breakdown and low saturation voltages APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPES:- BF720-BF721

ztx658

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX658 ISSU E 1 - APRIL 94_ FEATURES * 400 Volt V CE0 * 0.5 A m p continuous current * Ptot=1W att A P P L IC A T IO N S * Telephone dialler circuits E-Lina T 092 Compatible

RG911

Abstract: servo iai
Contextual Info: 2-Pack IGBT 600 V 200 A FUJI S ïL S ta F O g ô Ë 2 M B I 2 F - IGBT MODULE F series 6 O utline D raw in g s • Features • Low Saturation Voltage • V o lta g e D rive • V ariety o f P o w e r C apacity Series ■ A p p lica tio n s • In verter fo r M o to r D rive

2MBI300L-060

Abstract: 82307
Contextual Info: 300L -060 _ _ 2-Pack IG B T 2ÊÊBI « L e IGBT MODULE L series ISSX Outline Drawings • Features • High Speed Switching • Low Saturation Voltage • Voltage Drive ■ Applications • Inverter for Motor Drive • AC and DC Servo Drive Amplifier • Uninterruptible Power Supply

Contextual Info: SHARP GP1S39 G P1S39 Subm iniature, Double-phase Output, W ide Gap Photointerrupter • Features ■ Outlne Dimensions 1. Ultra-compact package 2. PWB mounting type 3. Double-phase phototransistor output type for detecting of rotation direction and count 4. Wide gap between light emitter and

Contextual Info: 61083 2N2907AUA SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR OPTOELECTRONIC PRODUCTS DIVISION 0.225 5.72 0.215 (5.46) Features • • • • jns*- Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed Mil-S-19500 screening available

diode 060

Contextual Info: F U JI 2-Pack IGBT 600 V 100 A 2MBI100L-060 M U M Ë ïïr a iÊ IGBT MODULE ( L series Outline Drawings • Features • High Speed Switching • Low Saturation Voltage • Voltage Drive ■ Applications • Inverter for Motor Drive • AC and DC Servo Drive Amplifier

Contextual Info: o CL055 THE CL055 PNP AND CL066 (NPN) ARE SILICON PLANAR EPITAXIAL COMPLEMENTARY PAIR SPECIALLY DESIGNED FOR 1-WATT AUDIO AMPLIFIER OUTPUT AND SWITCHING APPLICATIONS. THEY FEATURE LCW COLLECTOR-EMITTER tNEE VOLTAGE AND GOOD LINE­ ARITY OF D.C. CURRENT GAIN.

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request

Contextual Info: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR o C O M P L E M E N T A R Y T Y PE - SXT A92 P A R T M A R K IN G D ET A IL - S ID C E B c SOT89 ABSOLUTE MAXIM UM RATINGS. SY M B O L PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE UNIT V CB0

IRGTI0075M12

Abstract: m5x0.8 IGBT FW diode 1200V d0251 IGBT M50
Contextual Info: Preliminary Data Sheet No. PD-9.927 International S Rectifier i r g t i o o 75 m i 2 "HALF-BRIDGE" INT-A-PAK MODULES Fast™ IGBT • Rugged Design • Simple gate-drive • Fast operation up to 10 kHz hard switching, or 50 kHz resonant • Switching-Loss Rating includes all "tail“

2SC2068

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC2068 Unit in mm COLOR TV CHROMA OUTPUT A P P LIC A TIO N S . FEATURES» . H i g h Voltage : V c e q - 300V . Small Coll e c t o r Output Capacitance M A X I M U M RATI N G S C o b-4.OpF Max. (Ta=25 C) CHARACTERISTIC SYMBOL

PL0001

Abstract: BOT 347 trw hybrid VnF-10 PL0001 motor GPM102D IOPM102T OPM1020 OPM102D OPM102T
Contextual Info: OPTEK TECHNOLOGY INC OLE D | bTTflSÛO OOÜOM4S 1 | « O p to electron ics D ivisio n • m i a « MMXWW - r - H »“7 3 T R W Electronic Components Group Produc t B u lle tin P L 0 0 0 1 S e p te m b e r 1 9 8 6 Surface Mount Reflective Object Sensor types 0 P M 1Q 2 T , 0 PM 10 2 D

KPC4N35

Abstract: KPC817 COSMO kpc817
Contextual Info: PRODUCT SPECIFICATION 08/20/98’ DATE: cosmo E L E C T R O N IC S Photocoupler : no KPC4N35S C O .L T D . . 61P01002 SH EET REV. 1 OF 5 High R e l ia b il i ty P h o t o c o u p l e r • Features 1. C u r r e n t t r a n s f e r r a t i o CTR : MIN.6 0 % a t l F = 2 m A

Contextual Info: TOSHIBA DISCRETE/OPTO 4SE D • ^0=17250 O a i T ^ S 1 «TOSM TOSHIBA YTQ9QÍ17 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) YTSZ907 FOR HIGH-SPEED SWITCHING USE DC TO VHF AMPLIFIER APPLICATIONS AND

Contextual Info: TOSHIBA DISCRETE/O PTO TO S H IB A TR A N S IS TO R 45E D • 1 O -]72S0 0G17T12 b «T O S 4 YTS2222A SILICON NPN EPITAXIAL T Y P E (PCT PROCESS) -~J~ 7 Í | _ l S FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO +0.5 2.5-Û3 VHF FREQUENCY APPLICATION