TRANSISTORS BC 23 Search Results

C 548 B

Abstract: B549C BC650 C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B C547B TRANSISTOR BC 550 c transistor c 548
Contextual Info: asc D • fi 23S hü S Q Q Q m S Q T M S I E G _ T - 2~ 9 ~ Z / NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENGESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 550 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and

bc 357 transistor

Abstract: transistor BC 55 bc 106 transistor transistor bc 102 bc 103 transistor transistor C238 TRANSISTOR BC 237 TRANSISTOR BC 239 c bc 330 transistor TRANSISTOR BC
Contextual Info: * BC 237 BC 238 BC 239 "RANSISTORS NPN SILIC IU M , PLANAR EP ITAXIAUX IPN SILIC O N TRANSISTORS, E P IT A X IA L PLAN A R Preferred device D is p o s itif recommandé 3C 237 and BC 238 transistors are intended for ise in audio frequency preamplifier and driver

BC308

Abstract: bc307 siemens BC307 bc307a BC 309 BC307B Q62702-C285 BC 307 BC309C bc 374
Contextual Info: SIEMENS 51E D • flE35bD5 004155b 5T1 « S I E G SIEMENS AKTIENGESELLSCHAF " p 2 -*n -z i PNP Silicon AF Transistors BC 307 . BC 309 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 237, BC 238, BC 239 NPN

BC639

Abstract: r 639 r 640 BC 639 bc635 BC637 JEDECTO-92 bc 640 BC 137 complementary 637 638 BC 138
Contextual Info: BC 635 • BC 637 • BC 639 Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: Kom plem entäre NF-Treiberstufen. K om plernentärtypen zu BC 636/BC 638/BC 640 Applications: For com plem entary AF driver stages.

bc237 siemens

Abstract: BC238 BC239 BC237 237B C307B C238C C237B marking CODE 50G TO92 C-239
Contextual Info: SIE » • SIEMENS flS35bQS G041540 134 « S I E G SIEMENS AKTIENGESELLSCHAF BC 237 . BC 239 NPN Silicon AF Transistors • High current gain • Low collector-emitter saturation voltage • Complementary types: B C 307, B C 308, BC 309 PNP Type BC BC

BC640

Abstract: bc636 bc 637 bc 640 bc 141 BC 638 r 639 r 640 bc638 bc 106 BC 143
Contextual Info: BC 636 • BC 638 • BC 640 Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: Kom plem entäre NF-Treiberstufen. K om plernentärtypen zu BC 635/BC 637/BC 639 Applications: For com plem entary AF driver stages.

transistors BC 23

Abstract: 14 SOT-23 sot-23 ce 110 sot 23 SOT-23 BSS sot-23 npn BCW60 BCW65 BCX41 BCX55
Contextual Info: AF transistors M axim um ratings PNP = P NPN = N V Kdeo BC 817 BC 818 BC 846 BC 847 BC 848 BC 849 BC 850 N N N N N N N BC 807 BC 808 BC 856 BC 857 BC 858 BC 859 BC 860 P P P P P P P BCW60 BCW65 BCW 66 BCX41 BCX 54 BCX55 BCX 56 BCX 68 BCX 70 N N N N N N N N

fr 309

Abstract: BC307 BC177 BC179 BC 179 BC308 BC 307 bc 308 BC309 tfk 731
Contextual Info: BC 177 • BC 178 • BC179 BC 307 - BC 308 • BC 309 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and d river stages Besondere Merkmale: Features: • BC 179, BC 309 fü r rauscharm e Vorstufen

BU 808 DX

Abstract: ei50 bu 808 df 3AR 3ER 3FR BB 4130 BC860 BCV26 T3 BCV26 BCV46 BCW29
Contextual Info: /T T SGS-THOMSON SURFACE MOUNT DEVICES Ä 7# U D M iyiC TM Ö tgS GENERAL PURPOSE & INDUSTRIAL PNP GENERAL PURPOSE TRANSISTORS Vc e O 'c ptot hFE 'C LU VcBO O > Type / Iß max VCES* BC 807-16 BC 807-25 BC 807-40 BC 808-16 BC 808-25 BC 808-40 BC 856 A BC 856 B

TRANSISTOR BC 448

Abstract: BC448 transistors BC 446 TRANSISTOR BC 450 pnp BC446 BC450
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC 446, A, B BC 448, A, B BC 450, A, B TO-92 Plastic Package General Purpose High Voltage Transistors.

