TSOP 54 PIN Search Results

TSOP 54 Package

Abstract: TSOP 54 PIN 54-PIN TSOP II 54 Package
Contextual Info: THIN SMALL OUTLINE L-LEADED PACKAGE 54 PIN PLASTIC FPT-54P-M01 54-pin plastic TSOP II Lead pitch 0.80mm Package width 500mil Lead shape Gullwing Sealing method Plastic mold (FPT-54P-M01) * : Resin protrusion. (Each side : 0.15 (.006) Max) 54-pin plastic TSOP (II)

MT48LC16M8A2BB

Contextual Info: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • Plastic package – OCPL2 – 54-pin TSOP II 400 mil – 54-pin TSOP II (400 mil) Pb-free

TSOP 54 Package

Abstract: TSOP 54 Package used in where TSOP 54 PIN TSOP II 54 Package TSOP 54 II 54-PIN
Contextual Info: THIN SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 54 PIN PLASTIC To Top / Package Lineup / Package Index FPT-54P-M01 54-pin plastic TSOP II Lead pitch 0.80 mm Package width 500 mil Lead shape Gullwing Sealing method Plastic mold (FPT-54-M01)

TSOP 54 Package

Abstract: TSOP 54 Package used in where 54-PIN TSOP 54 PIN
Contextual Info: THIN SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 54 PIN PLASTIC To Top / Package Lineup / Package Index FPT-54P-M02 54-pin plastic TSOP II Lead pitch 0.80 mm Package width 400 mil Lead shape Gullwing Sealing method Plastic mold (FPT-54P-M02)

TSOP 86 Package

Abstract: TSOP 54 tray TSOP package tray TSOP 54 Package TSOP 54 PIN TSOP 66 Package JEDEC tray standard tsop TSOP II 54 Package tsop 66 tsop package
Contextual Info: TRAY CONTAINER UNIT : mm HEAT PROOF PRE 7 112.0 NEC 135° MAX. A' 11.8 14.00 12.00 TSOP 2 400MIL22 135.9 9¥12=108 A 24.70 21.70 21.8 271.7 315.0 (322.6) SECTION A – A' 5.62 7.62 (6.35) 21.80 16.50 Applied Package Quantity (pcs) Material 54-pin • Plastic TSOP(II)

Contextual Info: GMM27317230ATG LG Semicon Co.,Ltd. Description 16,777,216 WORDS x72BIT SYNCHRONOUS DYNAMIC RAM MODULE Features The GMM27317230ATG is a 16M x 72bits Synchronous Dynamic RAM MODULE which is assembled 9 pieces of 16M x 8bits Synchronous DRAMs in 54 pin TSOP II

Contextual Info: GMM27333230ATG LG S em icon C o .,L td. 33,554,432 WORDS x72BIT SYNCHRONOUS DYNAMIC RAM MODULE Description The GMM27333230ATG is a 32M x 72bits Synchronous Dynamic RAM MODULE which is assembled 18 pieces of 32M x 4bits Synchronous DRAMs in 54 pin TSOP II, 2

AS4SD4M16DG-8IT

Contextual Info: SDRAM AS4SD4M16 4 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory FEATURES 54-Pin TSOP • Full Military temp (-55°C to 125°C) processing available • Copper lead frame option for enhanced reliability • WRITE Recovery ( tWR/ tDPL) tWR = 2 CLK

Marking DG

Contextual Info: SDRAM AS4SD16M16 Preliminary Austin Semiconductor, Inc. 256 MB: 16 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory 54-Pin TSOP FEATURES • Configuration: 16 Meg x 16 (4 Meg x 16 x 4 banks) • Fully synchronous; all signals registered on positive

Contextual Info: GMM26417233ATG LG S em icon C o .,L td. 16,777,216 WORDS x64bit SYNCHRONOUS DYNAMIC RAM MODULE Description Features The GMM26417233ATG is a 16M x 64bits Synchronous Dynamic RAM MODULE which is assembled 8 pieces of 16M x 8bits Synchronous DRAMs in 54 pin TSOP II

