TSOP 54 PACKAGE Search Results

TSOP 54 Package

Abstract: TSOP 54 PIN 54-PIN TSOP II 54 Package
Contextual Info: THIN SMALL OUTLINE L-LEADED PACKAGE 54 PIN PLASTIC FPT-54P-M01 54-pin plastic TSOP II Lead pitch 0.80mm Package width 500mil Lead shape Gullwing Sealing method Plastic mold (FPT-54P-M01) * : Resin protrusion. (Each side : 0.15 (.006) Max) 54-pin plastic TSOP (II)

MT48LC16M8A2BB

Contextual Info: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • Plastic package – OCPL2 – 54-pin TSOP II 400 mil – 54-pin TSOP II (400 mil) Pb-free

TSOP 54 Package

Abstract: TSOP 54 Package used in where TSOP 54 PIN TSOP II 54 Package TSOP 54 II 54-PIN
Contextual Info: THIN SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 54 PIN PLASTIC To Top / Package Lineup / Package Index FPT-54P-M01 54-pin plastic TSOP II Lead pitch 0.80 mm Package width 500 mil Lead shape Gullwing Sealing method Plastic mold (FPT-54-M01)

TSOP 54 Package

Abstract: TSOP 54 Package used in where 54-PIN TSOP 54 PIN
Contextual Info: THIN SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 54 PIN PLASTIC To Top / Package Lineup / Package Index FPT-54P-M02 54-pin plastic TSOP II Lead pitch 0.80 mm Package width 400 mil Lead shape Gullwing Sealing method Plastic mold (FPT-54P-M02)

TSOP 86 Package

Abstract: TSOP 54 tray TSOP package tray TSOP 54 Package TSOP 54 PIN TSOP 66 Package JEDEC tray standard tsop TSOP II 54 Package tsop 66 tsop package
Contextual Info: TRAY CONTAINER UNIT : mm HEAT PROOF PRE 7 112.0 NEC 135° MAX. A' 11.8 14.00 12.00 TSOP 2 400MIL22 135.9 9¥12=108 A 24.70 21.70 21.8 271.7 315.0 (322.6) SECTION A – A' 5.62 7.62 (6.35) 21.80 16.50 Applied Package Quantity (pcs) Material 54-pin • Plastic TSOP(II)

Contextual Info: GMM27317230ATG LG Semicon Co.,Ltd. Description 16,777,216 WORDS x72BIT SYNCHRONOUS DYNAMIC RAM MODULE Features The GMM27317230ATG is a 16M x 72bits Synchronous Dynamic RAM MODULE which is assembled 9 pieces of 16M x 8bits Synchronous DRAMs in 54 pin TSOP II

samsung capacitance year code

Contextual Info: Industrial Synchronous DRAM K4S561632J 256Mb J-die SDRAM Specification 54 TSOP-II with Pb-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

TSOP 54 PIN

Contextual Info: PACKAGING INFORMATION Plastic TSOP 54–Pin, 86-Pin Package Code: T Type II N N/2+1 Notes: 1. Controlling dimension: millimieters, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D and E1 do not include mold flash protrusions and should be

M390S3253HU1

Contextual Info: 256MB, 512MB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 256Mb H-die 54 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: 512MB, 1GB Unbuffered SODIMM DDR SDRAM DDR SDRAM Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb F-die 66 TSOP-II & 54 sTSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

K4S560832G

Abstract: M366S1654HUS K4S561632H
Contextual Info: 128MB, 256MB, 512MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 256Mb H-die 54 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: ESMT M12L64164A Revision History Revision 1.0 13 Dec. 2001 - Original Revision 1.1 (10 Jan. 2002) - Add -6 spec Revision 1.2 (30 Jan. 2002) - Delete Page44 PACKING DIMENSION 54-LEAD TSOP(II) SDRAM (400mil) (1:4). Revision 1.3 (26 Apr. 2002) - tRFC : 60ns. (Page5)

M470L6524FL0

Abstract: M470L2923F60
Contextual Info: 512MB, 1GB Unbuffered SODIMM DDR SDRAM DDR SDRAM Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb F-die 66 TSOP-II & 54 sTSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

K4H511638D

Abstract: M470L3324DU0
Contextual Info: 256MB, 512MB, 1GB Unbuffered SODIMM Preliminary DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

Contextual Info: Preliminary Rev. 0.0 ,„ c . „ LG Semicon Co.,Ltd. Description The GMM2735233CTG is a 4M x 72bits Synchronous Dynamic RAM MODULE w hich is assembled 5 pieces o f 4M x 16bits Synchronous DRAMs in 54 pin TSOP I! package and one 2048 bit EEPROM in 8pin TSSOP

EDS2516AFTA-75-E

Abstract: EDS2516AFTA EDS2516AFTA-6B-E
Contextual Info: DATA SHEET 256M bits SDRAM EDS2516AFTA 16M words x 16 bits Specifications Pin Configurations • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package: 54-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 3.3V ± 0.3V

UG416S6448JSG

Abstract: BA1A11
Contextual Info: UG416S6448JSG 128M Bytes 16M x 64 SDRAM 144Pin SODIMM based on 16M x 8 General Description Features The UG416S6448JSG is a 16,777,216 bits by 64 Synchronous DRAM module .The UG416S6448JSG is assembled using 8 pcs of 16M x 8 4k refresh Synchronous DRAMs in 54 pin TSOP packages

Contextual Info: GMM26416233ENTG LG S em icon C o .,L td. 16,777,216 WORDS x64bit SYNCHRONOUS DYNAMIC RAM M ODULE Description The GMM26416233ENTG is a 16M x 64bits Synchronous Dynamic RAM MODULE which is assembled 16 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM

Contextual Info: GMM26433233ANTG LG S em icon C o .,L td. 33,554,432 WORDS x64bit SYNCHRONOUS DYNAMIC RAM M ODULE Description The GMM26433233ANTG is a 32M x 64bits Synchronous Dynamic RAM MODULE which is assembled 16 pieces of 16M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM

Contextual Info: GMM27333230ATG LG S em icon C o .,L td. 33,554,432 WORDS x72BIT SYNCHRONOUS DYNAMIC RAM MODULE Description The GMM27333230ATG is a 32M x 72bits Synchronous Dynamic RAM MODULE which is assembled 18 pieces of 32M x 4bits Synchronous DRAMs in 54 pin TSOP II, 2

EDS1216AGTA-6B-E

Abstract: EDS1216AGTA
Contextual Info: PRELIMINARY DATA SHEET 128M bits SDRAM EDS1216AGTA 8M words x 16 bits Specifications Pin Configurations • Density: 128M bits • Organization  2M words × 16 bits × 4 banks • Package: 54-pin plastic TSOP (II)  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 3.3V ± 0.3V

Contextual Info: 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb H-die 54 TSOP-II/sTSOP II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: GMM27316233ENTG LG S em icon C o .,L td. 16,777,216 WORDS x72BIT SYNCHRONOUS DYNAMIC RAM M ODULE Description The GMM27316233ENTG is a 16M x 72bits Synchronous Dynamic RAM MODULE which is assembled 18 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM

Contextual Info: GMM27333233ANTG LG S em icon C o .,L td. 33,554,432 WORDS x72BIT SYNCHRONOUS DYNAMIC RAM M ODULE Description The GMM27333233ANTG is a 32M x 72bits Synchronous Dynamic RAM MODULE which is assembled 18 pieces of 16M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM