ILB03N60 Search Results
ILB03N60 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| ILB03N60 | Infineon Technologies | IGBT Chip, N Channel, 600V, TO-263, 3-Pin | Original | 269.5KB | 13 | ||
| ILB03N60 | Infineon Technologies | 3A / 600V IGBT with monolithically integrated diode for resonant-halfbridge topologies in lighting ballast (40W-120W) | Original | 334.8KB | 15 | ||
| ILB03N60E3045A | Infineon Technologies | IGBTs & DuoPacks - 3A / 600V LightMOS in TO263 | Original | 316.23KB | 15 |
ILB03N60 Price and Stock
Infineon Technologies AG ILB03N60Insulated Gate Bipolar Transistor, 4.5A I(C), 600V V(BR)CES, N-Channel, TO-263AB |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
ILB03N60 | 1,000 | 1 |
|
Buy Now | ||||||
ILB03N60 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
Q67040-S4628
Abstract: ic 5304 1a Q67040-S4626 ILA03N60 ILB03N60 ILD03N60 ILP03N60 IC 4043 configuration
|
Original |
ila03n60ilp03n60ilb03n60ild03n60+6 | |
ILA03N60
Abstract: ILB03N60 Q67040-S4627 SDP04S60 Infineon MOSFET 1000V
|
Original |
ilb03n60p-to-263-3-2o-263abq67040-s4627+3 | |
|
Contextual Info: ILP03N60, ILB03N60 ILD03N60 ^ LightMOS Power Transistor C • • • • New revolutionary high voltage technology designed for ZVSswitching in lamp ballasts IGBT with integrated reverse diode Avalanche rated 150°C operating temperature P-TO-220-3-1 TO-220AB |
Original |
ilp03n60ilb03n60ild03n60p-to-220-3-1+5 | |
ILA03N60
Abstract: ILB03N60 ILD03N60 ILP03N60 Q67040-S4626 Q67040-S4628
|
Original |
ila03n60ilp03n60ilb03n60ild03n60+4 |