TRANSISTOR MJ4502 Search Results

Contextual Info: ON Semiconductort MJ4502 High−Power PNP Silicon Transistor 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. • High DC Current Gain —

MJ4502

Abstract: MJ802 MJ802 MJ4502
Contextual Info: ON Semiconductort MJ4502 High-Power PNP Silicon Transistor 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — •

transistor mj4502

Abstract: MJ4502 MJ4502 MOTOROLA MOTOROLA TRANSISTOR MJ802
Contextual Info: MOTOROLA Order this document by MJ4502/D SEMICONDUCTOR TECHNICAL DATA MJ4502 High-Power PNP Silicon Transistor 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel.

mj4502

Abstract: MJ4502G MJ802
Contextual Info: MJ4502 High−Power NPN Silicon Transistor This transistor is for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. http://onsemi.com Features • • • • High DC Current Gain − hFE = 25 −100 @ IC = 7.5 A

2sc 1177

Abstract: MJ802 MJ4502 Tra 1120 r MJ4502 MJ802
Contextual Info: MJ4502 SILICON 30 AMPERE POWER TRANSISTOR HIGH-POWER PNP SILICON TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. High DC Current Gain - hFE = 25-100 @ lc ” 7.5 A

mj4502

Contextual Info: MOTOROLA Order this document by MJ4502/D SEMICONDUCTOR TECHNICAL DATA M J4502 H igh-Pow er PNP Silicon Transistor . . . for use as an output device in complementary audio amplifiers to 100-W atts music power per channel. • • • 30 AMPERE POWER TRANSISTOR

MJ4502G

Abstract: MJ4502 transistor mj4502 MJ802 MJ802 MJ4502 100watts
Contextual Info: MJ4502 High−Power NPN Silicon Transistor This transistor is for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • • • • High DC Current Gain − hFE = 25 −100 @ IC = 7.5 A Excellent Safe Operating Area

MJ4502 EQUIVALENT

Abstract: BU108 BU806 Complement BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ4502 High-Power PNP Silicon Transistor 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — hFE = 25 – 100 @ IC = 7.5 A

automotive ignition tip162

Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —

MJE15020

Abstract: DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment

BUS48AP

Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

BU108

Abstract: 2SC1629 equivalent BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:

BU108

Abstract: BC337 circuit example BC337 rbe BDX54 replacement transistor BC337 BU326 BU100 MOTOROLA 2N3773
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU522B High Voltage Silicon Power Darlingtons 7 AMPERES DARLINGTON POWER TRANSISTORS NPN SILICON 450 VOLTS 75 WATTS Power Transistor mainly intended for use as ignition circuit output transistor. • Specified minimum sustaining voltage:

BU208A equivalent

Abstract: BD237 similar IC 3843 8 Pin BU108 BU208 2N4347 BD-31 2n3055 motorola bdx54c equivalent MJ13330
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ13333  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERE NPN SILICON POWER TRANSISTORS 400–500 VOLTS 175 WATTS The MJ13333 transistor is designed for high voltage, high–speed, power switching

2SD418

Abstract: TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,

BU108

Abstract: 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon PNP Transistor 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

BU108

Abstract: BDT3 2SC1943 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE8503A* Advance Information SWITCHMODE Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS — BVCES 80 WATTS The MJE8503A transistor is designed for high voltage, high speed, power switching

2N3055 equivalent transistor NUMBER

Abstract: bd139 equivalent transistor MJE350 equivalent 2n6284 equivalent TIP152 equivalent MJE371 equivalent bd139 equivalent bd139 3v BUL45 equivalent BU108
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE1320  Data Sheet Designer's NPN Silicon Power Transistor Switchmode Series This transistor is designed for high–voltage, power switching in inductive circuits where RBSOA and breakdown voltage are critical. They are particularly suited for

bu806 REPLACEMENT

Abstract: k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s.

2SA1046

Abstract: transistor bc 851 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2N6107 equivalent BU326 BU108 BU100 BUL1 2N3055 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH51 Advance Information SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS The BUH51 has an application specific state–of–art die designed for use in 50 Watts Halogen electronic transformers.

Contextual Info: ON Semiconductort MJ802 High−Power NPN Silicon Transistor 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. • High DC Current Gain —

J802

Abstract: MJ802 EQUIVALENT MJ4502 EQUIVALENT MJ4502 MJ802 transistor mj4502
Contextual Info: ON Semiconductort MJ802 High-Power NPN Silicon Transistor 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — •

automotive ignition tip162

Abstract: BU323A equivalent 2SA1046 BC337 rbe BU108 TIP102 Darlington transistor bc337 cross-reference 2SC190 replacement transistor BC337 BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323A NPN Silicon Power Darlington Transistor The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. COLLECTOR • VCE Sat Specified at – 40_C = 2.0 V Max. at IC = 6 A.

transistor cross reference

Abstract: BD139 fall time motorola MJ15003 BU108 2SA1046 bd139 140 TIP42A equivalent motorola 2n3772 transistor mj3001 TL MJE2955T
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH100  Data Sheet Designer's SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 10 AMPERES 700 VOLTS 100 WATTS The BUH100 has an application specific state–of–art die designed for use in 100 Watts Halogen electronic transformers.