MPA80 Search Results

DT-35-A02W-3

Abstract: DT-35-A02W EN61000-3-2 217F CISPR22 JS-2001-02 2963A
Contextual Info: MPA800R Series Industrial 800W Single Output Power Factor Corrected AC/DC Power Supplies Key Features: • 800W Output Power • Universal 90-264 VAC Input • PFC to EN61000-3-2 “D” • UL, cUL, TUV Approvals • CE Certified • FCC Class B Emissions

nec 2501 LD 932

Abstract: nec 2501 LD 229 NEC 2501 LE 240 transistor c 839 nec 2501 LD
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR juPA804T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD The 2SC4571 has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r U HF. PACKAGE DRAW INGS (U n it: m m) FEATURES 2.1 ± 0.1

CSNE381

Contextual Info: CATALOGUE LISTING 5A TO 25A MULTI - RANGE CURRENT SENSOR CSNE381 26 .0 4x2 .54 o Gì 00 LOGO, DATE CODE AND CAT. L I 8TING M A RKED ON 8 E N 8 0 R . 4 .00 ,2 0 o f\l 0 0 0 0 2 3 4 5 I in t\l hO H o f\l 10 9 8 7 6 o o p o f\i CSNE381 0/P Made in UK -0- DATE CODE

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA805T MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD PACKAGE DRAWINGS FEATU RES • Low N oise, H igh Gain • O p e ra b le at Low V o lta g e • S m all Feed-back C apacitance

613 GB 123 CT

Abstract: transistor NEC D 587 Ic D 1708 ag 513 gb 173 ct MPA80 nec d 882 p transistor ic nec 2051 transistor NEC D 882 p NEC 2561 h NEC 2561 de
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA803T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD /xPA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAW INGS (U n it: m m ) FEATURES • H igh fT

MPA80

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR juPA805T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTO R WITH BUILT-IN 2 ELEMENTS MINI MOLD FEATURES PACKAGE DRAWINGS • Low N oise, High Gain • O p e ra b le at Low V o lta g e • S m all F eed-back C apacitance

UA808

Abstract: MPA80 ic nec 1185 pin configuration LT 5238
Contextual Info: DATA SHEET SILICON TRANSISTOR UPA808T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD PACKAGE DRAWINGS FEATURES • (Unit: mm) Low Noise NF = 1.3 dB TYP. @V ce = 2 V, le = 3 mA, f = 2 GHz 2 .1± 0.1