UPC1676 Search Results

UPC1676G-T1

Abstract: UPC1676 16ANG UPC1676B UPC1676G UPC1676P mmic case styles
Contextual Info: UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER FEATURES UPC1676G NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE • WIDE BANDWIDTH: 1200 MHz at 3 dB Point for UPC1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P 30 5.0 V • HIGH ISOLATION

UPC1676G-T1

Abstract: UPC1676 UPC1676B UPC1676G UPC1676P
Contextual Info: UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER FEATURES UPC1676G NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE • WIDE BANDWIDTH: 1200 MHz at 3 dB Point for UPC1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P 30 5.0 V • HIGH ISOLATION

UPC1676B

Abstract: UPC1676 mmic s5 UPC1676G UPC1676P
Contextual Info: NEC UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER OUTLINE DIM ENSIONS FEATURES Units in mm O UTLINE 39 (SOT-143) • W ID E BAND W IDTH: +02 1200 MHz TYP at 3 dB Point for UPC1676G 1300 MHz TYP at 3 dB Point for UPC1676B/P

PC1676G

Contextual Info: 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER FEATURES UPC1676G UPC1676P u p c i 6?6g NOISE FIGURE AND GAIN -• WIDE BANDWIDTH: 1200 MHz at 3 dB Point for UPC1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P

UPC1676B

Abstract: VCC 3802 Axis 210 UPC1676G
Contextual Info: N E C / CALIFORNIA SbE D • t.427414 0002bS0 334 » N E C C NEC UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER — - T - 1 4 -13- 0 I OUTLINE DIMENSIONS FEATURES Units in mm OUTLINE 39 (SOT-143) • W ID E BANDW IDTH: 1200 MHz TYP at 3 dB Point for UPC1676G

Contextual Info: NEC UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER OUTLINE DIMENSIONS FEATURES Units in mm OUTLINE 39 (SOT-143) • W ID E B A N D W ID T H : 1200 M H z T Y P at 3 dB Point for U P C 1676G 1300 M H z T Y P at 3 dB Point for U P C 16 7 6 B /P

Nec b 616

Abstract: UC1676 IC-1891
Contextual Info: • > DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT _/JPCi 676G GENERAL PURPOSE WIDE BNAD AMPLIFIER DESCRIPTION The ,uPC1676G is a silicon m onolithic integrated circuit employing small package 4pins mini mold and designed for use as a wide band am plifier covers from HF band to UHF band.

Contextual Info: UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER FEATURES UPC1676G NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE WIDE BANDWIDTH: 1200 MHz at 3 dB Point for UPC1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P HIGH POWER GAIN: 22 dB TYP AT f = 500 MHz

UPC1676B

Contextual Info: UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER UPC1676G NOISE FIGURE AND GAIN vs. FREQUENCY FEATURES WIDE BANDWIDTH: 1200 MHz at 3 dB Point for UPC1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P HIGH POWER GAIN: 22 dB TYP AT f = 500 MHz

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

transistor t06

Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX

mmic a08

Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18

SOT-26

Abstract: t06 sot 23 SOT26 upc2713t UPC1678G
Contextual Info: Wideband Amplifiers 'V - v î tigmr- U14mb ï* ' < *ttm • TTTV. - Vec V MIN | NF (dB) Icc (mA) TYP M A X TYP Gain (dB) MIN TYP M AX R L out (dB) (dB) TYP TYP PldB (dBm) TYP ISO L (dB) TYP «<* «04» ¿¡SSL 4 •1 * J ! '. UPC1675G 1900 5 12 17 22 5.5

Contextual Info: 1.7 GHz MEDIUM POWER BROADBAND SILICON M M IC AMPLIFIER upG1677C UpG1677p UPC1677C INSERTION GAIN vs. FREQUENCY FEATURES_ • HIGH POWER OUTPUT: +19.5 dBm V C C -5 V • EXCELLENT FREQUENCY RESPONSE: 1.7 GHz TYP at 3 dB Down 40 30 • HIGH POWER GAIN: 24 dBtyp at 0.5 GHz

UPC1678B

Abstract: UPC167 UPC1678
Contextual Info: UPC1678B UPC1678G UPC1678P 1.9 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE FEATURES • HIGH OUTPUT POWER: +18 dBm • EXCELLENT FREQUENCY RESPONSE: 1.9 GHz TYP at 3 dB Down • HIGH POWER GAIN: 23 dB TYP at 500 MHz

C1A MARKING

Abstract: c1a c1b c1c marking C1C NE68139 NE02139 NE68839 MARKING r4 ne85639 R47 marking NE68039
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 +0.10 0.4 -0.05 LEADS 2, 3, 4 2 2.9 ± 0.2 0.95 3 1.9 0.85 4 1 +0.10 0.6 -0.05 +0.2 1.1 -0.1 0.8 0.16 +0.10

upc1678

Abstract: UPC1678B
Contextual Info: 1.9 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER UPC1678G UPci678P UPC1678G NOISE FIGURE vs. FREQUENCY FEATURES_ • HIGH OUTPUT P O W E R :+18 dBm V cc • 5 V • EXCELLENT FREQUENCY RESPONSE: 1.9 GHz TYP at 3 dB Down • HIGH POWER GAIN: 23 dB TYP at 0.5 GHz