TRANSISTOR P8 Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

MO178

Abstract: 0118 transistor MO-178BA
Contextual Info: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SOT23-8 0.20 (0.008) M CL P8.064 C VIEW C 8 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE e b INCHES SYMBOL 8 6 7 5 CL CL E 1 2 3 E1 MILLIMETERS MAX MIN MAX NOTES A 0.036

transistor 5d

Abstract: BC808W 5H MARKING BC807-16W BC807-25W BC807-40W BC807W BC808-16W BC808-25W BC808-40W
Contextual Info: P jjjN p ^ e n jjÇ o n d u c to i« ^ Ç ^ 7 1 1 □ fi 2 b QObf lMOT 3Tfl H P H IN PNP general purpose transistor FEATURES ^^P|j°duc^P8çfficatlon BC807W; BC808W PIN CONFIGURATION • High current • S-m ini package. DESCRIPTION PNP transistor in a plastic SOT323

transistor marking P8

Abstract: transistor p8 LDTA123YLT1G LDTA123YLT3G
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA123YLT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an

transistor marking P8

Abstract: LDTA123YWT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA123YWT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an

LDTA123YET1G

Abstract: transistor marking P8 SC-89
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA123YET1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

transistor 81 110 w 63

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor ‘ European Part Number 1C = 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz. • • • •

XC6SLX16-CSG324

Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695
Contextual Info: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller

T12N50

Abstract: 69 PIC transistor
Contextual Info: ZETEX ZXT12N50DX SuperS0T4 DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY Vceo=50V; Rsat = 45m il; lc= 3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex m atrix structure com bined w ith advanced assembly techniques to give

HPA1816

Abstract: HPA1816GR-9JG JUPA1816 PA1816 2002CP
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR juPA1816 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The |o.PA1816 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and

d128

Abstract: PA1852 uPA1852 diode oa 90
Contextual Info: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 5 2 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1852 is a switching device which can be driven directly by a 2.5-V power source.

MRF966

Abstract: MRF9661 HP8970A HP11590B mrf9661 motorola TRANSISTOR 318a Eaton 2075 TRANSISTOR MPS A72 2f 1001 MRFG9661R
Contextual Info: Order this document by MRFG9661/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFG9661 MRFG9661R Advance Information The RF Line N-Channel Dual-Gate GaAs Field-Effect Transistor SURFACE-MOUNTED N-CHANNEL DUAL-GATE GaAs FIELD-EFFECT TRANSISTOR . . . depletion m ode dual-gate M E S FET designed for high frequency amplifier

Contextual Info: um ZXT12P12DX u p e rS O T 4 UAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR UMMARY ceo=-12V; Rsat = 47 m il; lc= -3A ESCRIPTION his new 4th generation ultra low saturation transistor utilises the Zetex atrix structure com bined with advanced assem bly techniques to give

BFG92AW

Abstract: transistor marking P8
Contextual Info: Product specification Philips Semiconductors BFG92AW BFG92AW/X; BFG92AW/XR NPN 6 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG92AW P8 • Gold metallization ensures excellent reliability. BFG92AW/X P9 BFG92AW/XR

D86DL2

Abstract: IRF130 CPD75
Contextual Info: IRF130,131 P86DL2,K2 [jSSMlMiCS FEF RELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. 14.0 AMPERES

Xr 1075

Abstract: BFR90A BFG92A MICROWAVE TRANSISTOR MBC964 2029 transistors up/xr+2320
Contextual Info: Philips Semiconductors FEATURES Product specification PINNING • High power gain PIN • Low noise figure DESCRIPTION BFG92A Fig.1 Code: P8 • Gold metallization ensures excellent reliability. DESCRIPTION The BFG92 is a silicon NPN transistor in a 4-pin, dual-emitter plastic

Contextual Info: MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 3 P8 1 Absolute Maximum Ratings Ta = 25°C TESQ Symbol Rating Unit Collector-Base voltage VCBO 6 V Collector-Emitter voltage

transistor p89

Abstract: transistor be p89 PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT FCX589 FMMT549 DSA003667
Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ✪ ISSUE 3 - OCTOBER 1995 PARTMARKING DETAIL – FCX589 P89 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO -50 Collector-Emitter Voltage V CEO -30

Contextual Info: MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P8 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics

transistor p89

Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ✪ ISSUE 3 - OCTOBER 1995 PARTMARKING DETAIL – FCX589 P89 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO -50 Collector-Emitter Voltage V CEO -30