UPD41 Search Results

6256 RAM

Abstract: nec 2601
Contextual Info: - 2 5 6 K * iä&ieffl m % it £ *C UPD41257V-15 NEC 0-70 nMOS 'f -y * > r Dyna mi c # TAH nin (ns) TP my (ns) TCAD nin (ns) nin (ns) 260 25 25 100 TRAC max (ns) TRCY 120 nin R AM ( 2 6 2 1 4 4 x 1 ) IE tt nin (ns) TDH nin (ns) TRWC min (ns) ?.m 40 310 V D D or V C C

PD410

Abstract: UPD410
Contextual Info: NEC NEC Microcomputers, Inc. /¿PD410 U.PD410-1 /¿PD410-2 /Ì.PD410-3 4096 BIT HIGH SPEED STATIC MOS RANDOM ACCESS MEMORY D E S C R IP T IO N The UPD410 is a very high speed 4 K bit static random access memory. It is organized as 4096 words by 1 bit per word and fabricated using N channel silicon gate M O S

INS250

Abstract: uPD411A-1 ud411 Pd411a 2107B A10C HPD411A IPD411A JPD411A-2 UPD411A
Contextual Info: ^ -b NEC Microcomputers, Inc. SEC UPD411A uPD411A-1 ¿¿PD411A-2 t A-1 /: ' v; 4096 BIT DYNAM IC RAM S D E S C R IP T IO N Th e /uPD411A Fa m ily consists of four 409 6 words by 1 bit dynam ic N-channel MOS RAIVts. Th ey are designed for memory applications where very low cost and large bit

2107B

Abstract: d411a A10C HPD411A IPD411A JPD411A-2 UPD411A uPD411A-1 INS250 upd411
Contextual Info: ^ -b NEC Microcomputers, Inc. SEC UPD411A uPD411A-1 ¿¿PD411A-2 t A-1 /: ' v; 4096 BIT DYNAM IC RAM S D E S C R IP T IO N Th e /uPD411A Fa m ily consists of four 409 6 words by 1 bit dynam ic N-channel MOS RAIVts. Th ey are designed for memory applications where very low cost and large bit

PD411000-12

Abstract: uPD411000-15 ud411 1664B 411000
Contextual Info: J W /X V * w //P D 41 100 0 1 ,0 4 8 ,5 7 6 x 1-BIT d y n a m ic n m o s r a m NEC Electronics Inc, P R E LIM IN A R Y INFORMATION D e s c rip tio n P in C o n fig u ra tio n s The/uPD411000 is a page mode version 1,048,576-word by 1-bit dynamic N-channel M O S random access

d41464c

Abstract: NEC 41464c ud41464 41464c RAM
Contextual Info: NEC UPD41464 65,536 X 4-Bit Dynamic NMOS RAM NEC Electronics Inc. Description Pin Configurations The /UPD41464 is a 65,536-word by 4-bit dynamic RAM designed to operate from a single + 5-volt power sup­ ply and fabricated with a double polylayer, N-channel

Contextual Info: '. Ï ' - n NEC Microcomputers, Inc. ! A /: •<}' ?Æ C -A ’ UPD411A uPD411A-1 ¿¿PD411A-2 1 V ^ ! 4096 BIT DYNAMIC RAMS D E S C R IP T IO N T h e ¿ iP D 4 1 1A F a m ily co nsists o f fo u r 4 0 9 6 w o rd s b y 1 b it d y n a m ic N -ch a n n e l M O S

mpd416c

Abstract: UPD416 PD416D oq 0051 nec D416 PD416-5 MPD416D
Contextual Info: jjpù4i y piPD416-1 /¿PD416-2 fiPD416-3 ^PD416-5 NEC Electronics U.S.A. Inc. Microcomputer Division 16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY DESCRIPTION T h e N E C /uPD41 6 is a 16384 w ords by 1 b it D y n a m ic M O S R A M . It is designed fo r

upd410

Abstract: ram PD41
Contextual Info: SEC NEC Microcomputers, Inc. /¿PD410 UPD410-1 ¿¿PD410-2 /¿PD410-3 as 4096 words by 1 bit per w ord and fabricated using N channel silicon gate M O S technology. A ll signals to the device are T T L com patible except fo r Chip Enable w h ich is standard

UPD414C

Abstract: PD414 SP414
Contextual Info: N E C microcomputers,inc. /Ì.PD414-E fj.P D414 /¿.PD414-1 /¿PD 414-2 O B S O IX T ^ FULLY DECODED RANDOM ACCESS 4096 BIT DYNAM IC MEMORY DESCRIPTION The N E C /¿PD414 is a 4 0 9 6 words by 1 b it D ynam ic N channel M OS R A M . It was designed fo r m em ory applications where very low cost and large bit storage are

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

a9hv

Abstract: 40194B CD40194B HCC40194B HEF40194BP MC14194B TC40194BP UPD4194BC TC-4019
Contextual Info: - 140 401 94B 4 B it B id ire c tio n a l Universal S h ift R e g is te r m m m 7 '□ 16 15 14 13 2 1! »0 9 RESET — SHIFT RIGHT — DO — Dl — 02 — 03 — SHIPT LEFT — !• 2 3 4 5 6 7 e Vss — — — — — — — — — "j $ VDD 00 01 02

