MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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mn1280kgt50n60kdabc547 smd transistorkia1117af+6transistor smd zgy6 smd transistormb4213y4 smd transistorsmd transistor zaakgt25n120nda
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KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2n2904ebc859kds135s2n2906e+16bc860kac3301qnkds1602n3904bcv71kdb2151ekia78*pitransistorkia78*ptransistor 2n3904khb*9d5n20pkhb9d0n90nkid65004aftransistor mosfetkia7812apikhb*2d0n60p
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khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2n2904ebc859kds135s2n2906e+16bc860kac3301qnkds1602n3904bcv71kdb2151ekhb*9d5n20pkhb9d0n90n6v zener diodekhb*2d0n60ptransistorkhb7d0n65fbc557 transistorkia*278r33pikhb9d0n90n circuitktd998 transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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kia7900pitc7sh04fukic7sh04fusc604+16kac3301qnm51943kia7042ap/aftc7sh08fukic7sh08fult1937oz960khb*9d5n20pmb4213kia78*pimn1280f10p048kia7812amje13007mb4213 equivalenttransistor smd n2 3j
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Contextual Info: DISCRETE SEMICONDUCTORS MPSA64 PNP Darlington transistor 1999 Apr 27 Product specification Supersedes data of 1997 Apr 23 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP Darlington transistor MPSA64 FEATURES PINNING
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ST 9336
Abstract: all transistor book Philips TO-92 MARKING CODE W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA64 PNP Darlington transistor Product specification Supersedes data of 1997 Apr 23 1999 Apr 27 Philips Semiconductors Product specification PNP Darlington transistor MPSA64 FEATURES PINNING • Low current max. 500 mA
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m3d186mpsa64mpsa14mam253+401-may-99st 9336all transistor bookphilips to-92 marking code w
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA64 PNP Darlington transistor Product specification Supersedes data of 1997 Apr 23 1999 Apr 27 Philips Semiconductors Product specification PNP Darlington transistor MPSA64 FEATURES PINNING • Low current max. 500 mA
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m3d186mpsa64mpsa14mam253+2sca63115002/00/04/pp8
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MPSA14
Abstract: MPSA64 SC-43A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA64 PNP Darlington transistor Product specification Supersedes data of 1999 Apr 27 2004 Oct 11 Philips Semiconductors Product specification PNP Darlington transistor MPSA64 FEATURES PINNING • Low current max. 500 mA
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TRANSISTORS BJT bc548
Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Contextual Info: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002
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ot-623fot-323ot-23ot-89+14ot-223o-92so-226aeo-92ltransistors bjt bc548jfet selection guidej210 d2 pakpn4302tn2102abjt bc546fjn965mpf102 jfet data sheetksp13ks3302
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2929 transistor
Abstract: t2929 MPSA62 MPSA75 T-31-21 vbe 10v T-29-29 625MW
Contextual Info: S A MS UN G SEMICONDUCTOR INC 14E D I 7^4142 0007370 2 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA64 T-29-29 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vcta=30V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic
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mpsa64625mwmpsa62t-29-29+9100/iampsh17t-10-fct-31-21-100mhz-2929 transistort2929mpsa75vbe 10v
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Contextual Info: S A M S UN G SEMICONDUCTOR INC 14E D I 7^4142 0007370 2 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA64 T -2 9 -2 9 DARLINGTON TRANSISTOR • C ollector-Em itter Voltage: Vc*s =30V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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Contextual Info: DISCRETE SEMICONDUCTORS MPSA14 NPN Darlington transistor 1999 Apr 27 Product specification Supersedes data of 1997 Apr 24 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING
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mpsa14mpsa64115002/00/04/pp8 |
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MPSA14
Abstract: MPSA64 SC-43A darlington transistor MPSA14
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA14 NPN Darlington transistor Product specification Supersedes data of 2004 Aug 20 2005 May 04 Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING • High current max. 500 mA
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m3d186mpsa14mpsa64mam252+4sca76r75/07/pp6sc-43adarlington transistor mpsa14
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npn darlington
Abstract: MPS-A14
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA14 NPN Darlington transistor Product specification Supersedes data of 1997 Apr 24 1999 Apr 27 Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING • High current max. 500 mA
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m3d186mpsa14mpsa64mam252+4sca63115002/00/04/pp8npn darlingtonmps-a14
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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MPSA63
Abstract: MPSA64
Contextual Info: MPSA63 / 64 PNP Silicon Epitaxial Planar Transistor Darlington Transistor for high gain amplification 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage
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transistor A62
Abstract: MPSA63 MPSA62 MPS-A63 MPSA64 Transistor MPSA63
Contextual Info: SEMICONDUCTOR TECHNICAL DATA MPSA62/63/64 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. FEATURES • Complementary to MPSA13/14. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT -20 C o lle c to r-B a se MPSA62
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mpsa62/63/64mpsa13/14mpsa62mpsa63/64+6a62/63/64transistor a62mpsa63mps-a63mpsa64transistor mpsa63
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"Darlington Transistor"
Abstract: transistor mpsa64 CMPTA63 CMPTA64 CP707 CXTA64 CZTA64 MPSA63 MPSA64
Contextual Info: PROCESS CP707 Small Signal Transistor PNP - Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area 5.3 x 6.5 MILS Top Side Metalization
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cp707cmpta63cmpta64cxta64+6czta64mpsa63mpsa64435-hipdarlington transistortransistor mpsa64
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Contextual Info: PROCESS CP707 Small Signal Transistor PNP - Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area 5.3 x 6.5 MILS Top Side Metalization
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cp707cmpta63cmpta64cxta64+5czta64mpsa63mpsa6423-august23-ansistor
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"Darlington Transistor"
Abstract: CMPTA63 CMPTA64 CP707 CXTA64 CZTA64 MPSA63 MPSA64
Contextual Info: PROCESS CP707 Small Signal Transistor PNP - Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area 5.3 x 6.5 MILS Top Side Metalization
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cp707cmpta63cmpta64cxta64+5czta64mpsa63mpsa6422-marchdarlington transistor
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CMPTA64
Abstract: CMPTA63 CP707 CXTA64 CZTA64 MPSA63 MPSA64
Contextual Info: PROCESS CP707 Central Small Signal Transistor TM Semiconductor Corp. PNP - Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area 5.3 x 6.5 MILS
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cp707cmpta63cmpta64cxta64+4czta64mpsa63mpsa64117taxial
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MPSA63
Abstract: MPSA62 MPSA64
Contextual Info: SEMICONDUCTOR MPSA62/63/64 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. B C FEATURES A Complementary to MPSA13/14. DIM A B C D E F G H J K L M N N E K MPSA62 Voltage MPSA63/64 Collector-Emitter MPSA62
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mpsa63
Abstract: MPSA63.64 MPS-A62 HMPSA63 MPSA62
Contextual Info: SEMICONDUCTOR MPSA62/63/64 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. B C FEATURES A ・Complementary to MPSA13/14. DIM A B C D E F G H J K L M N N E K MAXIMUM RATING Ta=25℃ SYMBOL RATING Collector-Base
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MPSA63
Abstract: MPSA13 MPSA62 MPSA64
Contextual Info: SEMICONDUCTOR MPSA62/63/64 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. B C FEATURES A ᴌComplementary to MPSA13/14. DIM A B C D E F G H J K L M N N E K MAXIMUM RATING Ta=25ᴱ Voltage MPSA63/64 Collector-Emitter
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