TS06 Search Results

NE681

Abstract: S21E UPA822TF
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA822TF OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2.0 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm high • HIGH COLLECTOR CURRENT: IC MAX = 65 mA PACKAGE OUTLINE TS06

OF IC 7912

Abstract: pt 9795 on 5295 transistor nec 14312 transistor UPA831TF lb 11885 NE681 NE68130 NE856 S21E
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm LOW NOISE: Q1:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Package Outline TS06 2.1 ± 0.1 1.25 ± 0.1 Q2:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA

ts06 94V0

Abstract: c/ts06 94V0 ts06+94V0
Contextual Info: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Switches > Product Feature Selector > Product Details TS06 Product Details Live Product Chat DIP, Rotary DIP, SIP Switches and DIP Shunts Standard

5252 F 1005

Abstract: 5252 F 1114 UPA836TF NE685 NE688 S21E UPA833TF UPA836TF-T1 5942
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm LOW NOISE: Q1:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA Package Outline TS06 2.1 ± 0.1 Q2:NF = 1.7 dB TYP at f = 2 GHz, VCE = 1 V, lc = 3 mA

BA 7312

Abstract: ba 3822 ls NEC IC 5020 098 BA 6688 L em 6695 6 pin ic 6628 j 6815 transistor BA 5977 ha 13483 fr 3709
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA828TF OUTLINE DIMENSIONS Unit in mm LOW NOISE: P ackage O u tlin e TS06 (T o p View) NF = 1.3 dB TYP at f = 2 GHz, Vce = 2 V, Ic = 3 m A HIGH GAIN: |S 21 e |2 = 8.5 dB TYP at f = 2 GHz, V c e = 2 V, Ic = 20 m A

transistor d 13009

Abstract: 9622 transistor t 3866 power transistor
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA832TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: Package O utline TS06 (Top View) Q1 :NF = 1.2 dB TYP at f = 1 GHz, V ce = 3 V, Ic = 7 mA Q2:NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA

CD 5888 CB

Abstract: transistor BU 5027 CD 5888 ic cd 5220 buffer ic transistor d 13009 UPA831TF CD 5888 cb ic cd 4847 pa831
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA831TF FEATURES Units in mm OUTLINE DIMENSIONS LOW NOISE: Package Outline TS06 Q1:NF = 1.2 dB TYP at f = 1 GHz, V ce = 3 V, Ic = 7 mA Q2:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, Ic = 7 mA

ha 7741

Abstract: UPA833TF 13924 IC 7487
Contextual Info: NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA833TF OUTLINE DIMENSIONS Units in mm Package Outline TS06 LOW NOISE: Q1:NF = 1.7 dB TYP at f = 2 GHz, V ce = 1 V, Ic = 3 mA Q2:NF = 1.5 dB TYP at f = 2 GHz, Vce = 3 V, Ic = 3 mA HIGH GAIN: Q1: IS21 EI2 = 3.5 dB TYP at f = 2 GHz, Vce = 1 V,

ta 8268 ah

Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Package Outline TS06 i«*— — HIGH GAIN: 2 . 1 ± 0 . 1 - - - * — 1 .2 5 ± 0 . 1 - * - IS 21 El2 = 9 .0 dB T Y P at f = 1 G H z, V c e = 3 V, Ic = 7 mA

SM 3119 N

Abstract: 6681 - 250
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA835TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: Package Outline TS06 Q1 :NF = 1.5 dB T Y P at f = 2 G Hz, V c e = 3 V, Ic = 3 mA 2.1 ± 0.1 Q 2:N F = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA

All similar transistor

Abstract: NE688 S21E UPA809TF transistor outline package 3 8003* transistor
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm high • UPA809TF PACKAGE OUTLINE TS06 (Top View) 2.1 ± 0.1 1.25 ± 0.1

7483 IC

Abstract: NE685 NE68530 NE856 NE85630 S21E UPA832TF UPA832TF-T1 UPA835TF IC 566 vco
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm LOW NOISE: Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Package Outline TS06 (Top View) 2.1 ± 0.1 1.25 ± 0.1 Q2:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA

