TRANSISTOR K 826 Search Results

2SK1826

Contextual Info: TO SHIBA 2SK1826 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 826 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4V Gate Drive Low Threshold Voltage : Vth = 0.8~2.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT

1.4464

Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S

TEA2262

Abstract: SMPS Transformer Symbol circuit diagram of high power smps SMPS Transformer 12V mos power 823 TEA5170 smps circuit diagrams MASTER-SLAVE SMPS FOR TV hf amplifier for transformer
Contextual Info: ^7M Æ 7 S G S -T H O M S O N ß IL IO T M K i TEA 2262 SWITCH MODE POWER SUPPLY CONTROLLER POSITIVE AND NEGATIVE OUTPUT CUR­ RENT UP TO 1A LOW START-UP CURRENT DIRECT DRIVE OF THE MOS POWER TRANSISTOR TWO LEVELS TRANSISTOR CURRENT LIMI­ TATION DOUBLE PULSE SUPPRESSION

od300

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER T he 2S C 5 2 8 9 is ideal fo r the final stag e am p lifie r in 1.9G H z-band digital cord le ss phones D EC T, PHS, etc. . PA C K A G E D R AW IN G (Unit: mm)

Contextual Info: T O S H IB A 2SK1826 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 826 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS + 0.5 2.5-0.3 + 0.25 I 1.5-0.15 • • • • • 4V Gate Drive Low Threshold Voltage : High Speed

BUK95

Abstract: BUK9504-40A BUK9604-40A 03nd97 M3004
Contextual Info: D2 PA K BUK9604-40A N-channel TrenchMOS logic level FET Rev. 2 — 7 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

3SK151

Contextual Info: TOSHIBA 3SK151 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL D U A L GATE MOS TYPE 3 S K 1 51 Unit in mm TV TUNER VHF MIXER APPLICATIONS. VHF RF AMPLIFIER APPLICATIONS. + 0.2 2.9 - Û 3 • High Conversion Fain : GGS = 24.5dB Typ. • Low Noise Figure

Contextual Info: D2 PA K BUK9604-40A N-channel TrenchMOS logic level FET Rev. 2 — 7 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

2sk1589

Abstract: transistor IR 324 C
Contextual Info: SEC DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1589 ELECTRON DEVICE N-CHANNEL MOS FET FOR SW ITCHING The 2SKT589, N-channe! vertical type MOS F E T , is a switching P A C K A G E D IM EN SIO N S Unit : mm 2.8 ± 0.2 _ device which can be driven directly by the output of ICs having a 5 V

TRANSISTOR CATALOGUE

Contextual Info: Product catalogue | Functional Electronics | Monitoring modules | Limit value monitoring | Transistor output General ordering data Order No. Part designation Version EAN Qty. 8260280000 MCZ SC 0-10V Limit value monitoring, 0.10 V , 1 , 2 , Tension clamp connection

Contextual Info: Web Site: www.parallax.com Forums: forums.parallax.com Sales: sales@parallax.com Technical: support@parallax.com Office: 916 624-8333 Fax: (916) 624-8003 Sales: (888) 512-1024 Tech Support: (888) 997-8267 Dual Relay Board Kit (#27114) The Dual Relay Board can be used to turn lights, fans and other devices on/off while keeping them

WORKING PRINCIPLE IR SENSOR

Abstract: "BJT Transistors" IR phototransistor TRANSISTOR SUBSTITUTION BJT Transistors qrb1114 phototransistor as sensor parallax infrared sensor WORKING PRINCIPLE OF proximity sensor working principle of encoder
Contextual Info: Web Site: www.parallax.com Forums: forums.parallax.com Sales: sales@parallax.com Technical: support@parallax.com Office: 916 624-8333 Fax: (916) 624-8003 Sales: (888) 512-1024 Tech Support: (888) 997-8267 Errata for Process Control v1.0 (#122-28176) Chapter 4 Opto-Reflective Switch Use

Contextual Info: SONY CXP8 2 6 1 2 / 8 2 6 1 6 CMOS 8-bit Single Chip Microcomputer Description The CXP82612/82616 microcomputer is composed of a CPU, ROM, RAM, and I/O ports. These chips feature many other high-performance circuits in a single-chip CMOS design, including an A/D

Contextual Info: SONY CXP82612/82616 CMOS 8-bit Single Chip Microcomputer Description The CXP82612/82616 microcomputer is composed of a CPU, ROM, RAM, and I/O ports. These chips feature many other high-performance circuits in a single-chip CMOS design, including an A/D converter,

4ch car amp ic

Abstract: KIA8260AH 5v 3W AUDIO AMPLIFIER CIRCUIT DIAGRAM GV26d
Contextual Info: KEC KIA8260AH SEMICONDUCTOR KOREA ELECTRONICS CO.,LTD. TECHN ICAL DATA BIPOLAR LINEAR INTEGRATED CIRCUIT M A X P O W E R 40W Q U A D B T L A U D IO P O W E R A M P L IF IE R T h e K IA 8260A H is 4ch B T L audio p o w er am plifier for c a r audio application.

LN3063

Abstract: ln306 SO3A M-826 DSP56302 MC826 MC926 T53B
Contextual Info: M R T L MC900/800 series J-K F LIP - F L O P S M C 926 • M C 826 Available In T O -IO O M e tal Can, A d d " O " Suffix A vailable In TO -91 H at Package, A d d T S u ffix J K flip-flop with direct clear and direct set input* in addition to the clocked inputs.

TDM 5510

Abstract: zener diode v6 77 hall elements dc fan AN82 AN8267S motor dc fan 12v 3 PHASE MOTOR line wiring diagram
Contextual Info: Panasonic ICs for Motor AN8267S Fan Motor Driver • Overview U n it ! m m T he A N 8267S is an 1C to drive the brushless DC fan motors for internally cooling or blowing the air to the office automation equipments and measuring equipmen­ ts . ■ Features

TRANSISTOR S16

Contextual Info: ,UJNY C X P 8 2 6 1 2/8 2 6 1 6 CMOS 8-bit Single Chip Microcomputer Description The CXP82612/82616 microcomputer is composed of a CPU, ROM, RAM, and I/O ports. These chips feature many other high-performance circuits in a single-chip CMOS design, including an A/D converter,

smd transistor xg

Abstract: smd transistor JE transistor bipolar 500ma transistor smd IY
Contextual Info: CS8128 5V Linear Controller/Driver Description The CS8128 contains all the necessary control circuitry to implement a 5V lin­ ear regulator. An external pass device is used to produce superior performance compared to conventional monolithic regulators. The CS8128 with a TIP42

BFG55A

Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Contextual Info: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

CA3088E

Contextual Info: CA3088E PH H A R R IS U U S E M I C O N D U C T O R AM Receiver Subsystem and General-Purpose Amplifier Array November 1996 Features Description • Excellent Overload Characteristics The CA3088E, a monolithic integrated circuit, is an AM sub­ system that provides the converter, IF amplifier, detector,

BLW84

Abstract: DB333 GP 809 RF POWER TRANSISTOR NPN vhf transistor L6
Contextual Info: PHILIPS INTERNATIONAL b 5E D m 7 11 0 02 b 0D b333ñ 7 b l IPHIN BLW84 V.H.F. POW ER TRANSISTO R N-P-N silicon planar epitaxial transistor intended for use in class-A, B and Coperated v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to with­

transistor k 826

Abstract: TRANSISTOR marking code 432
Contextual Info: Central CJD41CNPN CJD42C PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DPÀK1! DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD41C, CJD42C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package

BLW84

Abstract: transistor tt 2222 C 829 transistor TT 2222 npn TT 2222 SOT123 C 828 Transistor transistor L6
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbS3S31 002^441 Sfl3 IAPX BLW84 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated v.h.f. transmitters w ith a nominal supply voltage o f 28 V . The transistor is resistance stabilized and is guaranteed to w ith­