FLE35BG5 Search Results

transistor d 1556

Abstract: d 1556 transistor transistor af 126 AF279S transistor 1555 UHF pnp transistor AF279 PNP UHF transistor flE35b05 AF 279
Contextual Info: ESC D • flE35bG5 OODMO?^ 7 m S I Z G ' PNP Germanium UHF Transistor A F 279 S SIEMENS A K T I E N G E S E L L S C H A F 25C 04079 D - — fo r in p u t stages up to 9 0 0 M H z fly ' A n ' AF 279 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor is particularly

SIEMENS BST

Abstract: SIEMENS BST f 35 80 SIEMENS BST t SIEMENS BST h 35 SIEMENS BST N 45 b 110 SIEMENS BST H 45 90 SIEMENS BST h 05 90 SIEMENS BST f 05 90 BST60
Contextual Info: SIEMENS 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ/BST(L)-50/-60/-70 HYB 3118160BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 50 60 70

Contextual Info: SIEMENS Standard EEPROM ICs SLx 24C01/02 1/2 Kbit 128/256 x 8 bit Serial CMOS-EEPROM with I2C Synchronous 2-Wire Bus Data Sheet 1998-07-27 • BEBSbDS Q i n M E b 3bb SLx 24C01/02 Revision History: Current Version: 1998-07-27 Previous Version: 06.97 Page

Contextual Info: SIEMENS Standard EEPROM ICs SLx 24C164 16 Kbit 2048 X 8 bit Serial CMOS-EEPROM with I2C Synchronous 2-Wire Bus Data Sheet 1998-07-27 ÖEBSbDS 011=1524 474 SLx 24C164 Revision History: Current Version: 1998-07-27 Previous Version: 06.97 Page Page (in previous (in current

Contextual Info: SIEMENS Extended Line Card Interface Controller ELIC 1 PEB 20550 PEF 20550 Features Switching EPIC®-1 • Non-blocking switch for 32 digital (e.g. ISDN) or 64 voice subscribers - Bandwidth 16, 32, or 64 kbit/s - Two consecutive 64-bit/s channels can be

Contextual Info: Infineon technologies Surface Mount Capacitive Silicon Absolute Pressure Sensor KP 100 Preliminary Features • • • • • • • Digital output Serial Peripheral Interface SPI Offset calibrated CMOS compatible surface micromachining Diagnostic modes

Contextual Info: SIEMENS BBY 53-03W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code BBY 53-03W

71001 EB

Abstract: siemens ecu Q67120-C771 CMO 765 RC fet marking code P2 SAB-80C517A-N18-T3 SIEMENS 80515 siemens ecu ems bsy 28-90 Changing from the 80C537
Contextual Info: Device Specification SIEM EN S High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517A/83C517A-5 Preliminary SAB 83C517A-5 SAB 80C517A Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • SAB 80C517A/83C517A-5,

asda

Contextual Info: t.DE J> m 653StiDS □D4c13fi3 T % « S I E G SIEMENS SIEMENS AKTIEN6ESELLSCHAF T - 4 £ > - 3 -2 8 Nonvolatile Memory 2-Kbit E2PROM with I 2C-Bus SDA 2526-2 Preliminary Data MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology (E2PROM

B158-H6497-X-X-7600

Abstract: A535B old Resistors Siemens s
Contextual Info: SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517A/83C517A-5 Preliminary SAB 83C517A-5 SAB 80C517A Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • SAB 80C517A/83C517A-5, up to 18 MHz operation

Contextual Info: SIEMENS low pow er m e d iu m p o w e r STL81004/ 81005G/N/Z STM81004/81005G/N/Z Fiber Optics Components User Diodes 1550 nm Laser in Coaxial Package with SM-Pigtail and Optional Connector FEATURES • Designed for fiber optic networks • Laser diode with multi-quantum well structure