MSM40193

Abstract: JL-01 LJTB TC40193BP CD40193B HEF40193BP HCC40193B MSM40193BRS SCL40193B UPD4193BC
Contextual Info: 139 - - 401 9 3 B Presetable Up/Dow n Counter • «fit m a s m • 7' 7 7 ij-t-zb J2 — I • 16 — Voo 02 — 2 15 “ Ql — 3 14 — R ESET 13 — BORROW Jl 3 X f-h 4 UP — 1 5 12 — C A Ä R Y 03 — II 6 i -L p t ^ o t > "I ~ ;s 1 i d v'oo ^ p 1

CY2147-55

Abstract: Mostek CY2147-35 CY2147-45 Z6104-1 Z6104-2 Z6104-4 MK4104j
Contextual Info: 21 - 4 K A m « tt TAAC % CC ns) TCAC lax (ns) TOE nax (ns) T0H min (ns) nMOS •/ TOD max (ns) fTP min (ns) C l o c k e d >- w* y T*P B ill (ns) TDH min (ns) RAM (40 9 6 tt TRCY min (ns) 1) X 18 P I N TWCY min (ns) TAS tin (ns) TAH min (ns) V D D or V C C

UPD411

Abstract: PD411000-12
Contextual Info: NEC ¿/PD411000 1 ,0 4 8 ,5 7 6 x 1-BIT DYNAMIC NMOS RAM NEC Electronics Inc, PRELIMINARY INFORMATION Description Pin Configurations T h e fiP D 4 1 1000 is a page m ode version 1,048,576-word by 1 -b it d yn a m ic N -channel MOS random access m em ory RAM . It is designed to o p e ra te f r o m a single

414256

Abstract: D414256 NEC 20PIN DIP
Contextual Info: NEC /¿P D 414256 2 6 2 ,1 4 4 X 4 -B IT D YN A M IC NMOS RAM NEC Electronics Inc. P R E L IM IN A R Y INFORMATION Description Pin Configurations The //PD414256 is a 262,144-word by 4-bit dynamic N-channel MOS random access memory RAM de­ signed to operate from a single +5 V power supply. The

D41256

Abstract: 41256 ram 41256
Contextual Info: Y * ryÆ L W NEC Electronics Inc. PPD41256 262,144 X 1-Bit Dynamic NMOS RAM Description Pin Configurations The iiPD41256 is a 262,144-word by 1-bit dynamic RAM designed to operate from a single + 5-volt power supply and fabricated with a double polylayer, N-channel,

30-pin simm memory

Abstract: 433 Mc MC-41256A9B MC-41256 30 pin simm SIMM 30-pin MC-41256A9-12 MC-41256A9-15 uPD41256 "30 pin simm"
Contextual Info: NEC M C -4 1 2 5 6 A 9 2 6 2 , 1 4 4 x 9 -B IT D Y N A M IC N M O S R A M M O D U LE NEC Electronics Inc. P R E L IM IN A R Y IN F O R M A T IO N Pin C o n fig u ra tio n s D escrip tio n The M C -41256A9 is a 262,144-word by 9 -b it NM OS d y n a m ic RAM m odule, designed to operate from a

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2sk2500

Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

2TT 4.00 MG

Abstract: MB81464-12 81464-12 MB81464 equivalent b1464 MB81464 DIP-18P-M03 HM50464 ZIP-20P-M01 UPD41254
Contextual Info: T-4 é>~2 ô - / 7 FUJITSU MICROELECTRONICS 47E D • 374=571=2 001*1311 7 BFNI FUJITSU October 1990 Edition 6.0 DATA SHEET MB81464-12/-15 MOS 262,144 B IT DYNAMIC RANDOM ACCESS M EM O R Y 65,536 x 4 Bits Dynamic Random Access Memory The Fujitsu MB81464 Is a fully decoded, dynamic random access memory

uPD42101

Abstract: PD42101 B7S2 uPD41101 analog signal delay UPD42102 UPD411 TSC 913 AS1135 mPD41
Contextual Info: E C ELECTRONICS INC NEC 3flE D NEC Electronics Ine. B t,MS7S2S 003 1427 5 M N E C E APPLICATION NOTE 55 yt/PD41101/uPD41102 H IGH-SPEED LIN E B U F F E R S 5 Introduction Figure 1. The //PD411Q1 and ¿ PD41102 are high-speed serial access line buffers organized as 910 words x 8 bits and

L64811

Abstract: M14008 video frame buffer AM27C256-205JC L64853 L64801 L64S24 L64825
Contextual Info: LSI ILOGIC 53G4ÖC4 DDlllSfl 7 3 cì BBLLC L64825 SBus Video Frame Buffer Technical Manual E3 S304504 ODll'iS'J b7S EE3LLC This document is preliminary. As such, it contains data derived from func­ tional simulations and performance estimates. LSI Logic has not verified the