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ILD03N60 Datasheets (2)

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Infineon Technologies

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
ILD03N60		Infineon Technologies	3A / 600V IGBT with monolithically integrated diode for resonant-halfbridge topologies in lighting ballast (40W-120W)	Original	PDF	334.8KB	15
ILD03N60F		Infineon Technologies	TRANS IGBT CHIP N-CH 600V 4.5A 3P-TO252-3-1	Original	PDF	334.8KB	15

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Infineon Technologies AG


Infineon Technologies AG ILD03N60 Insulated Gate Bipolar Transistor, 4.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	ILD03N60		1,343		1	1 - 10 - 100 $0.24 1000 $0.20 10000 $0.18	Buy Now

ILD03N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
L03N60 Abstract: PG-TO220-3-31 TRANSISTOR SMD MARKING CODE 1v mj 4043 Infineon MOSFET 1000V MS 25231 LAMP RG80 PG-TO-220-3-31 PG-TO25 Contextual Info: ILA03N60, ILP03N60 ILD03N60 ^ LightMOS Power Transistor C • • • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET	Original	ila03n60 ilp03n60 ild03n60 pg-to-220-3-31 +13o-220 pg-to-220-3-1 o-220ab pg-to-252-3-1 o-252aa l03n60 pg-to220-3-31 transistor smd marking code 1v mj 4043 infineon mosfet 1000v ms 25231 lamp rg80 pg-to25	PDF
Q67040-S4628 Abstract: ic 5304 1a Q67040-S4626 ILA03N60 ILB03N60 ILD03N60 ILP03N60 IC 4043 configuration Contextual Info: ILA03N60, ILP03N60 ILB03N60, ILD03N60 ^ LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET	Original	ila03n60 ilp03n60 ilb03n60 ild03n60 +6p-to-220-3-1 o-220ab q67040-s4628 ic 5304 1a q67040-s4626 ic 4043 configuration	PDF
Contextual Info: ILP03N60, ILB03N60 ILD03N60 ^ LightMOS Power Transistor C • • • • New revolutionary high voltage technology designed for ZVSswitching in lamp ballasts IGBT with integrated reverse diode Avalanche rated 150°C operating temperature P-TO-220-3-1 TO-220AB	Original	ilp03n60 ilb03n60 ild03n60 p-to-220-3-1 +5o-220ab p-to-263-3-2 o-263ab p-to-252-3-1 o-252aa	PDF
ILA03N60 Abstract: ILB03N60 ILD03N60 ILP03N60 Q67040-S4626 Q67040-S4628 Contextual Info: ILA03N60, ILP03N60 ILB03N60, ILD03N60 ^ LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET	Original	ila03n60 ilp03n60 ilb03n60 ild03n60 +4p-to-220-3-1 o-220ab q67040-s4626 q67040-s4628	PDF
600V igbt dc to dc buck converter Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635 Contextual Info: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]	Original	b192-h6780-g11-x-7600 sp000008186 vdsl6100i-e 600v igbt dc to dc buck converter +9transistor smd code package sot89 bts 2140 1b data sheet transistor smd code package sot23 psb 6970 hl v1.3 pef 24628 e v1.2-g infineon psb 6970 pef 4265 t v2.1 ht 1200-4 slb 9635	PDF