TRANSISTOR H 331 Search Results

BLY89A

Abstract: transistor h 1061 Transistor bly89a D 1062 transistor transistor ALY 36 transistor 1971 yl 1060 Transistor ALY c2
Contextual Info: P H I L I P S IN T E R N A T IO N A L MAINTENANCE TYPE M IE D H 7 1 1 0 0 2 b 0 0 2 7 ^ 5 1 ^•P H IN BLY89A T~33~/3 V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters with a supply voltage of 13,5 V . The transistor is resistance stabilized. Every

BC369

Abstract: TRANSISTOR bH Silicon Epitaxial Planar Transistor philips
Contextual Info: I 1 N AUER P H I L I P S / D I S C R E T E L I E J> ^53*331 D027S43 152 H A P X BC369 I SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic TO -92 envelope, intended for low-voltage, high-current LF applications. BC 368/B C 369 is the matched complementary pair suitable for class-B output stages up to 3 W.

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

TRANSISTOR GB 558

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •

Contextual Info: P h ilip s S e m icon du ctors • bbSB'lBl DDSM'IST ^b7 H A P X N ANER PHILIPS/DISCRETE b?E D' NPN general purpose transistor FE A T U R E S Product specification BC846W; BC847W; BC848W PIN CONFIGURATION • S- mini package. S i _ EL DESCRIPTION NPN transistor in a plastic SOT323

Depletion MOSFET

Abstract: switching transistor 331 b771D n channel depletion MOSFET N-Channel Depletion-Mode MOSFET BSD12 free transistor gbs transistor convertor 5 V to -5 V Depletion
Contextual Info: 711Gä2t> Q0b770ö 217 • P H I N BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon M OS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.

100-P

Abstract: BUK454-800A BUK454-800B T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711DflSt. 00b4D71 13fl M P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: 7 Philips Semiconductors = -3 3 - & Preliminary specification NPN silicon planar epitaxial microwave power transistor MX1011B400W SbE D PHILIPS INTERNATIONAL 711002b ODMbBbS ‘iSb H P H I N FEATURES DESCRIPTION APPLICATIONS • Suitable for short and medium

Contextual Info: GaAs IRED & PHOTO-TRANSISTOR TLP631,632 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE SOLID STATE RELAY The T O S H I B A TLP631 and T L P632 consist of a p h o t o-transistor o p t i c a l l y coupled to a g a l l i u m arse n i d e infrared emitting d i o d e in

Contextual Info: ROHM CO LTD 7fl20ciclcl 0 0 0 b 0 3 4 1 H R H H 4GE D N 7 > y 7s $ / J ransistors 2SD2023 2SD2023 - 7=33-11 =.W &k% Tf\s—ï f à NPN '> U = l> h 7 > V ^ ^ 1g ;ilil£ti:ftiiliM /L o w Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor

transistor vergleichsliste

Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N

100-C

Abstract: BUK482-60A
Contextual Info: N AUER P H I L IP S /D IS C RE TE h'lE J> m bbSB^l DD30727 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

bfq34 application note

Abstract: ON4497 BFQ34 sf 122 transistor
Contextual Info: Philips Semiconductors h ^ 5 3 1 3 1 DD3 1 S5 Û G3 Ö • A P X ^ P r o d u c ts p e c ific a t i^ NPN 4 GHz wideband transistor BFQ34 N AriER P H I L I P S / D I S C R E T E fc.'JE » PINNING DESCRIPTION NPN transistor encapsulated in a 4 lead SOT 122A envelope with a

Contextual Info: N AMER PHILIPS/DISCRETE bb.53331 □□33117 311 • APX BLV90/SL h3E D J V U H F POWER TRANSISTOR NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors for an optimum temperature profile.

BLV95

Contextual Info: N AMER P H I L I P S / D I S C R E T E LT E D bt>S3^31 □DSTlbM 03fl A BLV95 U.H.F. POWER TRANSISTOR N.P.N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters for the 9 0 0 M H z com m unication band. Features • m ulti base structure and emitter-ballasting resistors fo r an o ptim um temperature profile

2SB1316A

Contextual Info: Is ~7 > y 7 . $ / Transistors S 2 2SB1316 X fc: B 1 3 1 6 V T \s -? Is -H fc PNP V V =>> h =7> V * 2 h>& ü) Epitaxial Planar PNP Silicon Transistor Darlington) fé J ü í& ^ íltiff l/ l- o w Freq. Power Amp. /D im ensions (Unit : mm) 1) SET'h 2) 2 . 3 - ; =

2sc4105

Abstract: 2SC4427 2SC4106 2SC4107 2SC4160 2SC4161 2SC4162 2SC4163 2SC4164 2SC4219
Contextual Info: SWITC H I N G POWER TRANSISTOR SERIES Na2 F e a t u r e s ♦ S h o r t s w i t c h i n g time ♦ High breakdown voltage ♦ Wide ASO ♦ H i g h r e l i a b i l i t y b e c a u s e of p l a n a r ¿ate H i g h — S p e e d 'I'ype U s e * Swit c h i n g regulators

Contextual Info: warn P H O 'TO T R A N S IS T O R ?*, ¡-x PHI 04 PHOTO TRANSISTOR - N E P O C SERIES — The PH 104 is a photo transistor in a plastic molded package, and PACKAGE DIMENSIONS very suitable for a detector of a photo interrupter. in millimeters inches 5.0

T2721

Abstract: BFX29 CTC 880 transistor d0422 bfx29 transistor IEC134 Silicon Epitaxial Planar Transistor philips 5BE1
Contextual Info: BFX29 T - Z.7 - Z J PHILIPS INTERNATIONAL SbE D • 711005b 0GM2EGb 5Ô7 ■ P H I N SILICON PLANAR EPITAXIAL TRANSISTOR £ PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

613 GB 123 CT

Abstract: transistor NEC D 587 Ic D 1708 ag 513 gb 173 ct MPA80 nec d 882 p transistor ic nec 2051 transistor NEC D 882 p NEC 2561 h NEC 2561 de
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA803T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD /xPA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAW INGS (U n it: m m ) FEATURES • H igh fT

em 483

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR /IPA804T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD The 2SC4571 has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAWINGS (U n it: m m ) FEATURES • H igh fT

CA3046 equivalent

Abstract: ca3046 CA3045 Harris CA3046 "an5296 Application of the CA3018" CA3046 NPN matched transistors "Application of the CA3018" 619 TRANSISTOR D430S
Contextual Info: H A RR IS S E M I C O N D S E CT OR blE D • 43 D2 27 1 CA3045, CA3046 CSÌ H A R R IS S E M I C O N D U C T O R General Purpose N-P-N Transistor Arrays March 1993 Description Features • Q O H b 'H S 37b ■ HAS Two Matched Transistors: V BE Matched ±5mV; Input

philips bfq

Abstract: BFQ263 BFQ263A RK 100
Contextual Info: Product specification Philips S em iconductors - r & 3 ~ DESCRIPTION > 5 BFQ263; BFQ263A NPN 1 GHz video transistors • 5bE D PHILIPS IN TE RNATIONAL c 711062t. 0045b4û 331 « P H I N PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with