CJD42C Search Results

CJD42C

Abstract: CJD41C CJ04-2
Contextual Info: C JD 41 C C J042C Central" NPN PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD41C, CJD42C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface

Contextual Info: Central" CJD41C NPN CJD42C PNP Sem iconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD41C, CJD42C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface

Contextual Info: Central“ CJD41C NPN CJD42C PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD41C, CJD42C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface

transistor k 826

Abstract: TRANSISTOR marking code 432
Contextual Info: Central CJD41CNPN CJD42C PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DPÀK1! DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD41C, CJD42C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package

d marking code dpak transistor

Contextual Info: Central" CJD41C NPN CJD42C PNP semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD41C, CJD42C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package

Contextual Info: CJD41C NPN CJD42C PNP w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD41C and CJD42C are complementary silicon power transistors manufactured by the epitaxial base process, mounted

Silicon Power Transistors

Abstract: CJD42C CJD41C
Contextual Info: CJD41C NPN CJD42C PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD41C, CJD42C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted

PNP Silicon Power Transistor DPAK

Abstract: marking JC diode NPN Silicon Power Transistor DPAK CJD42C CJD41C
Contextual Info: CJD41C NPN CJD42C PNP COMPLEMENTARY SILICON POWER TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD41C, CJD42C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package

Contextual Info: central CJD41C NPN CJD42C PNP Sem icon du ctor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD41C, CJD42C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface

Contextual Info: CJD41C NPN CJD42C PNP w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD41C and CJD42C are complementary silicon power transistors manufactured by the epitaxial base process, mounted

Contextual Info: central" CJD41C NPN CJ042C PNP Sem iconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD41C, CJD42C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface

Contextual Info: Central' CJD41C NPN CJD42C PNP Sem iconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: T h fiC F N T R A I S F M in O N D I ir/T O R P. CJD42C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface

CJD42C

Abstract: CP611 TIP42C r5 transistor
Contextual Info: PROCESS CP611 Power Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 80 x 99 MILS Die Thickness 12.5 ± 1 MILS Base Bonding Pad Area 12 x 32 MILS Emitter Bonding Pad Area 13 x 46 MILS Top Side Metalization Al - 30,000Å

2003

Abstract: CJD42C CP611 TIP42C
Contextual Info: PROCESS CP611 Central Power Transistor TM Semiconductor Corp. PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 80 X 99 MILS Die Thickness 12.5 ± 1 MILS Base Bonding Pad Area 12 X 32 MILS Emitter Bonding Pad Area 13 X 46 MILS

TIP42C

Abstract: AG10 CJD42C CP589
Contextual Info: Central PROCESS TM CP589 Power Transistors Semiconductor Corp. PNP - Amp/Switch Transistor Chip PROCESS DETAILS PROCESS EPITAXIAL BASE DIE SIZE 80 x 80 MILS DIE THICKNESS 12 MILS BASE BONDING PAD AREA 12 x 18 MILS EMITTER BONDING PAD AREA 13 x 28 MILS TOP SIDE METALIZATION

CMPZ4124

Abstract: CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B
Contextual Info: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) b v Ce o b v ebo •SVcES 'CBO VCB *'CEV ® VCE (V) (V) (V) (V) (nA) j MIN M.N MIN MAX 1 hFE @ IC ® VCE (mA) MIN 1 General Purpose Amplifiers/Switches

BAT 13003 D

Abstract: SMBJ5.OCA bat 13003 em 434 CMHD3595 CMR1U-02M CMSD4448 CMPS5064 CMPSH-3SE CMSH3-40
Contextual Info: index/Cross Reference Industry Part Number Central Part Number CMXD4448 1MN10 10BQ015 CMSH1-20ML CMR1U-02M 10MF2 10MQ040 CMSH1-40M 10MQ060 CMSH1-60M 1N6478 CMR1-02M 1N6479 CMR1-02M 1N6481 CMR1-04M 1N6482 CMR1-06M 1N6483 CMR1-10M CMR1-10M 1N6484 1S2835 CMPD2836

CJD3055

Abstract: CZT3055 darlington
Contextual Info: Power Transistore POWER 223 SOT-223 Case A Pow er Transistor C hip in a Sm all Signal Package! DESCRIPTION TYPE NO. NPN CZT31C PNP CZT32C CZT122 CZT127 CZT2955 CZT3055 CZT5338 'c P0 bwc b o BVc e o A MAX (W) (V) MIN (V) MIN MIN MAX AMPL7SWITCH 3.0 2.0 100

BC5508

Abstract: 6CW66 BC5588 BC8488 TRANSISTOR bc5508 1GW NPN 8C546 smd transistor marking 1gw 1gw transistor SMD Transistors 1gw
Contextual Info: Selection Guide Page Small Signal Transistors 42 Small Signal MOSFETs 43 Junction FETs 44 Power Transistors 49 Switching Diodes 50 Schottky Diodes 51 Low Leakage Diodes 52 Stabistor Diodes 52 Zener Diodes 53 Transient Voltage Suppressors TVS 57 Current Limiting Diodes

TRANSISTOR NPN BA RV SOT - 89

Abstract: bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124
Contextual Info: Selection Guide Page Small Signal Transistors 44 Small Signal DMOS FETs 55 Junction FETs 56 Digital Transistor 56 Power Transistors 57 Switching Diodes 60 Schottky Diodes 63 Low Leakage Diodes 66 Ultra Low Leakage Diodes 66 Stabistor Diodes 67 Zener Diodes

CSH06

Contextual Info: Central' Semiconductor Corp. MewProductAnnouncement m m \ DPAK Case Power Transistors Ultra Fast Recovery Rectifiers Schottky Rectifiers DPAK Case Pow er Transistors TYPE NO. 'c pD A (W) BVC b o hFE bvceo •c v CE(SAT) 0 IC <T *b v CEv NPN I (V) (V) PNP

1N4007 diode SOD 80

Abstract: 1N4148 SMA 2n2222a SOT23 smd 2n3055 2N2369 SOT-23 2n3904 smd 2n3055 SOT-23 TIP41 SOT23 2N6520 sot23 SMD DIODE 1N4006
Contextual Info: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 BAS28 CLL914 CMPD 914 CMPD2836 CMPD2838 CMPD7000 SOT-143 SOD-80 SOT-23 SOT-23 SOT-23 SOT-23 Dual, Isolated Leadless Switching Diode Single Switching Diode Dual, Common Anode Dual, Common Cathode

44H11

Abstract: A 3150 ic 45h11 3055 sot-223 sod923 2955 sot223 IC A 3150 SOT 363 darlington CXT7090L 7120
Contextual Info: Bipolar Power Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless

transistor CR pnp

Abstract: CJD42C Transistor switch CP611 TIP42C chip die transistor
Contextual Info: PROCESS CP611 Power Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 80 X 99 MILS Die Thickness 12.5 ± 1 MILS Base Bonding Pad Area 12 X 32 MILS Emitter Bonding Pad Area 13 X 46 MILS Top Side Metalization Al - 50,000Å