TRANSISTOR JCE Search Results

2N3054

Abstract: C4125 4392n 3054 booc power transistors dc-27 transistor 2n3054
Contextual Info: 2 N 3054 NPN Power transistor for AF amplifier and switching applications 2 N 3 0 5 4 is a single-diffused N P N silicon transistor in a T O -6 6 case. The collector is electrically connected to the case. The transistor 2 N 3 0 5 4 is particularly suitable

HF 331 transistor

Contextual Info: _LL 86D 01952* o o m n o DbE D N AMER PHILIPS/DXSCRETE BLY92A T -3 3 -& 7 D 2 A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and

transistor buv 90

Abstract: BCY 85 Q60203-Y66 BCY 66
Contextual Info: N PN -Transistor fü r rauscharm e N F -V o rs tu fe n BCY 66 BCY 66 ist ein epitaktischer NPN-Silizium-Planar-Transistor im Gehäuse 18 A3 DIN 41876 TO-18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor ist für besonders rauscharme NF-Vorstufen vorgesehen. (Komplementärtransistor dazu B C Y 67).

BFY80

Contextual Info: Silïzium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Pianar Transistor Anwendungen: Ansteuerung von Ziffernanzeigeröhren und Relais Applications: D river stages fo r in d ica to r tubes and relays Features: Besondere Merkmale: • Hohe Sperrspannung

BF199

Abstract: TFK U 217 B transistor BF 199 TFK 505 BF 199 transistor bf 199 lamb TFK 001 TFK 505 am TFK U 111 B
Contextual Info: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon N P N Epitaxial Planar RF Transistor Anwendungen: FS-ZF-Verstärkerstufen in Em itterschaltung. Besonders in Video-ZF-Endstufen Applications: Video IF am p lifier stages in com m on em itter configuration,

transistor BR 471 A

Abstract: be27 BF 471 Transistor A 471 CM 90-PS Scans-0010675
Contextual Info: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Video-B-Endstufen in Fernsehem pfängern Applications: Video-B-class pow er stages in TV receivers Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

transistor bf 196

Abstract: BF 194 transistor transistor bf 195 ge-2 transistor BF 194 npn transistor transistor bf 194 transistor bf 193 BF173 bf 173 transistor transistor bf 194 E C B
Contextual Info: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: FS-ZF-Verstärkerstufen in Em itterschaltung. Besonders in Video-ZF-Endstufen Applications: Video IF am p lifier stages in com m on e m itter configuration,

BFY90

Abstract: 73180 Tfk 880 BFy 90 transistor
Contextual Info: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Allgem ein bis in den GHz-Bereich Applications: General up to the GHz range Besondere Merkmale: Features: • Leistungsverstärkung 8 dB 800 MHz • Power gain 8 dB (800 MHz)

transistor bf 422

Abstract: BF 264 PNP transistor 263 BF 422
Contextual Info: Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon PNP Epitaxial Planar RF Transistor Anwendungen: Video-B-Endstufen in Fernsehem pfängern Applications: Video El-class p o w e r stages in TV-receivers Besondere Merkmale: Features: • Kom plem entär zu BF 422

Contextual Info: CMBT4401 SILICON PLAN AR EPITAXIAL TRANSISTOR N-P-N transistor Marking CMBT4401 = 2X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 2.6 1 = BASE 2 = EMITTER 3 « COLLECTOR 2.4 _L02 0.89* 2.00 0.60 0.40 1.80 ABSOLUTE MAXIMUM RATINGS

solitrondevices

Abstract: 2n263 SOLITRON MC 150 transistor
Contextual Info: 012 56 8368602 SDLITRON DEVICES .INC S0LITR0N DEVICES INC ti D T- Sjf_r DE|ñ3t.ñboa oooiasb t |~ NO. 6079/2N263V SILICON TRANSISTOR ENGINEERING DEVICE SPECIFICATION GENERAL DESCRIPTION This device is an NPN Triple Diffused Planar Power Transistor packaged in a double-ended stud-mounted case*

transistor D 1557

Abstract: 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power
Contextual Info: 5SC » • fi235bOS GG04QÔ1 S H S I E â PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “ fo r m ixe r and o sc illa to r c irc u its up to 9 0 0 M H z - 7^ 3/-07 AF 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor Is particularly

transistor d 1556

Abstract: d 1556 transistor transistor af 126 AF279S transistor 1555 UHF pnp transistor AF279 PNP UHF transistor flE35b05 AF 279
Contextual Info: ESC D • flE35bG5 OODMO?^ 7 m S I Z G ' PNP Germanium UHF Transistor A F 279 S SIEMENS A K T I E N G E S E L L S C H A F 25C 04079 D - — fo r in p u t stages up to 9 0 0 M H z fly ' A n ' AF 279 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor is particularly

