A535B Search Results
A535B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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HFS15
Abstract: RD16H
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a535bos003b0fi32055-c2055-n+8 | |
SAB 82258
Abstract: sab82257
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dd330s116-bitsab82257fl235b05+5 | |
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Contextual Info: 47E D SIEMENS • fi23SbOS 0031bl0 <3 ■ SIEG SIEMENS AKTIENGESEL LSCHAF SAB 82C212 Page/Interleave Memory Controller of Siemens PC-AT Chipset Advance Information 157 3.90 M7E » I fl2 3 5 b 0 5 G 0 3 1 b ll SIEMENS AKTIENGESELLSCHAF □ ■ S IE G SAB 82C212 |
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fi23sbos0031bl082c212m/256+2 | |
E3043
Abstract: E3062A
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23sbds235bostq220/5q67060-xx+4 | |
utc 3845 D
Abstract: SIEMENS BST siemens eh8 t567 P-DSO-20 SIEMENS BST n 55 80
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v66100-m692-x-123shd5utc 3845 dsiemens bst+4 | |
siemens ha 8000
Abstract: BSM 214 A siemens igbt BSM 50 gb 100 d 235L C160 siemens igbt BSM 50 gb 120 d
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c67076-a2105-a2c67076-a2010-a2siemens ha 8000bsm 214 a+4 | |
MARKING CODE SMD JW
Abstract: TXC CXO A51AC isdn modem 2S34 chmn m1p7 SAB-R3000
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t-75-37-07235b0582532n-tspl-cc-68+8 | |
BC 179
Abstract: transistor af 178 BC179 BC178B Q62702-C685 TI-5045 BC179E C154 TRANSISTOR BC 177 transistor
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023sbos--------------------------------bc17962702-cq62702-c141+13 | |
siemens sab 82538
Abstract: 3tb siemens T-0657 SiEMENS PM 350 98 SAB 80188 QD70 SIEMENS ESCC8 1fa MARKING processor hbt 00 04 g Q67100-H6441
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crc-32fl23sb05siemens sab 825383tb siemens+8 | |
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Contextual Info: SPD 13N05L Infineon technologies w » p f°v e d SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancem ent mode Drain-Source on-state resistance ^DSion Continuous drain current b • Avalanche rated 55 V 0.064 |
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13n05lspd13n05lp-t0252q67040-s4124+6 | |
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Contextual Info: SIEMENS Intelligent Sixfold Low-Side Switch TLE 4226 G Bipolar-IC Features • • • • • • • • • • • Quad 50 mA outputs Dual 500 mA outputs Operating range Vs = 5 V ± 5 % Output stages with power limiting Open-collector outputs Shorted load protected within operating range |
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067000-a9118p-dso-24-33sb05ie001153+2 | |
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Contextual Info: SIEMENS ¿ ¿ ¿ ¿ : ^íííííííííííííííííííííííííí^íííííííííííííííííííííííí^íí: ^ ^ ^ ^ ^ ^ ^ ^ ^ íí? íí? ? í? ? ííí:á íííí? íí? í^ ííf í^ : íííííííííííííííííííííííííííííííííííííííí^^ííííífííííííí: |
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g10404c509-la8-a15a535bds+1 | |
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Contextual Info: SIEM ENS HITFET BTS941 Smart Lowside Power Switch Product Summary Features • Logic Level Input Continuous drain source voltage • Input protection ESD On-state resistance • Thermal shutdown Current limitation • Overload protection Load current (ISO) |
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bts941a235b05t0220/5tq220/5_+5 | |
3004x
Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79
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fl23sbos0g04737bfx55q60206-x55+9 | |
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Contextual Info: PMB 2306R/PMB 2306T SIEMENS Table of Contents Page 1 1.1 1.2 1.3 1.4 O v erv ie w .3 F eatures. 3 |
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2306r/pmb2306tp-dso-14-135x45+1 | |
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Contextual Info: SIEMENS Extended Line Card Interface Controller ELIC 1 PEB 20550 PEF 20550 Features Switching EPIC®-1 • Non-blocking switch for 32 digital (e.g. ISDN) or 64 voice subscribers - Bandwidth 16, 32, or 64 kbit/s - Two consecutive 64-bit/s channels can be |
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64-bit/s128-kbit/sia-bidfcl80x1a-bid180x+2 | |
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Contextual Info: SIEM ENS 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ-50/-60/-70 HYB 3118160BSJ-50/-60/-70 Advanced Information I 048 576 words by 16-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) |
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16-bit3116160bsj-50/-60/-703118160bsj-50/-60/-70hyb3118160bsj-50+3 | |
BTS 433
Abstract: fet wn 428 TRANSISTOR K 135 J 50 1S70 1S71 BTS 430 E2
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fl235b05o-218ab/5e3sb05q67060-s6951-a2+6 | |
MSC SDA
Abstract: SDA9092 DS011 DD011
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pl-cc-68q67100-h8353535b05msc sda+3 | |
D1233Contextual Info: SIEMENS 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module HYS 64/72V8200GU HYS 64/72V16220GU 168 pin unbuffered DIMM Modules • 168 Pin PC100-compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications |
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64/72-bit64/72v8200gu64/72v16220gupc100-compatible+5 | |
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Contextual Info: êûD » • 6555b05 0 0 m cm a H M S I E G 88D 14942 D 3 BUZ 221 SIEMENS AKTIENGESELLSCHAF -Main ratings N-Channel Drain-source voltage Continuous drain current Draln-source on-reslstance Description Case Kds = 800 V /„ = 5 ,5 A ^DS on = 2 Î2 |
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6555b05235bqsfl235b05q014t47 | |
B158-H6497-X-X-7600
Abstract: A535B old Resistors Siemens s
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83c517a-580c517a10-bit80c515+9 | |
3004x
Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
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fl23sbos0g04737q60206-x55bfx55+10 | |
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Contextual Info: Metallized Polypropylene Film Capacitors MKP in Plastic Case B 32 620 . B 32 622 MKP stacked-film capacitors Smallest possible dimensions _ / _ b T I Construction • • • • Dielectric: polypropylene Stacked-film technology Plastic case (UL 94 V-0) |
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kmk0089-9fi53sbdsd74abb160vdo/9+5 | |