TRANSISTOR POWER RATING 5W Search Results

C4935

Abstract: 2SC4935 C4935 Y 2SA1869
Contextual Info: 2SC4935 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4935 Power Amplifier Applications Unit: mm • Good hFE linearity • Complementary to 2SA1869 and 5-watt-output applications. Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating

ILA03N60

Abstract: ILB03N60 Q67040-S4627 SDP04S60 Infineon MOSFET 1000V
Contextual Info: ILB03N60 ^ LightMOS Power Transistor C • • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET

Q67040-S4628

Abstract: ic 5304 1a Q67040-S4626 ILA03N60 ILB03N60 ILD03N60 ILP03N60 IC 4043 configuration
Contextual Info: ILA03N60, ILP03N60 ILB03N60, ILD03N60 ^ LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET

L03N60

Abstract: PG-TO220-3-31 TRANSISTOR SMD MARKING CODE 1v mj 4043 Infineon MOSFET 1000V MS 25231 LAMP RG80 PG-TO-220-3-31 PG-TO25
Contextual Info: ILA03N60, ILP03N60 ILD03N60 ^ LightMOS Power Transistor C • • • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET

ILA03N60

Abstract: ILB03N60 ILD03N60 ILP03N60 Q67040-S4626 Q67040-S4628
Contextual Info: ILA03N60, ILP03N60 ILB03N60, ILD03N60 ^ LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET

882 transistor

Abstract: omni spectra sma transistor power rating 5w transistor 882 ATC100A mallory 25 uF capacitor data sheet PH2323-5 omni spectra fixture
Contextual Info: PH2323-5 CW Power Transistor 5W, 2.3 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • NPN silicon microwave power transistor • Common base configuration • Class C operation • Interdigitated geometry • Diffused emitter ballasting resistors

AD1990

Abstract: AD1992 AD1994 AD1996 AD1994ACPZ 12v 40W stereo amplifier resistor 10K 5w 5v 5W mono AMPLIFIER
Contextual Info: Class-D Audio Power Amplifier AD1990/AD1992/AD1994/AD1996 Preliminary Technical Data GENERAL DESCRIPTION Integrated Stereo Modulator & Power Stage 0.005% THD+N 101.5dB Dynamic Range PSRR > 65 dB RDS-ON < 0.3 Ω per transistor Efficiency > 80% @ 5W/6 Ω

PSOP-36

Abstract: AD199x 12v 40W mono amplifier 12v 4 channel AUDIO power AMPLIFIER AD1990 AD1992 AD1994 AD1996 5w stereo amplifier chip AD1994ACPZ
Contextual Info: Class-D Audio Power Amplifier AD1990/AD1992/AD1994/AD1996 Preliminary Technical Data GENERAL DESCRIPTION Integrated Stereo Modulator & Power Stage 0.005% THD+N 101.5dB Dynamic Range PSRR > 65 dB RDS-ON < 0.3 Ω per transistor Efficiency > 80% @ 5W/6 Ω

RF NPN POWER TRANSISTOR 3 GHZ 5w

Contextual Info: Æ an A M P com t pan y Radar Pulsed Power Transistor, 5W, 2|is Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-5S V 2 .0 0 Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

transistor c655

Abstract: 9225 npn transistor RF NPN POWER TRANSISTOR 3 GHZ 5w transistor power rating 5w TRANSISTOR A52 C655 13MM ATC100A PH2931-5M TT50
Contextual Info: AÚK.CA', M an A M P company Radar Pulsed Power Transistor, 5W, 100|is Pulse, 10% Duty 2.9-3.1 GHz PH2931-5M V2.00 Features • • • • • • • • ortn NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

transistor 1005 oj

Abstract: transistor power rating 5w ATC100A PH3135-5S PIN07
Contextual Info: M tiK O V . J r an A M P com pany Radar Pulsed Power Transistor, 5W, 2^s Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-5S V2.00 . .900 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry

transistor marking code H11S

Abstract: H11S marking CODE H11S rf transistor mar 8 RA05H9595M RA05H9595M-101 MOSFET Amplifier Module 150 mhz amplifier module 5w
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.

Contextual Info: TGF3020-SM 5W, 32V, 4 – 6 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Telemetry C-band radar Communications Test instrumentation Wideband amplifiers 5.8GHz ISM Functional Block Diagram Product Features • • • • • •

Contextual Info: T1G3000532-SM 5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

transistor power rating 5w

Abstract: DU2805S transistor Pout 5W B62152A
Contextual Info: e ec=.- = :-=s = = = -r-= =z r = an AMP company RF MOSFET 2 - 175 MHz Power Transistor, 5W, 28V DU2805S v2.00 Features l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Koise Figure Than Bipolar Devices

transistor marking code H11S

Abstract: H11S RA05H8693M RA05H8693M-101 marking CODE H11S
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H8693M RoHS Compliance,866-928MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H8693M is a 5watt RF MOSFET Amplifier Module that operate in the 866 to 928MHz range. The battery can be connected directly to the drain of the

CAPACITOR 1000pf

Abstract: TRIMMER capacitor 5-60 pF transistor MOSFET 924 ON
Contextual Info: A fa . M a n A M P c om pany RF MOSFET Power Transistor, 5W, 28V 2 -175 MHz DU2805S V2.00 Features • • • • • N-Channel Enhancement Mode Device DMOS Structure I-ower Capacitances for Broadband Operation High Saturated Output Power l.ower Noise Figure Than Bipolar Devices

Contextual Info: PH2931-5M Radar Pulsed Power Transistor 5W, 3.1-3.1 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

Contextual Info: w an A M P com pany Radar Pulsed Power Transistor, 5W, 2 j.s Pulse, 10% Duty 3 .1 -3 .5 GHz PH3135-5S 7JJ Features H i, • N P N S ilic o n M ic r o w a v e P o w e r T r a n s is to r • C o m m o n Base C o n fig u r a tio n • B ro a d b a n d C lass C O p e r a t io n

Contextual Info: PH2931-5M Radar Pulsed Power Transistor 5W, 2.9-3.1 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

Contextual Info: PH2729-5M Radar Pulsed Power Transistor 5W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

Contextual Info: Aflkm*A w an A M P com pany RF MOSFET Power Transistor, 5W, 28V 100 - 500 MHz UF2805B V2.00 Features • N-Channel Enh ancem en t Mode Device • DMOS Structure • Lower Capacitances for Broadband O peration • C om m on Source Configuration • Lower Noise Floor

Contextual Info: PH2731-5M Radar Pulsed Power Transistor 5W, 2.7-3.1 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

PH2729-5M

Abstract: PH2729
Contextual Info: PH2729-5M Radar Pulsed Power Transistor 5W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation