water level inductive sensor
Abstract: obstacle sensors
Contextual Info: 869 FIBER SENSORS Digital Mark Sensor Amplifier Built-in LX-100 SERIES Related Information •■General terms and conditions. F-17 ■■Glossary of terms. P.1359~ ■■Sensor selection guide.P.831~ ■■General precautions. P.1405
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lx-100lx-101lx-101-pfz-10+2water level inductive sensorobstacle sensors
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optocoupler bi-directional 4 pin
Abstract: ADB62 OPTOCOUPLER MARKING CODE H11ADB H11ADB6 fairchild optocoupler H11ADB62
Contextual Info: 8-PIN BI-DIRECTIONAL TRANSISTOR OPTOCOUPLER H11ADB6 H11ADB61 H11ADB62 DESCRIPTION The H11ADB series optocouplers have two channels for high density applications. The inverse parallel channel orientation is ideal for applications which require data to be both transmitted and received on each side of the isolation boundary. Each
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h11adb6h11adb61h11adb62h11adb+5e90700optocoupler bi-directional 4 pinadb62optocoupler marking codefairchild optocoupler
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Contextual Info: 833 FIBER SENSORS Wafer Mapping Sensor M-DW1 Related Information •■General terms and conditions. F-17 ■■General precautions. P.1405 ■■Sensor selection guide. P.831~ LASER SENSORS PHOTOELECTRIC SENSORS
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Contextual Info: 853 FIBER SENSORS Leak Detection Sensor Amplifier Built-in EX-F70 SERIES EX-F60 SERIES Related Information •■General terms and conditions. F-17 ■■General precautions. P.1405 ■■Sensor selection guide. P.831~
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ex-f70ex-f60panasonic-electric-wo661ex-f70/ |
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BT816
Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728
Contextual Info: DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: •o OUT I N o -MA/V • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded
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mm/13o-92sbt816ta114e+8a768transistor b722b861b718equivalent transistor tt 3034c785 transistorb714 transistorb728
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y1 marking code transistor
Abstract: HSB1386I transistor mark code H1
Contextual Info: HI-SINCERITY Spec. No. : HI200201 Issued Date : 2002.02.01 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HSB1386I LOW FREQUENCY TRANSISTOR -20V, -4A Features • Low VCE(sat). VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A) • Excellent DC current gain characteristics.
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hi200201hsb1386io-251183oc+4217oc260ocy1 marking code transistortransistor mark code h1
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h11cx
Abstract: GK transistor PHOTO SCR definition IN5060 diode SC146D DATA SHEET Photo SCR H11C3 H11C5 H11C4 scr pins
Contextual Info: PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 PACKAGE H11C5 SCHEMATIC ANODE 1 6 H11C6 6 GATE 6 CATHODE 2 5 ANODE 1 N/C 3 1 4 CATHODE 6 1 DESCRIPTION The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled
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h11c1h11c2h11c3h11c4+11h11c5h11c6e9070000v/400vh11cxgk transistorphoto scr definitionin5060 diodesc146d data sheetphoto scrscr pins
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equivalent transistor TT 3034
Abstract: transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718
Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded (thru-hole) packages
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-335/h-135/d-40-334/h-280/d-41-334/h-28q/d-41l-56sw-42/h-115+13l-565/w-42/h-12ot-23sc-59equivalent transistor tt 3034transistor tt 3034d718 transistord718 equivalenttransistor a769tt 3034 transistortransistor d718d718* transistork d718d718
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HLB121I
Abstract: marking code k1 MARK Y1 Transistor transistor mark code H1
Contextual Info: HI-SINCERITY Spec. No. : HE9027 Issued Date : 1996.11.06 Revised Date : 2004.09.24 Page No. : 1/4 MICROELECTRONICS CORP. HLB121I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121I is a medium power transistor designed for use in switching
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he9027hlb121io-251183oc+5217oc260ocmarking code k1mark y1 transistortransistor mark code h1
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transistor mark code H1
Abstract: y1 marking code transistor HLB121I hlb121 HE9027
Contextual Info: HI-SINCERITY Spec. No. : HE9027 Issued Date : 1996.11.06 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HLB121I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121I is a medium power transistor designed for use in switching
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he9027hlb121io-251183oc+5217oc260octransistor mark code h1y1 marking code transistorhlb121
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transistor b722
Abstract: b863 tc 144e Transistor b861 B861 equivalent transistor TT 3034 A771 TRANSISTOR B861 transistor DTC103 transistor TT 3034
Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded
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transistor b722b863tc 144etransistor b861+6b861equivalent transistor tt 3034a771 transistorb861 transistordtc103transistor tt 3034
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equivalent transistor TT 3034
Abstract: transistor TT 3034 A771 TRANSISTOR transistor b722 124e transistor Transistor b865 tc 144e DTC1132 B718 TRANSISTOR 124E
Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded
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equivalent transistor tt 3034transistor tt 3034a771 transistortransistor b722+6124e transistortransistor b865tc 144edtc1132b718transistor 124e
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PT 1017
Abstract: transistor mark code H1 TL 434 transistor k 2837 HLB122I y1 marking code transistor Y2 MARKING MARK Y1 Transistor
Contextual Info: HI-SINCERITY Spec. No. : HE9030 Issued Date : 1998.07.01 Revised Date : 2005.07.13 Page No. : 1/5 MICROELECTRONICS CORP. HLB122I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122I is a medium power transistor designed for use in switching
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he9030hlb122io-251183oc+9217oc260ocpt 1017transistor mark code h1tl 434transistor k 2837y1 marking code transistory2 markingmark y1 transistor
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MARKING W3 SOT23 TRANSISTOR
Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*
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mpsh81mmbth81ot-23marking w3 sot23 transistor+8rf transistor mark code h1transistor marking code ne sot-23marking code w2 sot23pnp rf transistorsot23 transistor marking p2sot-23 marking 3dmarking 3d sot-23marking code mps
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sot-235 g2
Abstract: mosfet mark code G4 marking h2 sot-23-5 marking H2 5pin marking H2 5-pin 5pin mosfet mark G4 sot-23-5 marking G2
Contextual Info: TC1188 TC1189 MAX8863/64 Pin-Compatible, Low-Dropout, 120mA Linear Regulators FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ Delivering up to 120mA, the TC1188 and TC1189 are fixed output, low-dropout linear regulators that operate from a +2.5V to +6.0V input range. The 50µA supply current
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tc1188tc1189max8863/64120ma+10max8863/8864out122tc1188/1189-2sot-235 g2mosfet mark code g4marking h2 sot-23-5marking h2 5pinmarking h2 5-pin5pin mosfet mark g4sot-23-5 marking g2
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sot-235 g2
Abstract: marking h2 sot-23-5 MARKING G3 Transistor sot-23-5 marking G2
Contextual Info: TC1188 TC1189 MAX8863/64 PIN-COMPATIBLE LOW-DROPOUT, 100 mA LINEAR REGULATORS FEATURES GENERAL DESCRIPTION • ■ ■ ■ Delivering up to 100 mA, the TC1188 and TC1189 are fixed output, low-dropout linear regulators that operate from a +2.5V to +6.5V input range. The 50 µA supply current
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tc1188tc1189max8863/64max8863/8864+8tc1188/1189ot-23a-5sc-74atc1188/1189-1sot-235 g2marking h2 sot-23-5marking g3 transistorsot-23-5 marking g2
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Contextual Info: 425 FIBER SENSORS Slim Body Automatic Sensitivity Setting Photoelectric Sensor SU-7 SERIES SH SERIES Related Information •■General terms and conditions. F-17 ■■Glossary of terms. P.1359~ Amplifier-separated ■■Sensor selection guide. P.283~
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2N60 transistor
Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648
Contextual Info: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 1/6 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor
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mos200403h02n60o-252200oc+15183oc217oc260oc245och02n60i2n60 transistorall transistor 2n60transistor 2n6002n602n60mosfet mark y2y1 marking code transistor2n60 application2n60 mosfetmarking code diode 648
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MOSFET MARK y2
Abstract: y1 marking code transistor marking code diode 648 PB40 bridge mosfet k 61 y1 mosfet sn60 transistor mark code H1 diode marking code a2 y2 2N60S marking code 749
Contextual Info: HI-SINCERITY Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 MICROELECTRONICS CORP. H02N60S Series H02N60S Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab
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mos200504h02n60so-252200oc+15183oc217oc260oc245och02n60simosfet mark y2y1 marking code transistormarking code diode 648pb40 bridgemosfet k 61 y1mosfet sn60transistor mark code h1diode marking code a2 y22n60smarking code 749
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02n60
Abstract: all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60 H02N60E
Contextual Info: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/7 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor
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mos200403h02n60o-252200oc+14183oc217oc260oc245och02n60i02n60all transistor 2n602n602n60 transistorpb40 bridge2n60 applicationmosfet mark h1tl 434h02n60e
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marking code k1
Abstract: marking A1 TRANSISTOR HI127
Contextual Info: HI-SINCERITY Spec. No. : HE9017 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/3 MICROELECTRONICS CORP. HI127 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-251 • High DC current gain • Bult-in a damper diode at E-C Darlington Schematic
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he9017hi127o-251183oc+4217oc260ocmarking code k1marking a1 transistor
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marking code k1
Abstract: marking A1 TRANSISTOR marking y1 HI122
Contextual Info: HI-SINCERITY Spec. No. : HI200102 Issued Date : 1998.07.01 Revised Date : 2005.07.13 Page No. : 1/3 MICROELECTRONICS CORP. HI122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-251 The HI122 is designed of general purpose and low speed switching applications.
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hi200102hi122o-251183oc+5217oc260ocmarking code k1marking a1 transistormarking y1
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MOSFET MARK y2
Abstract: MOSFET MARK H1 marking code k1 H01N60S marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI
Contextual Info: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to
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mos200501h01n60s200oc183oc+13217oc260oc245oc10secmosfet mark y2mosfet mark h1marking code k1marking a1 transistormarking y1mosfet k 61 y1mosfet y1pb40h01n60si
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MOSFET MARK y2
Abstract: H01N60S H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1
Contextual Info: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to
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mos200501h01n60s200oc183oc+8217oc260oc245och01n60sih01n60sjmosfet mark y2mosfet mark h1mosfet y1
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