UT234 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2340 Power MOSFET P-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UTC UT2340 is P-Channel enhancement mode Power MOSFET, designed in serried ranks with fast switching speed, low on-resistance and favorable stabilization. Used in commercial and industrial surface mount applications

diode sy 162

Abstract: tr/diode sy 162
Contextual Info: UNISONICTECHNOLOGIESCO., LTD UT2340 Power MOSFET P-CH AN N EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON The UTC UT2340 is P-Channel enhancement mode Power MOSFET, designed in serried ranks with fast switching speed, low on-resistance and favorable stabilization.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2340 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UT2340 is P-Channel enhancement mode Power MOSFET, designed in serried ranks with fast switching speed, low on-resistance and favorable stabilization. Used in commercial and industrial surface mount applications

Contextual Info: DIGITRON SEMICONDUCTORS UT234-UT347, UT249-UT363 UT251-UT364, UT261-UT268 RECTIFIERS 1 Amp to 2 Amp MAXIMUM RATINGS Peak Inverse Voltage 1 Amp Series 100V 200V 400V 500V 600V 800V 1000V 1.25 Amp Series 1.5 Amp Series 2 Amp Series UT236 UT234 UT235 UT237 UT238

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2340 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UT2340 is P-Channel enhancement mode Power MOSFET, designed in serried ranks with fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount

1n4001 melf

Contextual Info: Standard Recovery Rectifiers Part Number ' JANTXV1N649-1 USS15 USS10 USS7.5 1N4001 1N4001GP DL4001 GS1A RL101 S1A UR105 1N4002 1N4002GP DL4002 GS1B RL102 S1B UR110 UT236 UR115 1N3611 1N4003 1N4003GP 1N4245 1N5614 1N5614US DL4003 GS1D JAN1N3611 JAN1N4245 JAN1N5614

UT347

Abstract: Microsemi micronote series 050 UT362 UT242
Contextual Info: UT236 – UT347, UT249 – UT363, UT251 – UT364 and UT261 – UT268 1 Amp To 2 Amp Standard Recovery Rectifiers Available DESCRIPTION This miniature, standard recovery rectifier diode series offers the user extreme reliability for highreliability applications. These devices are available in the leaded A package configuration.

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

HR604064

Abstract: TG05-1505NV6 PM8403 UT23755 Hanrun AN377 UT23022 PMT119 J1 cable 40 pinouts AN-377
Contextual Info: Transformer Selection Guide for IDT T1/E1/J1 LIU and Transceiver Application Note AN-377 TABLE OF CONTENTS INTRODUCTION . 2

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

USD1120

Abstract: USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702
Contextual Info: SCHOTTKY RECTIFIERS PRODUCT SELECTION GUIDE - e Similar to DO-41 TO-247 TO-220AC TO-39 mwm i m m m •' f ö * i . ! Ì ■ _ / •0 41 äEEBIÄE j >*, mmm \ . i*SA :iw !: VrM • *ss«ki:; • f f i“ USD1120 .45 @ 1A 50A 1N5818 .55 @ 1A 25A USD1130 .475 @ 1A

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

triacs bt 804 600v

Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­

UT347

Abstract: UT234 UT236 UT242 UT249 UT251 UT252 UT261 UT262 UT363
Contextual Info: R FP TIFIFR Q ? J I f i r •. A r\ UT236UT347 UT249-UT363 UT251-UT364 UT261-UT268 a Standard Recovery, 1 Amp to 2 Amp FEATURES DESCRIPTION • • • • • These m iniature power rectifiers offer the user extreme reliab ility for high-rel m ilitary supplies.

UT347

Abstract: Microsemi micronote series 050
Contextual Info: UT236 – UT347, UT249 – UT363, UT251 – UT364 and UT261 – UT368 1 Amp To 2 Amp Standard Recovery Rectifiers Available DESCRIPTION This miniature, standard recovery rectifier diode series offers the user extreme reliability for highreliability applications. These devices are available in the leaded A package configuration.

MUR1560 equivalent

Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
Contextual Info: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and