BQ11

Contextual Info: AUSTIN SEMICONDUCTOR, INC. AS4SD4M16 4MEGX 16 SDRAM SYNCHRONOUS DRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View •MIL-STD-883 54-Pin TSOP FEATURES • Extended Testing Over -55° to +125° C also available @ Industrial Temp -40° to 85° C

Contextual Info: SDRAM AS4SD4M16 4 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory FEATURES 54-Pin TSOP • Full Military temp (-55°C to 125°C) processing available • WRITE Recovery ( tWR/ tDPL) tWR = 2 CLK • Fully synchronous; all signals registered on positive

GMM26416233ENTG

Abstract: PC133-SDRAM
Contextual Info: 16Mx64 bits PC100/PC133 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh GMM26416233ENTG Description The GMM26416233ENTG is a 16M x 64bits Synchronous Dynamic RAM MODULE which is assembled 16 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II

GMM27316233ENTG

Abstract: PC133-SDRAM
Contextual Info: 16Mx72 bits PC100/PC133 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh GMM27316233ENTG Description The GMM27316233ENTG is a 16M x 72bits Synchronous Dynamic RAM MODULE which is assembled 18 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II

samsung capacitance year code

Contextual Info: Industrial Synchronous DRAM K4S561632J 256Mb J-die SDRAM Specification 54 TSOP-II with Pb-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: GMM27316230ETG LG S em icon C o .,L td. 16,777,216 WORDS x72BIT SYNCHRONOUS DYNAMIC RAM M ODULE Description The GMM27316230ETG is a 16M x 72bits Synchronous Dynamic RAM MODULE which is assembled 18 pieces of 16M x 4bits Synchronous DRAMs in 54 pin TSOP II, 2

GMM2739230EPTG

Abstract: RSA 2048-bit
Contextual Info: 8Mx72 bits PC100/PC133 SDRAM Registered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh GMM2739230EPTG Description Features The GMM2739230EPTG is a 8M x 72bits Synchronous Dynamic RAM MODULE which is assembled 9 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II

Contextual Info: SDRAM AS4SD32M16 Austin Semiconductor, Inc. 512Mb: 32 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory 54-Pin TSOP FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 32 Meg x 16 (8 Meg x 16 x 4 banks)

Contextual Info: SDRAM AS4SD16M16 Austin Semiconductor, Inc. 256 MB: 16 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory 54-Pin TSOP FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 16 Meg x 16 (4 Meg x 16 x 4 banks)

GMM2649233EFTG

Abstract: PC133-SDRAM GMM2649233
Contextual Info: 8Mx64 bits PC100/PC133 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh GMM2649233EFTG Description The GMM2649233EFTG is a 8M x 64bits Synchronous Dynamic RAM MODULE which is assembled 8 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II

C1450

Abstract: GMM2649233ETG PC133-SDRAM
Contextual Info: 8Mx64 bits PC100/PC133 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh GMM2649233ETG Description The GMM2649233ETG is a 8M x 64bits Synchronous Dynamic RAM MODULE which is assembled 8 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II

Contextual Info: GMM2739233ETG LG S em icon C o .,L td. 8,388,608 WORDS x72BIT SYNCHRONOUS DYNAMIC RAM M ODULE Features Description The GMM2739233ETG is a 8M x 72bits Synchronous Dynamic RAM MODULE which is assembled 9 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II

TSOP 54 PIN

Contextual Info: PACKAGING INFORMATION Plastic TSOP 54–Pin, 86-Pin Package Code: T Type II N N/2+1 Notes: 1. Controlling dimension: millimieters, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D and E1 do not include mold flash protrusions and should be

M390S3253HU1

Contextual Info: 256MB, 512MB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 256Mb H-die 54 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.