Contextual Info: MICRO E LE CT RONI CS LTD 41E D b G T I TÛ ê 0 0 0 0 cl ci2 3 MEHK T -3 3 "/^ 2N3055 NPN HIGH POWER SILICON PLANER TRANSISTOR MECHANICAL UUTblWE. GENERAL DESCRIPTION The 2N3055 is an NPN silicon planer power transistor. It is intended for use in class B

42t sot-23

Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
Contextual Info: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen

TFK 421

Abstract: tfk 423 73211 BSW89 TFK 10 tfk 536
Contextual Info: Silizium-NPN-Epitaxial-Planar-Schalttransistor Silicon NPN Epitaxial Planar Switching Transistor Anwendungen: S chalter Applications: Switches Besondere Merkmale: • Hohe Strom verstärkung • In G ruppen so rtie rt Features: • High current gain • In groups selected

tlk 94

Abstract: 2N2193 High Speed Switches C4752 tfk s 220
Contextual Info: 4M> Nicht für Neuentwicklungen Not for new developments 2 N 2193 'W Silizium-NPN-Epitaxial-Pianar-Schalttransistor Silicon NPN Epitaxial Planar Switching Transistor Anwendungen: HF-Verstärker und schnelle Schalter Applications: RF am plifiers and high speed switches

Contextual Info: TOSHIBA TRANSISTOR SEMICONDUCTOR RN2407, RN2408, RN2409 TnCUIDA •w w ■I I TECHNICAL SILICON PNP EPITAXIAL TYPE PCT PROCESS DATA (RN2407) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS With Built-in Bias Resistors Simplify Circuit Design

SH2100

Abstract: fairchild micrologic 5 pin relay 12vdc free fairchild micrologic 923 fairchild micrologic 903 FD600 Fairchild SH rtl micrologic rtl micrologic 923 ScansUX983
Contextual Info: SH2100 HIGH CURRENT DRIVER HYBRID CIRCUITS GENERAL DESCRIPTION - The SH 2100 Hybrid consists of a Buffer Micrologic Integrated Circuit driving a high-current NPN Planar* Epitaxial Silicon Transistor. PHYSICAL DIMENSIONS SIMILAR TO TO-5J ♦Planar is a patented Fairchild process.

PWg300

Abstract: 2SC3466
Contextual Info: Ordering n u m b er:EN 2487A | _ 2SC3466 NPN Triple Diffused Planar Silicon Transistor 650V/8A Switching Regulator Applications Features . High breakdown voltage and high reliability . Fast switching speed . Wide ASO Absolute Mali»« Ratings at Ta=25°C

Contextual Info: tStml-dontLuckot ZPioJuati, Una. TELEPHONE: 973 378-2902 (212) 227-8008 FAX: (973) 3784980 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N5330 30 AMP HIGH SPEED NPN TRANSISTOR 150 VOLTS JEDECTO-61 FEATURES ALL TERMINALS ISOLATED FROM CASE RADIATION TOLERANT

transistor BC 56

Abstract: 2SC4441
Contextual Info: Ordering number: EN 3794 No.3794 _ 2 S C 4 4 4 1 NPN Triple Diffused P lanar Silicon Transistor Very High-Definition Monocuro Display Horizontal Deflection Output Applications Features • High reliability Adoption of HVP process . • High fast.

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

C0805C225K9RACTU

Abstract: ECJ-1VB1H103K PCC1784CT-ND R04003
Contextual Info: HELP3TM Tri-band USCellular/Japan Cellular/IMT UMTS/WCDMA Power Amplifier Module Application Note HELP3TM Tri-band WCDMA Power Amplifier Module Rev 2 Relevant products • AWT6222 General Description This ANADIGICS 3 mm x 5 mm hetero-junction bipolar transistor HBT power amplifier module is designed