TSOP 54 PACKAGE Search Results

TSOP 54 Package

Abstract: TSOP 54 PIN 54-PIN TSOP II 54 Package
Contextual Info: THIN SMALL OUTLINE L-LEADED PACKAGE 54 PIN PLASTIC FPT-54P-M01 54-pin plastic TSOP II Lead pitch 0.80mm Package width 500mil Lead shape Gullwing Sealing method Plastic mold (FPT-54P-M01) * : Resin protrusion. (Each side : 0.15 (.006) Max) 54-pin plastic TSOP (II)

TSOP 54 Package

Abstract: TSOP 54 Package used in where 54-PIN TSOP 54 PIN
Contextual Info: THIN SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 54 PIN PLASTIC To Top / Package Lineup / Package Index FPT-54P-M02 54-pin plastic TSOP II Lead pitch 0.80 mm Package width 400 mil Lead shape Gullwing Sealing method Plastic mold (FPT-54P-M02)

samsung capacitance year code

Contextual Info: Industrial Synchronous DRAM K4S561632J 256Mb J-die SDRAM Specification 54 TSOP-II with Pb-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

M390S3253HU1

Contextual Info: 256MB, 512MB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 256Mb H-die 54 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: 512MB, 1GB Unbuffered SODIMM DDR SDRAM DDR SDRAM Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb F-die 66 TSOP-II & 54 sTSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

K4S560832G

Abstract: M366S1654HUS K4S561632H
Contextual Info: 128MB, 256MB, 512MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 256Mb H-die 54 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: ESMT M12L64164A Revision History Revision 1.0 13 Dec. 2001 - Original Revision 1.1 (10 Jan. 2002) - Add -6 spec Revision 1.2 (30 Jan. 2002) - Delete Page44 PACKING DIMENSION 54-LEAD TSOP(II) SDRAM (400mil) (1:4). Revision 1.3 (26 Apr. 2002) - tRFC : 60ns. (Page5)

M470L6524FL0

Abstract: M470L2923F60
Contextual Info: 512MB, 1GB Unbuffered SODIMM DDR SDRAM DDR SDRAM Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb F-die 66 TSOP-II & 54 sTSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

b1a12

Abstract: B1A10 K4S1G0632D K4S510832d K4S1G0632 B1A0
Contextual Info: 1GB, 2GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 512Mb D-die 54 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

EDS2516AFTA-75-E

Abstract: EDS2516AFTA EDS2516AFTA-6B-E
Contextual Info: DATA SHEET 256M bits SDRAM EDS2516AFTA 16M words x 16 bits Specifications Pin Configurations • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package: 54-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 3.3V ± 0.3V

UG416S6448JSG

Abstract: BA1A11
Contextual Info: UG416S6448JSG 128M Bytes 16M x 64 SDRAM 144Pin SODIMM based on 16M x 8 General Description Features The UG416S6448JSG is a 16,777,216 bits by 64 Synchronous DRAM module .The UG416S6448JSG is assembled using 8 pcs of 16M x 8 4k refresh Synchronous DRAMs in 54 pin TSOP packages

Contextual Info: GMM26416233ENTG LG S em icon C o .,L td. 16,777,216 WORDS x64bit SYNCHRONOUS DYNAMIC RAM M ODULE Description The GMM26416233ENTG is a 16M x 64bits Synchronous Dynamic RAM MODULE which is assembled 16 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM

Contextual Info: GMM27333230ATG LG S em icon C o .,L td. 33,554,432 WORDS x72BIT SYNCHRONOUS DYNAMIC RAM MODULE Description The GMM27333230ATG is a 32M x 72bits Synchronous Dynamic RAM MODULE which is assembled 18 pieces of 32M x 4bits Synchronous DRAMs in 54 pin TSOP II, 2

EDS1216AGTA-6B-E

Abstract: EDS1216AGTA
Contextual Info: PRELIMINARY DATA SHEET 128M bits SDRAM EDS1216AGTA 8M words x 16 bits Specifications Pin Configurations • Density: 128M bits • Organization  2M words × 16 bits × 4 banks • Package: 54-pin plastic TSOP (II)  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 3.3V ± 0.3V

AS4SD4M16DG-8IT

Contextual Info: SDRAM AS4SD4M16 4 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory FEATURES 54-Pin TSOP • Full Military temp (-55°C to 125°C) processing available • Copper lead frame option for enhanced reliability • WRITE Recovery ( tWR/ tDPL) tWR = 2 CLK

tcl 14175

Abstract: K4S641632N
Contextual Info: K4S641632N Industrial Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Lead-Free and Halogen-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Marking DG

Contextual Info: SDRAM AS4SD16M16 Preliminary Austin Semiconductor, Inc. 256 MB: 16 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory 54-Pin TSOP FEATURES • Configuration: 16 Meg x 16 (4 Meg x 16 x 4 banks) • Fully synchronous; all signals registered on positive

Contextual Info: GMM27317233ATG LG S em icon C o .,L td. 16,777,216 WORDS x72BIT SYNCHRONOUS DYNAMIC RAM MODULE Description The GMM27317233ATG is a 16M x 72bits Synchronous Dynamic RAM MODULE which is assembled 9 pieces of 16M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM in 8pin

GMM26416233ENTG

Abstract: PC133-SDRAM
Contextual Info: 16Mx64 bits PC100/PC133 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh GMM26416233ENTG Description The GMM26416233ENTG is a 16M x 64bits Synchronous Dynamic RAM MODULE which is assembled 16 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II

GMM27316233ENTG

Abstract: PC133-SDRAM
Contextual Info: 16Mx72 bits PC100/PC133 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh GMM27316233ENTG Description The GMM27316233ENTG is a 16M x 72bits Synchronous Dynamic RAM MODULE which is assembled 18 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II

AS4SD16M16

Contextual Info: SDRAM AS4SD16M16 Austin Semiconductor, Inc. 256 MB: 16 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory 54-Pin TSOP FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 16 Meg x 16 (4 Meg x 16 x 4 banks)

Contextual Info: K4S560432J K4S560832J K4S561632J Synchronous DRAM 256Mb J-die SDRAM Specification 54 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

M366S3323IUS

Abstract: K4S280832i
Contextual Info: 64MB, 128MB, 256MB Unbuffered DIMM Synchronous DRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 128Mb I-die 64/72-bit Non ECC/ECC 54 TSOP-II with Pb-Free RoHS compliant Revision 1.1 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

UG432S6488KSG

Abstract: BA1A11
Contextual Info: UG432S6488KSG 256M Bytes 32M x 64 SDRAM 144Pin SODIMM based on 32M x 8 General Description Features The UG432S6488KSG is a 33,554,432 bits by 64 Synchronous DRAM module . The UG432S6488KSG is assembled using 8 pcs of 32M x 8 8k refresh Sync DRAMs in 54 pin TSOP packages mounted on 144 pin