Contextual Info: SIEMENS C166-Family of High-Performance CMOS 16-Bit Microcontrollers C163-L Data Sheet C163-L • • • • • • • • • • • • • • 16-Bit Microcontroller High Performance 16-bit CPU with 4-Stage Pipeline - 80 ns Instruction Cycle Time at 25 MHz CPU Clock

Contextual Info: SIEMENS TOPLED LS T670, LO T670, LY T670 LG T670, LP T670 Besondere Merkmale • • • • • • • Gehäusebauform: P-LCC-2 Gehäusefarbe: weiß als optischer Indikator einsetzbar zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung für alle SMT-Bestück- und Löttechniken geeignet

intel 8035

Abstract: 8035 instruction set SAB 8048 p D 8035 intel 8048 8035
Contextual Info: 47E » SIEM EN S • ô535bDS DDETSÜB * « S I E G SIEMENS AKT IENGESELLSCHAF - r - m 8 Bit Single Chip Microcontroller - f t - o SAB 8035/8048 obsolescent Type Extended Temperature Range: - 40 to + 85 C - 40 to + 110 "C SAB 8048-P-T40/85 SAB 8048-P-T40/110

ITL09

Abstract: marking code A7A SMD KL SN 102 lcd siemens b41 fiesta 1993 ATM circuit diagram SDT 15 56 siemens 230 96 siemens relay timer smd 2U 93
Contextual Info: SIEM ENS 1 1.1 1.2 1.3 1.4 1.5 1.6 2 2.1 2.2 PXB 4220 O v e r v ie w . 7 F e a tu re s . 9

Contextual Info: SIEMENS BFG135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor

Contextual Info: SIEMENS BFR 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • fj = 7GHz F = 2.1 dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS 1 M x 1 6 - B it D y n a m ic R A M H Y B 5 1 1 6 1 6 5 B S J - 5 0 /- 6 0 /- 7 0 1 k & 4 k R e fre s h H Y B 5 1 1 8 1 6 5 B S J - 5 0 /- 6 0 /- 7 0 H y p e r P a g e M o d e - E D O Prelim inary Inform ation max. 495 active mW ( HYB3116165BSJ-60)

PS 307 5A

Contextual Info: SIEMENS BUZ 307 SIPMOS Power Transistor • N channel • Enhancement mode V=I05-5$ • Avalanche-rated i Pin 1 Pin 2 G Type BUZ 307 Vds 800 V b 3A Pin 3 D S ^DS on Package Ordering Code 3 Si TO-218AA C67078-S3100-A2 Maximum Ratings Parameter Symbol Continuous drain current

XC+872

Contextual Info: SPD 10N10 Inf i ne on technologies Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS 100 V • Enhancement mode Drain-Source on-state resistance ñ DS on1 0.2 Q. • Avalanche rated Continuous drain current

RXTNB 2

Contextual Info: PXB 4220 SIEM ENS 1 1.1 1.2 1.3 1.4 1.5 1.6 O v e rv ie w .7 Features. 9

Contextual Info: BSS 145 Infineon t«ehno!ogi6* SIPMOS Small-Signal Transistor • N channel s \A • Enhancement mode 2 • ^GS th = 1 4 -2-3 V 1 Pin 1 Pin 2 Vbs BSS 145 65 V Type BSS 145 Ordering Code Q67000-S132 0.22 A Pin 3 S G Type VPS05557 flDS(on) Package Marking

Contextual Info: SIEMENS BCR119S NPN Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit >Two galvanic internal isolated Transistors in one package >Built bias resistor (R1=4.7k£2) WKs Q62702-C2415 1=E1 2=B1 Package CVJ CD II

Contextual Info: SIEMENS 8M X 36-Bit Dynamic RAM Module HYM 368020S/GS-60 Advanced Information • SIMM modules with 8 388 608 words by 36-bit organization for PC main memory applications • Fast access and cycle time 60 ns access time 110 ns cycle time -60 version •