transistor BC 153

Abstract: transistor C719 TRANSISTOR C236 TRANSISTOR BC 141 transistor BC SERIES TRANSISTOR BC 140 transistor BC 153 a TRANSISTOR BC140 c236 transistor BC transistor series
Contextual Info: ESC » m ö23SbQS 0Q043.04 2 « S I E G , NPN Silicon Transistors SIEMENS AKTIENGESELLSCHÂF 3c 140 BC 141 BC 140 and BC 141 are epitaxial NPN silicon transistors in TO 39 case 5 C 3 OIN 41873 . The collector is electrically connected to the case. The transistors are intended for use in AF

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package General Purpose Transistors Deisgned For Small Signal Amplification

transistors BC 183

Abstract: TR BC 238 BC Transistors h21E BC 182 TR BC 237 B bc 237 BC174 BC213A BC307A
Contextual Info: general purpose transistors — plastic case transistors usage général — boîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maxim um ratings Type PNP Ptot min BC 174 BC 174 A BC 174 B mW (V) 300 64 / lc h21E VcEO h21 e * max (mA) 125* 110 200

transistors BC 446

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC 446, A, B BC 448, A, B BC 450, A, B TO-92 Plastic Package General Purpose High Voltage Transistors. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

TFK BC

Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
Contextual Info: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:

BC154

Abstract: BC153 transistor BC 153 BC 154 transistors BC 225 bc audio transistors IT 153 bc 153 bc154-1 18x10-4
Contextual Info: BC 153 BC 154 SILICON PLANAR PNP LOW-NOISE AUDIO AMPLIFIERS The BC 153 and BC 154 are silicon planar epitaxial PNP transistors in TO-18 epoxy package. They are specifically designed for use in low-noise audio preamplifiers. ABSOLUTE MAXIMUM RATINGS VcBO VcEO

BC109

Abstract: bc107 BC 107 BC108 bc 230 BC178 BC179 bc 750 BC-1096 bc audio transistors
Contextual Info: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOV/ NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC 107, BC 108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circu its of television receivers.

BC413

Abstract: AMI siemens BC414C N 413 af BC414 BC413C bc 580 BTB 700 siemens marking 411 414c
Contextual Info: SIE D SIEM EN S • A53Sba5 D041S64 4bb « S I E C SIEMENS AKTIENGESELLSCHAF NPN Silicon AF Transistors BC 413 BC 414 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 415, BC 416 PNP

BC208

Abstract: BC207 transistor bc 207 npn bc 207 npn BC209 BC-208-2 BC208 transistor bc 209 BC 230 BC209 transistor
Contextual Info: BC 207 BC 208 BC 209 SILICON PLANAR NPN GENERAL PURPOSE AUDIO AMPLIFIERS The BC207, BC 208 and BC 209 are silico n planar epitaxial NPN transistors in T O -18 epoxy package. They are intended fo r use in d rive r o r input stages of audio am plifier and in signal processing circu its o f TV receivers.

4856a

Abstract: Bc 247b 2SK34 2SK19 30A-GR 2N4393 2SK19-BL 2SK33 BF 246B 2sk to-92
Contextual Info: SEMICONDUCTORS INC DTE D | 013bbSD □□□D3G7 S | N-Channel Junction Field Effect Transistors GENERAL PURPOSE MAXIMUM RA TIN G S TYPE NO. C A SE BC BC BC BC 264A 264B 264C 264D BF BF BF BF BF BF 2N 2N 2N 2N 2N Yfs mmhos •d s s (mA Pd (mWI bvg ss (V)

ZO 109

Abstract: BC 107 BC109 bc107 bc 109 BC108 bc 108 zo 107 X10-4 bc 230
Contextual Info: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC 108 and ESC 109 are silico n planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circ u its of television receivers.

856B

Abstract: 858C
Contextual Info: BC 856 . BC 860 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung 1.3 ±0.1 2.5 max 3 Type Code SOT-23 TO-236 Weight approx. – Gewicht ca.

2N6218

Abstract: BC530 T1923 triac mw 137 BC532 BFW45 tr bc 337 393P BC394 BC533
Contextual Info: SE MIC ONDUCT ORS INC CHE D | fll3bbSG Q00D303 fi | T-^ High V oltage Transistors T YPE NO. t a. M A XIM U M R A T IN G S VCE SAT> H FE V C EO Pd (mW •c IC M " (m A) (V ) min « o a. C A SE BC 236 BC 285 BC 312 BC 393 BC394 N N N P N TO-106 TO-18 TO-39

BC114

Abstract: BC113 BC-114 bc 113 BC 114 transistor bc113 transistor BC113/Fairchild BC 114
Contextual Info: BC 113 BC 114 S IL IC O N PLANAR NPN HIGH GAIN, LOW NOISE AUDIO AMPLIFIERS The BC113 and BC 114 are silicon planar NPN transistors in TO-18 epoxy package. They are spe cifically designed for use in lo w -no ise audio pream plifiers. ABSOLUTE MAXIMUM RATINGS