B62152A Search Results

transistor power rating 5w

Abstract: DU2805S transistor Pout 5W B62152A
Contextual Info: e ec=.- = :-=s = = = -r-= =z r = an AMP company RF MOSFET 2 - 175 MHz Power Transistor, 5W, 28V DU2805S v2.00 Features l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Koise Figure Than Bipolar Devices

siemens ferrite n22 p14

Abstract: Siemens Ferrite B65541 EC35 Siemens ferrite core ETD54 n62 U93 QUANTA ARALDITE ay 105 EC70 N27 Siemens Ferrite N47 EC52 N27 FERRITES N67
Contextual Info: Contents Page 5 Selector Guide Index of Part Numbers 11 25 SIFERRIT Materials 31 General - Definitions Application and Processing Notes Packing 103 121 163 Quality Considerations Standards and Specifications 177 181 RM Cores 185 PM Cores 287 P Cores P Core Halves P Cores for Proximity Switches

1455

Abstract: D1021UK
Contextual Info: TetraFET D1021UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 400MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J M I N • SUITABLE FOR BROAD BAND APPLICATIONS

ecg semiconductors master replacement guide

Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
Contextual Info: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei

siemens plc

Abstract: 24SWG enamelled copper wire D1013UK t4 and "0560" 24swg turns
Contextual Info: TetraFET D1013UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

B62152-A7-X30

Abstract: Epcos N30 Epcos N30 pulse transformer n30 epcos B62152-A27-X30 B62152-A4-X1 B62152 B62152-A1-X1 B62152-A27-X1 B62152-A4-X30
Contextual Info: Double-Aperture Cores B62152 Double aperture cores Primarily used for broadband transformers up to high frequencies Application examples • SIFERRIT material N30 for low frequencies and for pulse applications ■ SIFERRIT material K1 for matching transformers and baluns

Contextual Info: TetraFET D2210UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G

Contextual Info: TetraFET D1209UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 400MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F O FEATURES • SIMPLIFIED AMPLIFIER DESIGN H M I J N

Contextual Info: TetraFET D2203UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 12.5V – 1GHz PUSH–PULL B H C 2 3 G 1 A D E 5 4 F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N M O J K • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D1040UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 108MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN

t4 0560

Contextual Info: TetraFET D1013UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

t4 and "0560"

Abstract: 2626
Contextual Info: TetraFET D2203UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 12.5V – 1GHz PUSH–PULL B H C 2 3 G 1 A D E 5 4 F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N M O J K • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D2021UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 28V – 1GHz SINGLE ENDED H K FEATURES M L J E F • SIMPLIFIED AMPLIFIER DESIGN G SO8 PACKAGE

Contextual Info: TetraFET D1021UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 400MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES O • SIMPLIFIED AMPLIFIER DESIGN H M I J N • SUITABLE FOR BROAD BAND APPLICATIONS

064R

Abstract: D1027UK coaxial storm products
Contextual Info: TetraFET D1027UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

UT85 coax

Abstract: b621 D1022UK
Contextual Info: TetraFET D1022UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL A C B 2 pls 3 2 K 1 E D 5 4 G (4 pls) F FEATURES O • SIMPLIFIED AMPLIFIER DESIGN H I J M N • SUITABLE FOR BROAD BAND APPLICATIONS

25 ohm semirigid

Abstract: D1207 3171 s M 4 3171 D1207UK pd 3171 enamelled copper wire 3171 semelab coax
Contextual Info: TetraFET D1207UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 400MHz PUSH–PULL B H C G 2 3 1 A D E 5 4 F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N M J O K • SUITABLE FOR BROAD BAND APPLICATIONS

D1014UK

Abstract: 4049 G200 20swg VG13 VG10
Contextual Info: TetraFET D1014UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

B62152

Abstract: B62152-A7-X30 B62152-A8-X1 B62152-A1-X1 siferrit N30 siferrit material siferrit B62152-A4-X1 B62152-A4-X30 B62152-A7-X1
Contextual Info: Double-Aperture Cores B62152 Primarily used for broadband transformers up to high frequencies Application examples ● SIFERRIT material N30 for low frequencies and for pulse applications ● SIFERRIT material K1 for matching transformers and baluns up to about 250 MHz in antenna feeders or

Contextual Info: TetraFET D1022UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL A C B 2 pls 3 2 K 1 E D 5 4 G (4 pls) F FEATURES O • SIMPLIFIED AMPLIFIER DESIGN H I J M N • SUITABLE FOR BROAD BAND APPLICATIONS

D1013UK

Abstract: 24swg
Contextual Info: TetraFET D1013UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 500MHz SINGLE ENDED C 2 N ty p 1 A B 3 D ( 2 p ls ) F ( 2 p ls ) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

B62152A7X17

Abstract: B62152A8X17 B62152-A7-X1
Contextual Info: Double-Aperture Cores P rim a rily fo r b ro a d b a n d tra n s fo rm e rs up to high fre q u e n c ie s Application examples: Material N 30 for low frequencies and for pulse applications M aterial K 1 for m atching transform ers and balancing mixers up to approx. 2 5 0 M H z

a7x transistor

Abstract: D2004UK
Contextual Info: TetraFET D2004UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J M I N • SUITABLE FOR BROAD BAND APPLICATIONS

sWG 24 copper wire

Abstract: 27 swg enamelled copper wire 49 swg enamelled copper wire k 1413 FET a7x transistor D2013UK
Contextual Info: TetraFET D2013UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 1GHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J M I N • SUITABLE FOR BROAD BAND APPLICATIONS