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Lenze EZAELN3063B471 MAINS CHOKE 3X 63A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	EZAELN3063B471	Bulk		2 Weeks	1	1 $947.44 10 $947.44 100 $947.44 1000 $947.44 10000 $947.44	Get Quote

LN3063 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: DIM250PLM33-TS000 IGBT Chopper Module DS6108-1 June 2013 LN30636 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  Isolated AlSiC Base with AlN Substrates	Original	DIM250PLM33-TS000 DS6108-1 LN30636) 240names	PDF
Contextual Info: DIM1000ECM33-TL000 IGBT Chopper Module DS6105-1 June 2013 LN30633 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT	Original	DIM1000ECM33-TL000 DS6105-1 LN30633)	PDF
Contextual Info: Preliminary Information Data DIM400XCM45-TS001 IGBT Chopper Module DS6110-1 June 2013 LN30638 FEATURES KEY PARAMETERS • 10.2kV Isolation  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 	Original	DIM400XCM45-TS001 DS6110-1 LN30638)	PDF
Contextual Info: DIM1000NSM33-TL000 Single Switch IGBT Module DS6109-1 June 2013 LN30637 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT	Original	DIM1000NSM33-TL000 DS6109-1 LN30637)	PDF
DFM100PXM33-F000 Contextual Info: DFM100PXM33-F000 Fast Recovery Diode Module Replaces DS5907-2 DS5907-3 April 2013 LN30630 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates	Original	DFM100PXM33-F000 DS5907-2 DS5907-3 LN30630) DFM100PXM33-F000	PDF
Contextual Info: DFM100PXM33-F000 Fast Recovery Diode Module Replaces DS5907-2 DS5907-3 April 2013 LN30630 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates	Original	DFM100PXM33-F000 DS5907-2 DS5907-3 LN30630) DFM100PXM33-F000	PDF
Contextual Info: Preliminary Information Data DIM400XCM45-TS000 IGBT Chopper Module DS6111-1 June 2013 LN30639 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC	Original	DIM400XCM45-TS000 DS6111-1 LN30639)	PDF
Contextual Info: Preliminary Information Data DIM1200ASM45-TS001 Single Switch IGBT Module DS6107-1 June 2013 LN30635 FEATURES KEY PARAMETERS • 10.2kV Isolation  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK)	Original	DIM1200ASM45-TS001 DS6107-1 LN30635)	PDF
DIM1000XSM33-TL001 Contextual Info: DIM1000XSM33-TL001 Single Switch IGBT Module DS6104-1 June 2013 LN30632 FEATURES KEY PARAMETERS • 10.2kV Isolation  Low VCE(sat) Device  10µs Short Circuit Withstand VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Thermal Cycling Capability	Original	DIM1000XSM33-TL001 DS6104-1 LN30632) DIM1000XSM33-TL001	PDF
Contextual Info: Preliminary Information Data DIM400XCM45-TS000 IGBT Chopper Module DS6111-1 June 2013 LN30639 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC	Original	DIM400XCM45-TS000 DS6111-1 LN30639)	PDF
Contextual Info: Preliminary Information Data DIM1200ASM45-TS001 Single Switch IGBT Module DS6107-1 June 2013 LN30635 FEATURES KEY PARAMETERS • 10.2kV Isolation  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK)	Original	DIM1200ASM45-TS001 DS6107-1 LN30635)	PDF
DIM1000NSM33-TL000 Abstract: DIM1000NSM33-TL Contextual Info: DIM1000NSM33-TL000 Single Switch IGBT Module DS6109-1 June 2013 LN30637 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT	Original	DIM1000NSM33-TL000 DS6109-1 LN30637) DIM1000NSM33-TL000 DIM1000NSM33-TL	PDF
Contextual Info: DIM1000ECM33-TL000 IGBT Chopper Module DS6105-1 June 2013 LN30633 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT	Original	DIM1000ECM33-TL000 DS6105-1 LN30633)	PDF
Contextual Info: Preliminary Information Data DIM400XCM45-TS001 IGBT Chopper Module DS6110-1 June 2013 LN30638 FEATURES KEY PARAMETERS • 10.2kV Isolation  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 	Original	DIM400XCM45-TS001 DS6110-1 LN30638)	PDF

Contextual Info: DIM1000XSM33-TL001 Single Switch IGBT Module DS6104-1 June 2013 LN30632 FEATURES KEY PARAMETERS • 10.2kV Isolation  Low VCE(sat) Device  10µs Short Circuit Withstand VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Thermal Cycling Capability	Original	DIM1000XSM33-TL001 DS6104-1 LN30632)	PDF
IN2222A Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536 Contextual Info: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll	Original		PDF