NE856

Abstract: S21E UPA801TF
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801TF OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2.0 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm high • HIGH COLLECTOR CURRENT: IC MAX = 100 mA PACKAGE OUTLINE TS06

IC 7448

Abstract: pin configuration of 7496 IC UPA827TF pin configuration ic 7448 pin configuration NPN transistor 9013 npn NE686 S21E UPA827TF-T1-A 8 pin ic 3842 NEC 14324
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • UPA827TF OUTLINE DIMENSIONS Units in mm HIGH GAIN WITH LOW OPERATING CURRENT: |S21E|2 = 9 dB TYP at f = 2 GHz, VCE = 2 V, lc = 7 mA Package Outline TS06 (Top View) 2.1 ± 0.1 |S21E|2 = 8.5 dB TYP at f = 2 GHz, VCE = 1 V, lc = 5 mA

phillip

Abstract: N7E50-E516XX-30
Contextual Info: 3M Device to Board Copper Connectors .050″ Mating and Accessory Charts CompactFlasht Headers Accessories1 CF Type One Two 1Use a Ejector Part Number Technical Sheets N7E50-7516XX-20 N7E50 7516XX 20 N7E50-A516XX-20 TS0662 N7E50 A516XX 30 N7E50-A516XX-30

MJE 13031

Abstract: 054S1 cd 4637
Contextual Info: PRELIMINARY DATA SHEET UPA836TF NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm LOW NOISE: Package O utline TS06 (Top View) Q1 :NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA Q2:NF = 1.7 dB TYP at f = 2 GHz, V ce = 1 V, Ic = 3 mA

ta 8653 n

Abstract: ha 1452 Amplifiers" ha 1452 Amplifiers IC 8208 HA 12045 ic MAX 8997
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA835TF OUTLINE DIMENSIONS Units in mm LOW NOISE: Package O utline TS06 Q1 :NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA — Q2.NF = 1.2 dB TYP at f = 1 GHz, Vce = 3 V, Ic = 7 mA

ka 2843

Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA835TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: P a ckage O u tlin e TS06 Q1 :NF = 1.5 dB T Y P at f = 2 G Hz, V c e = 3 V, Ic = 3 mA 2.1 ± 0 .1 Q 2:N F = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA

Contextual Info: ATTENUATOR TS06XXF SMT 200 mW DATA SHEET SHEET 1 OF 3 Dwg TS06XXF PART SERIES: TS06XXF FEATURES EN 13-2399 Revision - APPLICATIONS Small Footprint High Power Surface Mount Low VSWR Easy Installation Wide Attenuation Offering Mobile Networks Broadcast High Power Amplifiers

Um 3562

Abstract: IC 7487 UPA833TF 263 7660 ic 7421 transistor M 9741 NT 2955 ON transistor FA 5323 IC 7431 ha 7741
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • UPA833TF OUTLINE DIMENSIONS Units in mm Package O utline TS06 LOW NOISE: +— Q1 :NF = 1.7 dB T Y P at f = 2 G Hz, V c e = 1 V, Ic = 3 mA 2.1 ± 0.1 —

UPA833TF

Abstract: transistor MJE 2955 uP 6308 AD
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm Package Outline TS06 LOW NOISE: +— Q1 :NF = 1.7 dB TYP at f = 2 GHz, V c e = 1 V, Ic = 3 mA 2.1 ± 0.1 — ► 1.25±0.1-^

EM 4093 007

Abstract: nec 14312 transistor
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA834TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: Package Outline TS06 Q1 :NF = 1.4 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA Q 2:N F = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V , Ic = 7 mA

transistor d 13009

Abstract: IC 566 vco transistor j 13009 IC 8085 pin
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm LOW NOISE: Package Outline TS06 Q 1:N F= 1.2 dB TYP a tf = 1 GHz, VCE = 3 V, Ic = 7 mA 2.1 ±0.1 j'•*— 1.25 ± 0.1 -*■

transistor d 13009

Abstract: transistor ap 7686 ic 7483 ap 6928
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA832TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: Package Outline TS06 Q1 :NF = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA 2.1 ± 0.1 ► 1.25 ± 0.1 - * j Q 2:N F = 1.5 dB T Y P at f = 2 G Hz, V c e = 3 V, Ic = 3 mA